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81.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
82.
E. A. Gurieva P. P. Konstantinov L. V. Prokof D. A. Pshenaĭ-Severin M. I. Fedorov Yu. I. Ravich 《Semiconductors》2006,40(7):763-767
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K. 相似文献
83.
V. S. Butylkin G. A. Kraftmakher 《Journal of Communications Technology and Electronics》2006,51(5):484-497
A new composite medium based on waveguiding structures loaded with bianisotropic gratings of planar double split rings (PDSRs) and planar helices is considered. The microwave transmission spectra of this medium are studied experimentally. The effective parameters of the medium are determined theoretically, and its passbands are investigated. The characteristics of the medium are compared to those of infinite homogeneous bianisotropic media. A relationship between the spectral transmission characteristics and the type of resonance excitation is established. The transparency bands and overforbidden bands of the composite medium are revealed. The combinations of the medium’s effective parameters that correspond to these bands are determined. It is shown that the transparency bands where the medium is characterized simultaneously by negative permittivity and negative permeability can be identified. 相似文献
84.
Ramanujam J. Jinpyo Hong Kandemir M. Narayan A. Agarwal A. 《Signal Processing, IEEE Transactions on》2006,54(1):286-294
Most embedded systems have limited amount of memory. In contrast, the memory requirements of the digital signal processing (DSP) and video processing codes (in nested loops, in particular) running on embedded systems is significant. This paper addresses the problem of estimating and reducing the amount of memory needed for transfers of data in embedded systems. First, the problem of estimating the region associated with a statement or the set of elements referenced by a statement during the execution of nested loops is analyzed. For a fixed execution ordering, a quantitative analysis of the number of elements referenced is presented; exact expressions for uniformly generated references and a close upper and lower bound for nonuniformly generated references are derived. Second, in addition to presenting an algorithm that computes the total memory required, this paper also discusses the effect of transformations (that change the execution ordering) on the lifetimes of array variables, i.e., the time between the first and last accesses to a given array location. The term maximum window size is introduced, and quantitative expressions are derived to compute the maximum window size. A detailed analysis of the effect of unimodular transformations on data locality, including the calculation of the maximum window size, is presented. 相似文献
85.
Rosendo Macias J.A. Gomez Exposito A. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(10):1098-1102
This brief presents and compares several recursive and nonrecursive techniques for the efficient computation of the running average of discrete signals. First of all, the standard recursive algorithm is considered and its long-term accuracy is assessed when the floating-point arithmetic is employed. A cheap refreshing strategy is proposed as a means of keeping the computed value close enough to the exact one. Then, two alternative nonrecursive algorithms, requiring only log2N additions, are developed, which are as reliable and accurate as the direct implementation 相似文献
86.
A new scheme is introduced for obtaining higher stability performance for the symplectic finite-difference time-domain (FDTD) method. Both the stability limit and the numerical dispersion of the symplectic FDTD are determined by a function zeta. It is shown that when the zeta function is a Chebyshev polynomial the stability limit is linearly proportional to the number of the exponential operators. Thus, the stability limit can be increased as much as possible at the cost of increased number of operators. For example, the stability limit of the four-exponential operator scheme is 0.989 and of the eight-exponential operator scheme it is 1.979 for fourth-order space discretization in three dimensions, which is almost three times the stability limit of previously published symplectic FDTD schemes with a similar number of operators. This study also shows that the numerical dispersion errors for this new scheme are less than those of the previously reported symplectic FDTD schemes 相似文献
87.
Solar cells based on SnO2/Cd0.4Zn0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I sc ≈ 21.2 mA/cm2, U oc ≈ 813 mV, and η = 14.7%). 相似文献
88.
Towards intelligent dressing 总被引:1,自引:0,他引:1
Egana I. Mendikute A. Urionaguena X. Alberdi H. 《IEEE instrumentation & measurement magazine》2006,9(3):38-43
The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability. 相似文献
89.
The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties. 相似文献
90.
Seidel A.R. Bisogno F.E. Pinheiro H. do Prado R.N. 《Industrial Electronics, IEEE Transactions on》2003,50(6):1267-1274
This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out. 相似文献