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131.
Summary X-ray reflectivity may be used to determine the internal structure of thin polymer films. An electron density difference of 10% for polystyrene and polyisoprene is sufficient to distinguish between a random distribution of lamellae, complete orientation parallel to the substrate surface and a surface induced formation of lamellae. The disappearance of the lamellar Bragg-peaks, with heating of the film, shows the transition into the disordered state.  相似文献   
132.
133.
In the spaces E q(Ω), 1 < q < ∞, introduced by Smirnov, we obtain exact order estimates of projective and spectral n-widths of the classes W r E p(Ω) and W r E p(Ω)Ф in the case where p and q are not equal. We also indicate extremal subspaces and operators for the approximative values under consideration.  相似文献   
134.
The bit-error rate (BER) performance of new iterative decoding algorithms (e,g,, turbodecoding) is achieved at the expense of a computationally burdensome decoding procedure. We present a method called early detection that can be used to reduce the computational complexity of a variety of iterative decoders. Using a confidence criterion, some information symbols, state variables, and codeword symbols are detected early on during decoding. In this way, the computational complexity of further processing is reduced with a controllable increase in the BER. We present an easily implemented instance of this algorithm, called trellis splicing, that can be used with turbodecoding. For a simulated system of this type, we obtain a reduction in the computational complexity of up to a factor of four, relative to a turbodecoder that obtains the same increase in the BER by performing fewer iterations  相似文献   
135.
The authors present a low-voltage BiCMOS dynamic minimum circuit using a parallel comparison algorithm for VLSI implementation of fuzzy controllers. Using low-voltage BiCMOS dynamic circuits and a parallel comparison algorithm, a four-4-bit-input minimum circuit designed, based on a 1μm BiCMOS technology, shows a 9.5ns comparison time, which is a ×2.5 improvement in speed as compared to that based on CMOS technology  相似文献   
136.
When hydrogen loading is used to enhance the photosensitivity of silica-based optical waveguides and fibres, the presence of molecular hydrogen dissolved in the glass matrix changes the effective index of propagation of guided optical modes by as much as 0.05%. Real-time monitoring of the reflectivity spectrum of Bragg gratings written in such conditions shows that the centre wavelength follows the changes in hydrogen concentration due to diffusion and reaction with glass defects  相似文献   
137.
Following a brief introduction to the applications for wavelength conversion and the different available conversion techniques, the paper gives an in depth analysis of cross gain and cross phase wavelength conversion in semiconductor optical amplifiers. The influence of saturation filtering on the bandwidth of the converters is explained and conditions for conversion at 20 Gb/s or more are identified. The cross gain modulation scheme shows extinction ratio degradation for conversion to longer wavelengths. This can be overcome using cross phase modulation in semiconductor optical amplifiers that are integrated into interferometric structures. The first results for monolithic integrated interferometric wavelength converters are reviewed, and the quality of the converted signals is demonstrated by transmission of 10 Gb/s converted signals over 60 km of nondispersion shifted single mode fiber  相似文献   
138.
A new scheme based on using an IIR design algorithm is presented to demultiplex critically sampled QPSK channels for onboard processing (OBP) satellites. Comparisons with an existing nonrecursive (FIR) transmultiplexer (TMUX) show that the presented IIR TMUX is also a suitable candidate for consideration in future OBP applications  相似文献   
139.
The authors report the first demonstration of a semiconductor external cavity waveguide laser, modulated at 2.5 Gbit/s over 100 km of standard optical fibre using a UV written grating in a planar silica waveguide as the feedback element  相似文献   
140.
A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented  相似文献   
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