Resource assignment for integrated services in wireless ATM networks

The task of supporting integrated multirate multimedia traffic in a bandwidth-poor wireless environment poses a significant challenge for network designers. In this paper we propose a novel bandwidth allocation strategy which partitions the available bandwidth amongst the different traffic classes in a manner that ensures quality-of-service guarantees for digital video while minimizing the maximum blocking probability for voice and data connections. At the connection level, near-optimum utilization of the reserved bandwidth for video traffic is achieved through an intra-frame statistical multiplexing algorithm, while at the system level the delicate task of partitioning the bandwidth between voice, video and data is accomplished by developing an efficient algorithm which uses traffic parameters consisting only of the aggregate traffic load and the total available bandwidth. The algorithm, built on non-trivial mathematical results is robust, easy to implement and has a geometric rate of convergence which ensures that the partitioning points are found quickly. These properties make it well suited for practical implementations, even for cases where changes in the aggregate traffic loads cause bandwidth allocations to be recomputed frequently. © 1998 John Wiley & Sons, Ltd.     

Doubly strainedIn0.41Al0.59As/n+-In0.65Ga0.35As HFET with high breakdown voltage

An In_0.41Al_0.59As/n⁺-In_0.65 Ga_0.35As HFET on InP was designed and fabricated, using the following methodology to enhance device breakdown: a quantum-well channel to introduce electron quantization and increase the effective channel bandgap, a strained In_0.41Al_0.59As insulator, and the elimination of parasitic mesa-sidewall gate leakage. The In_0.65Ga_0.35As channel is optimally doped to N_D=6×10¹⁸ cm^-3. The resulting device (L_g=1.9 μm, W_g =200 μm) has f_t=14.9 GHz, f_max in the range of 85 to 101 GHz, MSG=17.6 dB at 12 GHz V_B=12.8 V, and I_D(max)=302 mA/mm. This structure offers the promise of high-voltage applications at high frequencies on InP     

Simulation of mode-locked surface-emitting lasers through a finite-difference time-domain algorithm

An approach based on the finite-difference time-domain method is developed for simulating the dynamics of passive mode locking in vertical-cavity surface-emitting lasers (VCSELs). The material response is modeled by the effective semiconductor Bloch equations through a resonant polarization term in the Maxwell's equations. Nonlinear gain saturation is incorporated through a gain compression factor in the equation governing the dynamics of the resonant polarization. An extended-cavity VCSEL with a quantum-well saturable absorber is simulated, and stable mode-locking pulses are obtained. Fine features of the spatial profile of the mode-locked pulses are also studied within this approach.     

Vibrational analysis of polyethylene terephthalate and its deuterated derivatives

The Vibrational analysis of polyethylene terephthalate, polyethylene-d₄ terephthalate, and polyethylene terephthalate-d₄ has been carried out using a valence force field calculated from the infrared and Raman spectra of a series of low molecular weight aromatic esters. The Raman spectra for polyethylene-d₄ terephthalate and polyethylene terephthalate-d₄ are presented and band assignments for these compounds and polyethylene terephthalate are discussed.