Stability of Semiconductor States with Insulating and Contact Boundary Conditions

We prove the existence of global smooth solutions near a given steady state of the hydrodynamic model of the semiconductors in a bounded domain with physical boundary conditions. The steady state and the doping profile are permitted to be of large variation but the initial velocity must be small. Two cases are considered. In the first one the problem is three-dimensional, the boundary conditions are insulating and the steady state velocity vanishes. In the second one, the problem is one-dimensional, the boundary is of contact type and the steady state velocity does not vanish.     

电路过渡过程的计算机辅助分析

电路过渡过程所列方程是微分方程，本文中采用的是方框图模型分析法，即将微分方程的复杂示解分解成最基本的加（减）、乘（除）、积分（微分）、增益等运算，采用VB设计用户界面产进行计算，并给出了一算例。     

Economic cost modeling of environmental-stress-screening andburn-in

The electronics industry is highly competitive. The introduction of new advanced integrated circuits continues. The manufacturer must develop a product with adequate life cycle, high quality and low failure rate in the specified time period. Environmental stress screening (ESS) is widely used in the electronics industry to assist in eliminating early or patent failures. The bathtub curve is a common model for the failure rate of a population. The classic bathtub curve has three parts: infant mortality; useful life; and wearout. However, some electronic products have latent defects which are not detected by conventional inspection or functional testing, and occur during the product useful life. Most electronic systems have finite useful life. As a result, technology obsolescence is of concern and should be considered, This paper uses a new interpretation and development of the bathtub curve that integrates: (1) latent failures; and (2) the concept of obsolescence, by constructing an integrated cost model used to determine both optimal burn-in and ESS times in the same environment     

Optic Fiber Interferometer for Absolute Distance Measurement

1.IntroductionAbsolutedistancemeasurementisfarfromanewtopic.However,itisstillafieldstimulatinggreatinterestsnowadaysduetoitSimportantroleinmanufacturingandassembly['J.SincethegreatsuccessachievedbyMichelsonandBenoitwhentheyfirstdevelopedaninterferometertodeterminethestandardmeterintermsofthemonochromaticredcadmiumline,theopticinterferometerhasbeenprovedtobeoneofthemostpreciseandefficientwayindisplacementmeasurementbecauseofitshighdiscriminationandsimplestructure.However,thetraditionalinterfe…     

应用粒子动态分析仪研究水力旋流器流场

利用粒子动态分析仪(PDA),对水力旋流器内固相颗粒流场做了全面的测定,得出水力旋流器内固相颗粒的流态、浓度及粒度分布,为进一步查清水力旋流器的工作机理提供了重要理论依据。     

用于提高国产氩离子激光器相干长度的相干扩展器

本文报导了最近研制成功的用于提高国产氩离子激光器相干长度的相干扩展器。利用这种基于F-P理论的相干扩展器可以使国产氩离子激光器的相干长度由不足5cm一下提高到m的量级,功率损耗在25%～40%之间,有着很好的应用前景。     

Ag+掺杂的立方相Y2O3:Eu纳米晶体粉末发光强度研究

采用化学自燃烧法制备了不同Ag⁺掺杂浓度的Y₂O₃:Eu纳米晶体粉末样品(［Y³⁺］∶［Eu³⁺］∶［Ag⁺］=99∶1∶X，X=0—3.5×10^-2)，以及通过退火处理得到了相应的体材料.根据X射线衍射谱确定所得纳米和体材料样品均为纯立方相.实验表明在纳米尺寸样品中随着Ag离子浓度的增加，荧光发射强度随之增加，当X=2×10^-2时达到最大值，其发光强度比X=0时提高了近50%.当Ag离子浓度继续增加，样品发光强度保持不变.在相应的体材料样品中则没有观察到此现象.通过对各样品的发射光谱，激发光谱，X射线衍射图谱，透射电镜(TEM)照片和荧光衰减曲线的研究，分析了引起纳米样品荧光强度变化的原因是由于Ag离子与表面悬键氧结合，从而使这一无辐射通道阻断，使发光中心Eu³⁺的量子效率提高；Ag⁺的引入所带来的另一个效应是使激发更为有效.这两方面原因使发光效率得到了提高.     

铁分子Fe2的自旋极化效应

采用密度泛函方法(B3P86)对 Fe_2分子结构进行了优化.计算结果中未观察到自旋污染,基态波函数与高态波函数并未混杂,结果表明,Fe_2中有8个未配对电子,这些电子空间分布不同和自旋平行产生的自旋极化效应,使 Fe_2能量最低.计算结果表明,Fe_2分子的基态是~9∑_g~ ,并非~7Δ_u,进而表明 Fe_2的自旋平行效应比电子自旋配对效应要强.计算得到该分子基态的二阶、三阶和四阶力常数分别为1.4115×10~(-2)aJ/nm~2、-37.1751×10~3aJ/nm~3和 98.7596×10~4aJ/nm~4；光谱数据ω_eχ_e、B_e、α_e分别为0.3522、0.0345、 0.4963×10~(-4)cm~(-1)；离解能为3.5522eV,平衡键长为0.2137nm,振动频率为292.914cm~(-1)；并得到了 Murrel-Sorbie 函数.     

匀速运动的电偶极子的电场和磁场分布

本文通过对电偶极子电磁势的分析和相对论下电磁场在不同惯性系中的协变分布，计算了作匀速直线运动的电偶极子的电场和磁场的空间分布．