The connection of the nuclear “Coriolis” force with classical mechanics

The relation between the socalled Coriolis couplingI · j, operating in rotating nuclei, and the classical Coriolis force is discussed. The system forces acting in the cranking model for non-uniform rotation and in the rotator-particle model are examined. Differences with the molecular Coriolis coupling are indicated.     

Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518

Ga _x In_1–x As _y P_1–y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga _x In_1–x As _y P_1–y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2 InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3m wide and 100m spaced rib waveguides exhibit losses below 0.8dBcm^–1.     

Mobility of modulation doped AlGaAs/low-temperature MBE-grown GaAs heterostructures

A study of the mobility of a novel modulation doped heterostructure in which the channel region is made of low-temperature molecular beam epitaxially grown GaAs (LT-GaAs) and all other layers are grown at normal temperatures is presented for the first time. The resistivity of the as-grown samples(in- situ annealed) is very high, as is that of single layers of bulk LT-GaAs. However, in the presence of light, the resistivity of the LT-GaAs modulation-doped field effect transistor (MODFET) is significantly lower, facilitating reliable Hall measurements. We speculate that the observed decrease in resistivity of the LT-GaAs MODFET is due to the formation of a two-dimensional electron gas (2DEG) at the heterointerface under illumination. A number of samples grown under different growth conditions were investigated. Mobilities for these samples were found to be in the range of 250 to 750 cm²Vs at 300K and ∼3000 to 5500 cm²Vs at 77K. A first-order computer simulation was implemented to calculate the mobility of the 2DEG using the relaxation-time approximation to solve the Boltzmann equation, taking into account different scattering mechanisms. Scattering by the arsenic clusters and by ionized impurities in the LT-GaAs MODFET channel are found to be the two dominant mechanisms limiting the mobility of the LT-GaAs MODFET samples. Experimental values are in good agreement with theoretical results.     

Metal particles on surfaces-desorption,optical spectra,and laser-induced size manipulation

Desorption induced by electronic excitation with laser light is discussed. Emphasis is placed on nonthermal desorption where surface plasma excitation in small particles precedes the rupture of the surface chemical bond. A scenario for the mechanism underlying such a process is proposed. In this context, calculations of the electronic spectra of small sodium particles are presented and the influence of different multipole orders of the collective electron oscillation, of different shapes of the clusters and of the substrate are outlined. Furthermore, manipulation of the size distribution of metal particles on supports is described as an application of the effect. This allows the preparation of very special surfaces with novel physical and chemical properties. Methods to characterize such adsorbate-substrate combinations, especially by use of the optical spectra of the particles, are also discussed. Finally, prospects for future experiments in this field are outlined.     

Gleichgewichtsmessung mit der Transportmethode. Bestimmung der Bildungsenthalpie ΔH°(NbOCl2,f) durch chemischen Transport im Diffusionsrohr

Equilibrium Measurements by the Transport Method. Determination of the Enthalpie of Formation ΔH°(NbOCl_2,f) by Chemical Transport in the Diffusion Tube By means of chemical transport in an ampoule with a well defined diffusion path the equilibrium NbOCl_2,s + NbCl_5,g ? NbOCl_3,g + NbCl_4,g has been investigated. Introducing a reaction entropy ΔS = 45 cl one gets ΔH = 38(±2) kcal/formula weight and ΔH⁰(NbOCl_2,s)= ?187,6 kcal/mol.     

Bulk and localized oxygen concentration measurements of steam-oxidized zircaloy-4 using nuclear analysis techniques

Quantitative measurement of both bulk and localized oxygen concentrations is of importance in the study of oxidation kinetics. We describe the combined application of two nuclear techniques, fast neutron activation analysis and (d, p) nuclear microprobe, to the determination of oxygen concentrations and surface profiles for steam-oxidized Zircaloy-4 cladding specimens. Results of measurements using these techniques are presented. Work partially supported by Electric Power Research Institute Contract T.S.A. No. 20.     

Schlüsselreaktionen einer synthese des sibirosamins

[2,3]-Sigmatropic rearrangement and vic. $\text{cis}$-oxyamination of 3-$\text{C}$-methyl-ald-m-enopyranosides are the key steps for the synthesis of a sibirosamine precursor.