Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH₃ molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH₃ impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.     

Femtosecond laser ablation of crystals SiO2 and YAG

Damage threshold of crystals SiO₂ and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO₂, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations.     

Tm3+/Yb3+共掺氧卤碲酸盐玻璃上转换发光研究

研究了Tm3+/Yb3+共掺氧卤碲酸盐玻璃的上转换发光光谱,分析了TmO3量对Tm3+/Yb3+共掺氧卤碲酸盐玻璃上转换发光的影响机理.结果表明:在Tm3+/Yb3+共掺氧卤碲酸盐玻璃的上转换发光中,Tm3+存在较强的浓度猝灭效应.随Tm2O3含量增加,Tm3+的上转换蓝光和红光强度先增加,后降低,在0.1 mol% Tm2O3达到最大.该结果有助于进一步提高Tm3+的上转换发光效率.     

MOSFET辐照诱生界面陷阱形成过程的1/f噪声研究

基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式.利用初始1/f噪声功率谱幅值与氧化层空穴俘获之间的联系,建立了辐照前的1/f噪声幅值与辐照诱生界面陷阱数量之间的半经验公式,并通过实验予以验证.研究结果表明,由于辐照诱生的氧化层内陷阱通过与分子氢作用而直接参与到界面陷阱的建立过程中,从而使界面陷阱生成数量正比于这种陷阱增加的数量,因此辐照前的1/f噪声功率谱幅值正比于辐照诱生的界面陷阱数量.研究结果为1/f噪声用作MOSFET辐照损伤机理研究的新工具,对其抗辐照性能进行无损评估提供了理论依据与数学模型.     

A novel scheme of label abstraction and erasion based on Fabry-Perot semiconductor optical amplifier

A novel label abstraction and erasion scheme based on a Fabry-Perot semiconductor optical amplifier (FP-SOA) is proposed for all-optical separation of the bit-serial label from payload and its performance is investigated by simulation. Important features of this scheme are that it does not make use of any high-speed electronics and only one device is needed. Using this scheme, label abstraction and erasion can be realized with the extinction ratio of 9.72 and 7.05 dB, respectively.     

A study of sound intensity control for active noise barriers

Active noise control systems have been applied to increase the insertion loss of noise barriers where the squared sound pressure or the total acoustic energy density is used as the cost function in previous works. The absolute value of the mean active sound intensity is chosen as the cost function to obtain extra sound insertion loss in the dark area of a hybrid active noise barrier system in this note. The strategy of minimizing the near-field sound intensity at discrete locations along the edge of the passive barrier is shown to be able to provide better far-field noise reduction than that of minimizing the squared sound pressure control. Both numerical simulations and off-line experiments are carried out with a three-channel demonstration system, where the locations of the secondary sources and the error sensors are optimized and comparisons are made between the extra sound pressure attenuation of the sound intensity control and that of the squared sound pressure control.     

Synthesis and luminescent properties of nanoparticles GdCaAl3O7:RE (RE=Eu, Tb) via the sol-gel method

By using metal nitrates as starting materials and citric acid as complexing agent, GdCaAl₃O₇:Eu³⁺ and GdCaAl₃O₇:Tb³⁺ powder phosphors were prepared by a citrate-gel method. Thermal analysis (TG-DTG), X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM), photoluminescence excitation and emission, as well as kinetic decays were employed to characterize the resulting samples. The results of the XRD indicated the precursor samples began to crystallize at 800 °C and the crystallinity increased with elevation the annealing temperature. TEM images showed that the phosphor particles were basically of spherical shape, with good dispersion about a particle size of around 40-70 nm. Upon excitation with UV irradiation, it is shown that there is a strong emission at around 617 nm corresponding to the forced electric dipole ⁵D₀-⁷F₂ transition of Eu³⁺, and at around 543 nm corresponding to the ⁵D₄-⁷F₅ transition of Tb³⁺. The dependence of photoluminescence intensity on Eu³⁺ (or Tb³⁺) concentration and annealing temperature were also studied in detail.     

Ku波段卫星移动通信的关键技术分析

移动卫星通信是现代卫星通信是现代卫星通信的一个重要发展方向，随着卫星通信向高频段（Ku波段、Ka波段）发展，移动卫星通信也必然要走向更高频段，本文就Ku频段移动卫星通信的几个关键技术问题进行了阐述。     

高栅压下超薄栅nMOSFET的RTS噪声

在深入研究SMIC 90nm工艺1.4nm栅厚度nMOS器件RTS噪声时域特性的基础上,提出了该类噪声电子隧穿栅介质的物理起源,并对高栅压下RTS噪声机理作了深入阐述.结合IMEC和TSMC的研究,建立了栅压与RTS噪声时间参数的物理模型,实验结果和模型模拟结果的一致说明了模型的有效性.该研究为边界陷阱动力学和此类器件可靠性提供了新的研究手段.     

三元混晶膜的表面声子极化激元

采用改进的无规元素孤立位移模型和波恩-黄近似,运用电磁场的麦克斯韦方程和边界条件,研究极性三元混晶膜中的表面声子极化激元.以AlxGa1-xAs,ZnxCd1-xS 和GaxIn1-xN 膜为例,获得了其中表面声子极化激元的频率作为波矢和膜厚之函数的数值结果并进行了讨论.结果表明:在三元混晶膜中有四支表面声子极化激元,不同材料的色散曲线分别显示了混晶电磁声子模的"双模"和"单模"特征.