Ideal amplifier spacing for reduction of Gordon-Haus jitter indispersion-managed soliton communications

Based on a variational analysis, the authors demonstrate that the noise-induced Gordon-Haus timing jitter in a dispersion-managed soliton transmission system can be substantially reduced by appropriate placement of the amplifiers     

Wideband microstrip array antenna with sidelobe cancellationchannels

An antenna array for wideband operation (up to 70%) is presented. The structure has low windloading area and consists of parallel printed circuit boards (PCB) with microstrip dipoles, feed network and metal fences placed between the PCBs. The low profile, low weight antenna array forms the main beam and three difference patterns for sidelobe cancellation. Experimental results are compared with calculations for both microstrip dipole and array     

FORECASTING MINERAL SUPPLY FROM MINERAL RENT DATA

An optimal control model of exhaustible resources is used to clarify the long run relationship between mineral rent and depletion cost at the industry level. A standard first order condition of the time rate of change of rents is reformulated to reveal that rent data may be used to help forecast the rise in extraction costs resulting from resource depletion. This application of the theory of exhaustible resources is illustrated using historical mineral industry rent and extraction cost data. A forecast of U.S. coal extraction costs, following the method proposed in this paper, suggests that future rates of extraction cost increases will be similar to rates experienced in the past.     

Capacity enhancement of cellular CDMA by traffic-based control ofspeech bit rate

Variable rate speech coding is now recognized as an important system component for high-capacity cellular networks because it exploits speech statistics to reduce the average bit rate, which results in reduced interference and increased capacity. Once a variable rate capability is available, an additional capacity enhancement can be achieved by introducing network control of the user bit rate in response to changing traffic levels. We introduce the concept of network control of rate and propose a particular network-control method for code-division multiple access (CDMA) systems. Based on an M/M/∞//M queueing model applied to a cell under heavy traffic conditions and a new performance measure called averaged speech quality, we obtain simulation results to demonstrate how network control of rate can achieve improved speech quality or increased capacity for a given quality objective     

Multispectral data compression using bidirectional interbandprediction

The introduction of high spatial and spectral resolution sensors on-board remote-sensing spacecraft has increased, by orders of magnitude, the data rates which need to be sustained on the down-link or cross-link transmission channels. Since these channels are severely limited in capacity, the need arises to perform on-board compression to reduce the volume of data which would need to be down-linked. This paper discusses the development and refinement of a low complexity lossy spectral/spatial compression method which provides high compression ratios at low levels of distortion. The developed techniques uses pixels in adjacent bands to predict the intensity of pixels in the band being compressed via a simple linear prediction model. This prediction method when combined with a low-distortion discrete cosine transform (DCT) block coding method yields performance comparable to block-adaptive Karhunen-Loeve Transform (KLT)-DCT methods without incurring the complexity penalty of the KLT. The methods' performance suffers under misregistration. A fractional-pixel interpolation enhancement to the basic technique significantly improves the performance in the case of misregistered bands     

Storage performance-metrics and benchmarks

The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described     

The correlation of texture and magnetic properties in Co-Cr films

This investigation focuses on the correlation between the crystallographic orientation of grains with respect to magnetic properties in Co-Cr films. Based on a distribution measured for the (0002) crystallographic pole densities, modified formulae describing the texture were used to calculate the coercivity Hc, the squareness ratio Rs (Mr⊥/TMs) and the anisotropy field Ha for Co-Cr films. In general, calculated values for the coercive force He agreed well with the measured values. The calculated Rs⊥. values were much larger than the measured ones, however, indicating that the influence of the demagnetizing field and the magnetostriction on the orientation of the magnetization cannot be neglected. On leave from Institute of Computing Technology, Academia Sinica, P.O.Box 2704-6, Beijing, P.R. China.     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

A unified diode model for circuit simulation

A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any presently available. The emphasis of this paper is on describing the model's extensive features and flexibility in the different domains of operation and is of particular interest in power applications