Characteristics and uniformity of group V implanted and annealed HgCdTe heterostructure

This work presents characterization of implanted and annealed double layer planar heterostructure HgCdTe for p-on-n photovoltaic devices. Our observation is that compositional redistribution in the structure during implantation/ annealing process differs from that expected from classical composition gradient driven interdiffusion and impacts the placement of the electrical junction with respect to the metallurgical heterointerface, which in turn affects quantum efficiency and R_oA. The observed anomalous interdiffusion results in much wider cap layers with reduced composition difference between base and cap layer composition. The compositional redistribution can, however, be controlled by varying the material structure parameters and the implant/anneal conditions. Examples are presented for dose and implanted species variation. A model is proposed based on the fast diffusion in the irradiation induced damage region of the ion implantation. In addition, we demonstrate spatial uniformity obtained on molecular beam epitaxy (MBE) material of the compositional and implanted species profile. This reflects spatial uniformity of the ion implantation/annealing Processes and of the MBE material characteristics.     

Shastra: multimedia collaborative design environment

A distributed environment that supports multimedia interfaces, Shastra strengthens collaboration in scientific and engineering design. Implemented on a desktop system, it provides an infrastructure for user- and application-level cooperation. We describe the Shastra architecture and tools, then walk through a scenario that shows how it enhances collaborative problem solving     

On the correlation between the magnetic structure and the electrical properties of EuB6

Single crystals of EuB₆ were prepared by the floating-zone method. Magnetic and electric measurements on these crystals in the temperature range 1.6–300 K revealed that the pure EuB₆ is an antiferromagnet with a Néel temperature of 5–6 K and has a carrier concentration of 4.2 × 10²⁰ cm^-3. It was found that in polycrystalline sample, defects of Eu ions reduce the carrier concentration and make the sample ferromagnetic. It is suggested that the conduction electrons in pure EuB₆ originate from the overlap of the 4f band tail and the conduction band.     

Effect of free carrier screening on the binding energy of D− centers in polar semiconductors

A calculation of the binding energy of a D^? center, defined as the energy required to remove one of the two electrons from the D^? center to infinity, in the presence of other free carriers is reported in polar crystals. It is assumed that the effective interaction between each of the two electrons and the positive ion is described by Thomas-Fermi potential. The effective interaction between the two electrons in polar crystals is, however, described by two recently proposed potentials. The binding energy of a D^? ion is calculated variationally in several polar crystals as a function of the screening parameter δ and the value of δ at which the binding energy goes to zero (D^? Mott transition) is determined. A possible experimental situations where this system may be studied is discussed.     

Decays of the mesons and the singlet photon

In an attempt to explain the recent measurements on the radiative decays of the vector-mesons (V→Pγ), we study the consequences of introducing a small admixture of SU (3) singlet piece in the electromagnetic current. We find that this leads to an excellent fit of the theory with the new measurements on theV→Pγ decays. However, this addition adversely affects the fit of the leptonic decays of the vector mesons (V→e ⁺ e ⁻) and of the radiative decay of the pion (π→2γ). We conclude that the overall fit to the available data does not favour a large (>10%) admixture of the SU(3) singlet. The decay rates have been calculated in the vectormeson dominance model. At the hadronic vertex (VVP), we assume asymptotic nonet symmetry. The electromagnetic couplings (V−γ) are the ones appropriate to vector-mixing.     

The algebraic degree of geometric optimization problems

In this paper we apply Galois methods to certain fundamentalgeometric optimization problems whose exact computational complexity has been an open problem for a long time. In particular we show that the classic Weber problem, along with theline-restricted Weber problem and itsthree-dimensional version are in general not solvable by radicals over the field of rationals. One direct consequence of these results is that for these geometric optimization problems there existsno exact algorithm under models of computation where the root of an algebraic equation is obtained using arithmetic operations and the extraction ofkth roots. This leaves only numerical or symbolic approximations to the solutions, where the complexity of the approximations is shown to be primarily a function of the algebraic degree of the optimum solution point.     

Binding energies of excitons in ionic quantum well structures

Il Nuovo Cimento D - We have calculated the binding energies of excitons in quantum well structures based on ionic semiconductors by including the electron-hole interactions with the...     

The electroweak mixing angle in unified gauge theories—the renormalisation effects

A general analysis of the renormalisation corrections to the unification results for the coupling constants of strong and electroweak interactions is attempted. In particular, the effects of introducing an energy scale intermediate between the unification energy and the low-energy regions are studied and found to be important. This analysis is applied to unification schemes of both kinds, namely, unification at superhigh energies, and unification at accessible energies.     

Microestimation of explosives present in different compositions

Summary High explosives having the sameR _f values on a thin-layer chromatogram and difficult to separate are readily resolved as their coloured -complexes with aromatic amines. After liberation from their complexes on the plate, up to 1.5 g of the explosives can be conveniently estimated at their characteristic absorption maxima.

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Zusammenfassung Hochexplosive Substanzen mit gleichenR _f -Werten auf Dünnschichtchromatogrammen, die sich schlecht trennen lassen, werden als gefärbte -Komplexe mit aromatischen Aminen gut voneinander getrennt. Nach Freisetzung aus den Komplexen auf der Platte können bis zu 1,5 g der Explosivstoffe bei ihrem charakteristischen Absorptionsmaximum auf übliche Weise bestimmt werden.

     

Sharp line emission spectra from GaAs FET like structures

Magneto-optical analysis of prominent photoluminescence lines from GaAs FET structures has been performed. Fifteen samples were investigated. Each consisted of a sulfur doped active layer on a high resistivity buffer layer (both epitaxially grown films) on a chromium doped GaAs substrate. The active layers were generally 2μm thick or less, except for two thicker layers (4 and 5μm) grown especially for this study. Buffer layer thicknesses ranged from 1.5 to 26μm. A model based on carrier diffusion through the active layer has been used to interpret the spectra as originating from the active-buffer interface region. All spectra contain strong-evidence of two donorbound exciton complexes associated with sulfur (1.51417eV) and silicon (1.51412eV). Other sharp spectral features included up to six lines associated with more complicated complexes. Linear Zeeman and quadratic diamagnetic behavior of the lines in applied magnetic fields are discussed. Supported under AF Contract F33615-77-C-5003 Supported under AF Contract F33615-76-C-1207