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221.
Structural Chemistry - The present contribution elucidates the non-covalent interactions present within the molecular frameworks of a miscellany of mono and dihalo-salicylic acid derivatives from...  相似文献   
222.
BACKGROUND: Polyketides are important compounds with antibiotic and anticancer activities. Several modular polyketide synthases (PKSs) contain a terminal thioesterase (TE) domain probably responsible for the release and concomitant cyclization of the fully processed polyketide chain. Because the TE domain influences qualitative aspects of product formation by engineered PKSs, its mechanism and specificity are of considerable interest. RESULTS: The TE domain of the 6-deoxyerythronolide B synthase was overexpressed in Escherichia coli. When tested against a set of N-acetyl cysteamine thioesters the TE domain did not act as a cyclase, but showed significant hydrolytic specificity towards substrates that mimic important features of its natural substrate. Also the overall rate of polyketide chain release was strongly enhanced by a covalent connection between the TE domain and the terminal PKS module (by as much as 100-fold compared with separate TE and PKS 'domains'). CONCLUSIONS: The inability of the TE domain alone to catalyze cyclization suggests that macrocycle formation results from the combined action of the TE domain and a PKS module. The chain-length and stereochemical preferences of the TE domain might be relevant in the design and engineered biosynthesis of certain novel polyketides. Our results also suggest that the TE domain might loop back to catalyze the release of polyketide chains from both terminal and pre-terminal modules, which may explain the ability of certain naturally occurring PKSs, such as the picromycin synthase, to generate both 12-membered and 14-membered macrolide antibiotics.  相似文献   
223.
Textile‐based electronic techniques that can in real‐time and noncontact detect the respiration rate and respiratory arrest are highly desired for human health monitoring. Yarn‐shaped humidity sensor is fabricated based on a sensitive fiber with relatively high specific surface area and abnormal cross‐section. The response and recovery time of the yarn‐shaped humidity sensor is only 3.5 and 4 s, respectively, with little hysteresis, because of the hydrophobic property of these functional fibers and the grooves on the surface of the fibers, which is much faster than those of the commercial polyimide materials. Moreover, a battery‐free LC wireless testing system combined with the yarn‐shaped sensor is fabricated, which is further successfully imbedded into the intelligent mask to detect human breath. Based on the detection of LC wireless testing system, the frequency of 50.25 MHz under the exhaled condition shifts to 50.86 MHz under the inhaled situation of humidity sensor. In essence, the functional yarns with proper structure, would be an excellent candidature to the yarn‐shaped humidity sensor, in which there are good performance and wide application possibilities, eventually offering a facile method for the wireless detection of human physiological signals in the field of electronic fabrics.  相似文献   
224.
The photoassisted OMVPE growth technique is important for the fabrication of blue/green laser diodes based on CdxZn1−xSe quantum wells. Low temperature growth with photoassistance is key to the fabrication of these devices, however, the compositional control of CdxZn1−xSe becomes increasingly difficult as the growth temperature is reduced. We have studied the compositional control of CdxZn1−xSe using the sources DMCd, DMZn, and DMSe, with irradiation from a Hg arc lamp. We studied the dependence of the composition on the growth temperature, irradiation intensity, and source mass flows. The composition x increases with increasing temperature and decreases with increasing irradiation intensity. The solid-phase composition is a non-linear function of the gas-phase composition X. The slope of this characteristic, dx/dX, should be minimized for good compositional control. At 475°C without photoassistance, dx/dX is 1.75 near a composition of 20%, as determined from the data of Parbrook et al. Decreasing the temperature increases dx/dX. At 370°C with 12 mW/cm2, dx/dX ≈ 13 and at 350°C with 58 mW/cm2 dx/dX ≈ 60. We have investigated this behavior at 370°C with 12 mW/cm2 irradiation by studying both the composition and the growth rate as a function of the gas-phase composition. The growth rate is non-monotonic, and is minimum for a gas-phase composition of 0.20. The behavior is quite complex, and is not fully understood at the present time. Nonetheless, our results indicate that the Cd-bearing precursor is adsorbed much more strongly than the Zn-bearing precursor. In addition to this, the introduction of the DMCd strongly inhibits the growth of ZnSe. We have achieved sufficiently good compositional control at 370°C and 12 mW/cm2 to grow ZnSe/CdxZn1−xSe/ZnSe multiple quantum well structures. More work is necessary in order to clarify the roles of irradiation intensity and VI/II ratio so that good compositional control can be achieved at lower growth temperatures.  相似文献   
225.
The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon <1 0 0> samples were irradiated with 65 MeV oxygen ions at different fluences, 1×1013 to 1.5×1014 ions/cm2, and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to<100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200–700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200–400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane <2 1 1> has been formed in the silicon <1 0 0>after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss ~0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of ~1013 ions/cm2.  相似文献   
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Indole‐quinazolinone hybrids with active amides were synthesized, characterized, and assessed for their cytotoxicity. Two molecules displayed substantial activity in sulphorhodamine B assay method.  相似文献   
230.
A nonheme {FeNO}6 complex, [Fe(NO)(N3PyS)]2+, was synthesized by reversible, one‐electron oxidation of an {FeNO}7 analogue. This complex completes the first known series of sulfur‐ligated {FeNO}6–8 complexes. All three {FeNO}6–8 complexes are readily interconverted by one‐electron oxidation/reduction. A comparison of spectroscopic data (UV/Vis, NMR, IR, Mössbauer, X‐ray absorption) provides a complete picture of the electronic and structural changes that occur upon {FeNO}6–{FeNO}8 interconversion. Dissociation of NO from the new {FeNO}6 complex is shown to be controlled by solvent, temperature, and photolysis, which is rare for a sulfur‐ligated {FeNO}6 species.  相似文献   
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