A push mechanism for GPRS supporting private IP addresses

The General Packet Radio Service (GPRS) provides a packet switched data service for mobile users. However, the existing GPRS specification does not provide the push mechanism and it is difficult to support GPRS services such as call termination (incoming call) for wireless voice over IP (VoIP). Based on the short message service, this paper proposes a push mechanism for GPRS supporting private IP addresses. Our approach does not need to modify the existing GPRS structure.     

Enhancement of underfill capillary flow in flip-chip packaging by means of the inertia effect

This paper describes how the use of inertia forces induced by the rotation of a working disk may be adopted to increase the fill rate of the flip-chip packaging process and thereby reduce the process cycle time. It is shown how the driving forces resulting from the inertia effect are determined by the Weber number. The constant and varying contact angle models are compared under a specified set of process conditions. The calculated flow behavior results indicate that the relationship between the contact angle, the average fluid velocity, the liquid-air interface position, and the filling time depends upon the Weber number. The constant and varying contact angle models are utilized in the analysis of a new processing method referred to as rotation-enhanced underfill packaging (REUP). The inertia effect induced by the angular motion of the working disk is shown to enhance the flow of the underfill encapsulant and to reduce the time of the underfill process. The present results confirm that the rotation of the working disk leads to an increased underfill capillary flow rate, which is beneficial in reducing the production cycle time of the flip-chip packaging process.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)     

Gauged harmonic maps,Born‐Infeld electromagnetism,and magnetic vortices

We study maps from a 2‐surface into the standard 2‐sphere coupled with Born‐Infeld geometric electromagnetism through an Abelian gauge field. Such a formalism extends the classical harmonic map model, known as the σ‐model, governing the spin vector orientation in a ferromagnet allows us to obtain the coexistence of vortices and antivortices characterized by opposite, self‐excited, magnetic flux lines. We show that the Born‐Infeld free parameter may be used to achieve arbitrarily high local concentration of magnetic flux lines that the total minimum energy is an additive function of these quantized flux lines realized as the numbers of vortices antivortices. In the case where the underlying surface, or the domain, is compact, we obtain a necessary sufficient condition for the existence of a unique solution representing a prescribed distribution of vortices antivortices. In the case where the domain is the full plane, we prove the existence of a unique solution representing an arbitrary distribution of vortices and antivortices. Furthermore, we also consider the Einstein gravitation induced by these vortices, known as cosmic strings, establish the existence of a solution representing a prescribed distribution of cosmic strings cosmic antistrings under a necessary sufficient condition that makes the underlying surface a complete surface with respect to the induced gravitational metric. © 2003 Wiley Periodicals, Inc.     

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers.     

PURE STATE APPROACH TO $C(X)×_\alpha Z_n$

ＰＵＲＥ ＳＴＡＴＥ ＡＰＰＲＯＡＣＨ ＴＯ Ｃ（ｘ）_αＺ_nＬＩＢＩＮＧＲＥＮ；ＬＩＮＱＩＮＧ（ＩｎｓｔｉｔｕｔｅｏｆＭａｔｈｅｍａｔｉｃｓ，ＡｃａｄｅｍｉａＳｉｎｉｃａ，Ｂｅｉｊｉｎｇ１０００８０，Ｃｈｉｎａ．Ｐｒｏｊｅｃｔｓｕｐｐｏｒｔｅｄｂｙｔｈ?..     

An electrooptic intensity modulator with improved linearity

A highly linear electrooptic modulator has been designed, fabricated, and evaluated. The design of this modulator consists of only a simple modification to the directional coupler. Two-tone testing has demonstrated that, for an optical modulation depth of 30% per channel, the third-order intermodulation distortion is more than 30 dB lower than that of the conventional directional coupler or Mach-Zehnder modulators. This improvement was not observed to be accompanied by any increase in second harmonic distortion. Also included are results of two-tone computer simulations which predict the improvement in linearity of this device for a range of modulation depths.<>