Experimental investigation and numerical simulation of the influence of resonator-length detuning on the output power,pulse duration and spectral width of a cw mode-locked picosecond optical parametric oscillator

We report on a cw mode-locked non-critically phase matched KTP optical parametric oscillator synchronously pumped by a picosecond Ti:Sapphire laser. High average signal output power of up to 950 mW over a large tuning range has been achieved. For this OPO the influence of resonator-length detuning on the output power, pulse duration and spectral bandwidth has been investigated. The measured data are in good agreement with the results of a numerical simulation using a split-step Fourier method which considers the group-velocity mismatch, the group-velocity dispersion and the self-phase modulation. The numerical simulation also describes the measured strong pump depletion and its influence on the OPO output and efficiency.     

Three-dimensional CMOS NAND with three stacked channels

A process-inherent NAND2 device is presented for a three-dimensional CMOS integration with epitaxial lateral overgrowth and chemo-mechanical polishing. The required 'OR' function of the two PMOS transistors is achieved by one silicon volume, which is controlled by a back gate and a conventional front gate. Almost symmetrical characteristics are measured for the front and the back gates.<>     

SAR-retrieved wind in polar regions-comparison with in situ data and atmospheric model output

European remote sensing (ERS) satellites synthetic aperture radar (SAR) wind retrievals using CMOD-IFR2 are, for the first time, retrieved in the marginal ice zone (MIZ) and in Arctic coastal areas and compared with in situ observations from reseach vessels (RVs) and output from a high-resolution atmospheric model. The root mean squares (rms) of the comparisons were 1.6 m s/sup -1/ and 2 m s/sup -1/, respectively. The spatial variation of the SAR wind fields established a decrease in wind speed close to the ice edge for the late summer situations where the wind was along the ice edge with the ice to the left. This decrease is believed to be due to changes in atmospheric stability, possibly through development of an internal boundary layer caused by the cold ice cover and melt water. Lower wind speed near the ice edge is confirmed by the atmospheric model and the in situ observations. Furthermore, good results are obtained from SAR wind retrieval in leads when compared with model output during a cold-air outbreak. Routine measurements in the MIZ are useful for estimating the wind stress, and therefore SAR may play an important role in this region. Finally, the identification of a jet out from Hinlopen Strait in the Svalbard region and low wind wakes along the coast in the SAR-retrieved wind field is confirmed by in situ observations as the RV moves through the region. The jet is also confirmed by the atmospheric model, which is able to reproduce the situation.     

Evaluation of a compound probability model with tower-mountedscatterometer data

Six months of data from the YSCAT94 experiment conducted at the CCIW WAVES research platform on Lake Ontario, Canada, are analyzed to evaluate a compound probability model. YSCAT was an ultrawideband small footprint (≈1 m) microwave scatterometer that operated at frequencies of 2-18 GHz, incidence angles from 0° to 60°, both h-pol and v-pol, and which tracked the wind using simultaneous weather measurements. The probability distribution function of the measured instantaneous backscattered amplitude (p(a)) is compared to theoretical distributions developed from-the composite model and a simple wave spectrum. Model parameters of the resulting Rayleigh/generalized lognormal distribution probability density function (pdf) (C, a₁ , and a₂) are derived directly from the data and are found to demonstrate relationships with wind speed, incidence angle, and radar frequency     

Electromigration-induced damage in bamboo Al interconnects

Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void and the hillock reached the critical length for electromigration at the given current density. A modified equation for the drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform depletion are more reliable than those with uniform depletion.     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation

The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)     

High quantum efficiency of intersubband transitions in coherent tunneling of electrons through asymmetric double-barrier structures

A converging perturbation series that can be summed analytically has been obtained for intersubband transitions of electrons coherently tunneling through the middle of a dimensionally quantized level in an asymmetric double-barrier structure in a high-frequency terahertz electric field. The possibility of a substantial increase in tunneling current accompanied by either absorption or emission of a photon has been demonstrated. The quantum efficiency of radiative transitions between dimensionally quantized levels can be up to 66%. Zh. éksp. Teor. Fiz. 112, 237–245 (July 1997)     

A biased percolation model for the analysis of electronic-device degradation

The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the film resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments.     

Investigation of the conditions for feeding filamentary silicon crystals,growing in a reactor with hot walls

An estimate of the factors which influence the rate of growth of filamentary silicon crystals in a standard chloride system using a quartz reactor with hot walls is given. It is shown that a diffusion form of crystallization is observed under the conditions investigated.Voronezh State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 22–26, October, 1995.