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51.
Fractal error for detecting man-made features in aerial images   总被引:3,自引:0,他引:3  
A technique is proposed for aiding photointerpreters in detecting man-made features in aerial reconnaissance images. The technique, which uses a metric called fractal error, is based on the observed propensity of natural image features to fit a fractional Brownian motion model. Man-made features usually do not fit this model well, and consequently the fractal error metric may be used as a discriminant function for detecting man-made scene features  相似文献   
52.
Applications of the additive accumulation of damages (AAD) or the accelerated failure time (AFT) and the proportional hazards (PH) models in accelerated life testing with step-stresses are discussed. A new model including AAD and PH models is proposed. It is more reasonable than the PH model and wider then the AAD model. Constructing the maximum likelihood function is discussed  相似文献   
53.
Using an integral theory of grating diffraction we calculate efficiencies greater than 100% if a coating with gain is taken into account. A connection with guided modes is conjectured. The application in optical computing seems to be possible.  相似文献   
54.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 3, pp. 438–444, March, 1991.  相似文献   
55.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 535–540, October, 1991.  相似文献   
56.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
57.
We consider a space-time coded (STC) orthogonal frequency-division multiplexing (OFDM) system with multiple transmitter and receiver antennas over correlated frequency- and time-selective fading channels. It is shown that the product of the time-selectivity order and the frequency-selectivity order is a key parameter to characterize the outage capacity of the correlated fading channel. It is also observed that STCs with large effective lengths and ideal built-in interleavers are more effective in exploiting the natural diversity in multiple-antenna correlated fading channels. We then propose a low-density parity-check (LDPC)-code-based STC-OFDM system. Compared with the conventional space-time trellis code (STTC), the LDPC-based STC can significantly improve the system performance by exploiting both the spatial diversity and the selective-fading diversity in wireless channels. Compared with the previously proposed turbo-code-based STC scheme, LDPC-based STC exhibits lower receiver complexity and more flexible scalability. We also consider receiver design for LDPC-based STC-OFDM systems in unknown fast fading channels and propose a novel turbo receiver employing a maximum a posteriori expectation-maximization (MAP-EM) demodulator and a soft LDPC decoder, which can significantly reduce the error floor in fast fading channels with a modest computational complexity. With such a turbo receiver, the proposed LDPC-based STC-OFDM system is a promising solution to highly efficient data transmission over selective-fading mobile wireless channels  相似文献   
58.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.  相似文献   
59.
60.
Electrical resistivity of U3Tein4, U2Te3 (cubic) and UTe3 has been measured over temperature range 4.2–300 K. The two former compounds appear to be semimetallic conductors while the last one has semiconducting character. The results are discussed in the terms of available magnetic data.  相似文献   
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