Neural stem cells express melatonin receptors and neurotrophic factors: colocalization of the MT<Subscript>1</Subscript>receptor with neuronal and glial markers

Background  

In order to optimize the potential benefits of neural stem cell (NSC) transplantation for the treatment of neurodegenerative disorders, it is necessary to understand their biological characteristics. Although neurotrophin transduction strategies are promising, alternative approaches such as the modulation of intrinsic neurotrophin expression by NSCs, could also be beneficial. Therefore, utilizing the C17.2 neural stem cell line, we have examined the expression of selected neurotrophic factors under different in vitro conditions. In view of recent evidence suggesting a role for the pineal hormone melatonin in vertebrate development, it was also of interest to determine whether its G protein-coupled MT₁ and MT₂ receptors are expressed in NSCs.     

Regularized resolvent transform for direct calculation of 45 degrees projections of 2D J spectra

The regularized resolvent transform (RRT) has been applied in a novel way to J-resolved spectra. This involves the direct calculation of the 45 degrees projection without constructing the 2D spectrum. The results show a significant resolution enhancement over that obtained by the 45 degrees projection of a 2D Fourier spectrum, even for much larger signals. In particular, RRT is able to resolve peaks that belong to different overlapping multiplets in a very crowded spectral region, where the conventional technique fails for any signal size. The resolving power of this method along with the significantly shorter signals required, make this method a powerful tool in spectral assignment.     

New measurements of G using the measurement standards laboratory torsion balance

This Letter presents the results of a series of measurements of the Newtonian gravitational constant G using the compensated torsion balance developed at the Measurement Standards Laboratory. Since our last published result using the torsion balance in the compensated mode of operation [Meas. Sci. Technol. 10, 439 (1999)]], several improvements have been made to reduce the uncertainty in the final result. The new measurements have used both stainless steel and copper large masses. The values of G for the two sets of masses are in good agreement. After combining all of the measurements we get a value of G=6.673 87(0.000 27) x 10(-11) m3 kg(-1) s(-2). This new value is 5 parts in 10(5) smaller than our previous published values.     

First measurement of the double spin asymmetry in (-->)e(-->)p-->e(prime)pi(+)n in the resonance region

The double spin asymmetry in the (-->)e(-->)p --> e(prime)pi(+)n reaction has been measured for the first time in the resonance region for four-momentum transfer Q2 = 0.35-1.5 GeV(2). Data were taken at Jefferson Lab with the CLAS detector using a 2.6 GeV polarized electron beam incident on a polarized solid NH3 target. Comparison with predictions of phenomenological models shows strong sensitivity to resonance contributions. Helicity-1/2 transitions are found to be dominant in the second and third resonance regions. The measured asymmetry is consistent with a faster rise with Q(2) of the helicity asymmetry A1 for the F(15)(1680) resonance than expected from the analysis of the unpolarized data.     

电缆与连接器（七）

（上接2008年第6期92页）3．3滤波器的安装滤波器在实际应用环境中的工作性能完全取决于其安装的方式,尤其是射频参考地的阻抗和滤波器到射频地的搭接阻抗。这些阻抗必须远远低于滤波器内并联电容的阻抗,同时,滤波器内部与外部的共模表面电流也必须具有最佳的返回路径。     

Design of a 50 kW, wideband Ka-band slow wave cyclotron amplifier

A two-stage slow wave cyclotron amplifier is investigated to demonstrate a high power, stable, and broad Ka-band radiation source, operating at a low beam power (~60 kV, ~5 amps) and a low magnetic field (~7 kG). A linear theory predicts that the second harmonic gyro-BWO is competing in the amplifier and can be stabilized by inserting a sever in the interaction circuit. A slow-time-scale non-linear code, with a sever included, predicts a saturated gain of 24-28 dB, an efficiency of 15-17%, and an instantaneous bandwidth of 15-20% at a beam axial velocity spread of 2%. A broadband RF coupler, a mode converter, and a RF vacuum window are designed by the use of a 3D electromagnetic, finite element code. Measured RF characteristics are in good agreement with predictions     

嵌入式POL DC/DC转换器设计

大多数嵌入式系统都是通过48V背板供电的。这个电压通常要降为更低的12V或5V中间电压,以向系统内的电路板供电。然而,在这些电路板上,大多数电路都要求供电电压范围在0.8V～3.3V,电流范围为几十mA至几十A。因此,需要负载点(POL)DC/DC转换器对12V或5V降压,以获得所需的电压和电流值。     

Technologies and the development of the Automated Metadata Indexing and Analysis (AMIA) system

The Automated Metadata Indexing and Analysis (AMIA) project aims to provide an effective digital asset management (DAM) tool for large digital asset databases. We began with text-based indexing since it is still the most reliable approach as compared with other content-based media features. AMIA not only searches for the text of the file name, but also utilizes embedded information such as the metadata in Maya files. The AMIA system builds a linked map between all dependency files. We present an approach of preserving previously established metadata created by the old DAM tools, such as AlienBrain, and integrating them into the new system. Findings indicate that AMIA has significantly improved search performance comparing to previous DAM tools. Finally, the ongoing and future work in the AMIA project is described.     

The manufacture and performance of diodes made in dielectricallyisolated silicon substrates containing buried metallic layers

Results are reported on the performance of diffused p⁺n diode structures manufactured on a novel silicon-on-metal-on-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current-voltage (I-V) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 μs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes     

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100 V and average leakage current densities at 70 V were only 55 nA/cm². MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45 × 10¹¹ cm^?2 for a dose of 2.7 Mrad.