Electromigration-induced damage in bamboo Al interconnects

Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void and the hillock reached the critical length for electromigration at the given current density. A modified equation for the drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform depletion are more reliable than those with uniform depletion.     

Alloying by high dose ion implantation of iron into magnesium and aluminium

Alloys of the systems Fe–Al (mixable over the whole concentration range) and Fe–Mg (insoluble with each other) were produced by implantation of Fe ions into Al and Mg, respectively. The implantation energy was 200 keV and the ion doses ranged from 1 × 10₁₄ to 9 × 10₁₇cm^-2The obtained implantation profiles were determined by Auger electron spectroscopy depth profiling. Maximum iron concentrations reached were up to 60 at.% for implantation into Al and 94 at.% for implantation into Mg. Phase analysis of the implanted layers was performed by conversion electron Mössbauer spectroscopy and X‐ray diffraction. For implantation into Mg, two different kinds of Mössbauer spectra were obtained: at low doses paramagnetic doublets indicating at least two different iron sites and at high doses a dominant ferromagnetic six‐line‐pattern with a small paramagnetic fraction. The X‐ray diffraction pattern concluded that in the latter case a dilated αiron lattice is formed. For implantation into Al, the Mössbauer spectra were doublet structures very similar to those obtained at amorphous Fe–Al alloys produced by rapid quenching methods. They also indicated at least two different main iron environments. For the highest implanted sample a ferromagnetic six‐line‐pattern with magnetic field values close to those of Fe₃Al appeared.     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Brennstoffzellen

For two applications of fuel cells (SOFC and IMFC) system configurations and energy balances are presented. A decentralized combined heat and power plant on SOFC basis can be designed as a flexible system with high efficiency. A drive system with methanol reformer and fuel cell (IMFC) in comparison with a natural gas combustion engine has lower energy comsumption and much lower emissions.     

Wavelength selection for low-saturation pulse oximetry

Conventional pulse oximeters are accurate at high oxygen saturation under a variety of physiological conditions but show worsening accuracy at lower saturation (below 70%). Numerical modeling suggests that sensors fabricated with 735 and 890 nm emitters should read more accurately at low saturation under a variety of conditions than sensors made with conventionally used 660 and 900 nm band emitters. Recent animal testing confirms this expectation. It is postulated that the most repeatable and stable accuracy of the pulse oximeter occurs when the fractional change in photon path lengths due to perturbations in the tissue (relative to the conditions present during system calibration) is equivalent at the two wavelengths. Additionally, the penetration depth (and/or breadth) of the probing light needs to be well matched at the two wavelengths in order to minimize the effects of tissue heterogeneity. At high saturation these conditions are optimally met with 660 and 900 nm band emitters, while at low saturation 735 and 890 nm provide better performance     

Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

The concentration and chemical state of copper in the subsurface region of Cu/SiO₂ composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO₂) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO₂ matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.     

Formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation

The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)