Circular core polarization-maintaining optical fibers withelliptical stress-induced cladding

The reproducible technology for producing high-birefringence fibers with stress-induced elliptical cladding and circular core is described. The authors have obtained fibers that have a birefringence of about (1-3) 10^-4, a mode coupling parameter of about (2-7) 10 ^-5 m^-1, and loss of less than 0.5 dB/km at 1.6 μm. The authors have found effects restricting the capability of test fibers to maintain the state of linear polarization     

Ultrashort pulse laser osteotomy

Laser treatment of bone tissue has already been the subject of many studies to find substitutes for mechanical instruments that are nowadays used in implantology and orthopaedics. Mainly lasers with pulse durations in the μs region have been tested leaving surface features that are not always satisfactory. Therefore, in the present study laser osteotomy has been performed with a 330 fs Yb:glass laser, λ = 1040 nm, at a pulse repetition rate of 1 kHz. For bovine spongiosa, compacta, and cartilage, the ablation thresholds as well as the ablation rates for various pulse energies have been determined. Additionally, quadratic areas have been ablated in bone tissue. The remaining morphology has been analyzed via scanning electron microscopy. Laser ablation has also been performed with an Er, Cr:YSGG laser, λ = 2780 nm, PRR = 20 Hz, τ ～ 50 μs. The results of USPL and Erbium laser ablation are compared.     

Diffusion,solubility, and electrical properties of scandium and praseodymium in silicon

An integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon annealed in various media and temperature ranges (1100–1280 °C) was performed for the first time. The tracer technique, autoradiography, measurements of isothermic capacity and current relaxation, conductivity, and the Hall effect were used for the investigations. The diffusion parameters, solubility, and an acceptor character of scandium and praseodymium impurities in silicon were determined. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 75–77, January, 2007.     

Vortex ring generation due to the coalescence of a water drop at a free surface

 Results are presented of an experimental investigation of vortex ring formation by a fluid drop contacting a free surface with negligible velocity. The pool fluid is mixed with fluorescein dye, and a laser sheet is used to illuminate a plane of the flow. A series of representative images is recorded by a CCD camera and speculation is made regarding specific sources of vorticity flux through the free surface. Two scaling analyses previously presented by other investigators are demonstrated to be equivalent under the assumptions of this experiment, and they provide the motivation for a series of test runs in which the duration of the coalescence process, τ_*, is related to variations in drop diameter L and fluid surface tension σ. Experimental results are in agreement with the analyses, showing τ_*∼σ^-1/2 and τ_*∼L ^3/2. Received: 22 December 1995 / Accepted: 15 October 1996     

On the dispersion of a solute in oscillating flow of a non-Newtonian fluid in a channel

The paper presents an exact analysis of the dispersion of an immiscible solute in a non-Newtonian fluid (known as an incompressible second-order fluid which shows viscoelastic behaviour) flowing slowly in a parallel plate channel in the presence of a periodic pressure gradient. Using a generalized dispersion model which is valid for all times after the solute injection, the diffusion coefficients K _i (τ)(i=1,2,3,…) are obtained as functions of time τ in the case when the initial solute distribution is in the form of a slug of finite extent. The analysis leads to the novel result that K ₂(τ) (which is a measure of the longitudinal dispersion coefficient of the solute) has a steady part S in addition to a fluctuating part D ₂(τ) due to the pulsatility of the flow. It is found that S decreases with increase in the viscoelastic parameter M for given values of the amplitude λ and frequency ω of the pressure pulsation. On the other hand, it is found that at a fixed instant τ, the amplitude of D ₂(τ) increases with increase in M for given values of λ and ω. Further it is shown that at a given instant τ, the amplitude of D ₂(τ) decreases with increase in ω for given λ and M and the profile for D ₂(τ) becomes progressively flatter with increase in ω. Finally the axial distribution of the average concentration θ _m of the solute over the channel cross-section is determined at different instants after the solute injection for several values of M, λ and ω. The present study is likely to have important bearing on the problem of dispersion of tracers in blood flow through arteries.     

On the embedding problem with noncommutative kernel of order p4. VI

In the case of number fields the embedding problem of a p-extension with non-Abelian kernel of order p⁴ is studied. The two kernels of order 3⁴ with generators α, γ and relations α⁹ = 1, [α,α]³=1,[α,αγγ]==1,[αγγ]=α³,γ³=1 or γ³=α³ and the kernel of order 2⁴ with generators α, β, γ and relations α⁴=1 β²,[αγ]=1, [α,γ]=1,[βγ]=α² are considered. For kernels of odd order the embedding problem is always solvable. For the kernel of order 16 the solvability conditions are reduced to those for the associated problems at the Archimedean points, and to the compatibility condition. Bibliography: 9 titles. Translated fromZapiski Nauchnykh Seminarov POMI, Vol. 227, 1995, pp. 74–82.     

Analysis of US semiconductor collaboration

Consortia in the United States and the US National Science Foundation's Engineering Research Centers, which have often emphasized long-range research with considerably less focus on current problems than have consortia in Japan, are reviewed. It is suggested that, in most instances, these US institutions have searched for revolutionary technology advancements and have had difficulty transferring their work to their members. While this type of work supports the development of new technology, it does little to solve current competitiveness problems. Only Semiconductor Manufacturing Technology, Inc. (SEMATECH) has assisted its members with continuous improvements, compressing product cycles, establishing relationships with suppliers, and strengthening core competencies while emphasizing work leading to process and produce improvements. SEMATECH's success shows that government can use SEMATECH as a model for the creation of programs where US industry lags behind foreign competitors