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91.
B. I. Sokil 《Ukrainian Mathematical Journal》1997,49(11):1777-1781
On the basis of periodic Ateb functions, in the resonance and nonresonance cases, we construct the asymptotic approximation of one-frequency solutions of a boundary-value problem for a nonlinear nonautonomous equation. 相似文献
92.
Bartolo A. Clymer B.D. Burgess R.C. Turnbull J.P. 《Signal Processing, IEEE Transactions on》1998,46(8):2243-2248
A new method of implementing efficient FIR filters is presented. It involves approximation of an equiripple FIR by a rounding operation and application of the derived impulse response by a simple recursive equation. The technique is extremely efficient for lowpass, highpass, bandpass, and bandstop filters with sharp transitions and low edge frequencies 相似文献
93.
Candelier P. Mondon F. Guillaumot B. Reimbold G. Martin F. 《Electron Device Letters, IEEE》1997,18(7):306-308
A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O2 anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs 相似文献
94.
For multiuser packet communications with unpredictable user demands (e.g., in a local or metropolitan area network), coordination and control of access to the frequency-division multiplexing (FDM) channels are difficult. B. Glance (J. Lightwave Technol., vol.10, pp.1323-1328, Sep 1992) proposed using a simple protection-against-collision (PAC) circuit to solve this media access problem and achieve full optical connectivity. The PAC system has the potential to interconnect hundreds of ports, each transmitting at several gigabits per second. Performance aspects of the PAC optical packet network are discussed here. The delay-throughout performance of this network is analyzed for uniform traffic patterns. The results show that in geographically distributed applications the maximum achievable throughput (normalized to the transmission rate) is typically between 0.4 and 0.5 per channel. In a centralized switch the (normalized) maximum achievable throughput can approach 0.8 per channel 相似文献
95.
Hulfachor R.B. Ellis-Monaghan J.J. Kim K.W. Littlejohn M.A. 《Electron Devices, IEEE Transactions on》1996,43(4):661-663
A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage Vd considerably less than the Si/SiO2 injection barrier height φb. Simulation of both devices reveal that 1) although qVd<φb, carriers can obtain energies greater than φb, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates 相似文献
96.
J. S. Kim D. G. Seiler R. A. Lancaster M. B. Reine 《Journal of Electronic Materials》1996,25(8):1215-1220
Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg1−xCdxTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained
within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with
the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the
alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (Eg ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 102 m2Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering.
A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed
electron mobility and is found to be of the order of 10−4 of the mass of a free electron. 相似文献
97.
Of all the products of electrical technology, none has made a more profound difference to our way of life than the humble light bulb. The author describes the history of the light bulb from the time it was introduced and started to replace gas lamps to the present day. In particular the author discusses the early developments in arc lighting and incandescent filament lamps. The author also discusses the introduction of mercury vapour lamps, fluorescent lamps, and evacuation of the lamps 相似文献
98.
The design of plasma glucose controllers traditionally relies on linear approaches. The implementation of an appropriate nonlinear model of the insulin/glucose regulatory system into an adaptive controller should predict the insulin-dependent glucose removal more reliably and hence provide better control over a wide spectrum of insulin signals. A discretized form of the model leads to a two-step procedure. First, the measured plasma glucose levels associated with the erogeneous glucose infusion rates are used in the estimation of the past removal rates which, in turn, can be expressed as a weighted sum of past insulin inputs and previous values of the removal rate. Parameters of the sum are adjusted on-line by a recursive method of estimation which features a prefiltering of data to account for a corrupting coloured process noise. The same equation is in turn used to predict the time course of the insulin-dependent fractional rate of glucose removal. The performance of the controller. Tested in vivo in three pigs, is presented for various intravenous or subcutaneous rapid injections and staircase infusions of insulin. Plasma glucose is maintained at an average level of 99.9±8.7% of the target value (% set point±coefficient of variation). The controller reacts promptly to large and rapid variations in insulin action. Although control improves with the number of glucose measurements, the prediction of glucose removal allows for some flexibility in the monitoring of the plasma glucose. Sampling frequency varied from a 2 min interval during transient periods to 7 min as steady states were reached 相似文献
99.
Modeling and numerical simulations of the convective flows induced by the vibration of the monocrystal during crystal growth have been performed for two configurations simulating the Cz and FZ methods. This permitted to emphasize the role of different vibrational mechanisms in the formation of the average flows. It is shown that an appropriate combination of these mechanisms can be used to counteract the usual convective flows (buoyancy- and/or thermocapillary-driven) inherent to crystal growth processes from the liquid phase. While vibrational convection is rather complex due to these identified mechanisms, the new modeling used in the present paper opens up very promising perspectives to efficiently control heat and mass transfer during real industrial applications of crystal growth from the liquid phase. 相似文献
100.