Flash器件中氧化硅/氮化硅/氧化硅的特性

对普遍采用的氧化硅/氮化硅/氧化硅( ONO)三层复合结构介质层的制备工艺及特性进行了研究分析,研究了ONO的漏电特性以及顶氧( top oxide)和底氧( bottom oxide)的厚度对ONO层漏电的影响.结果表明,采用较薄的底氧和较厚的顶氧,既能保证较高的临界电场强度,又能获得较薄的等效氧化层厚度,提高耦合率,降低编程电压.     

GaN-MOCVD设备反应室流场的CFD数值仿真

采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议.     

计费帐务系统发展趋势分析

计费帐务系统作为业务运营支撑系统的重要组成部分。其发展方向日益受到运营商的关注。通过对计量帐务系统的研究，首先介绍了传统计费模式的现状以及存在的问题，然后结合各大公司产品对计责帐务系统的关键技术进行了分析，最后提出未来计费帐务系统的特征及对其发展趋势的展望。     

Temperature effects on surface activity and application in oxidation of toluene derivatives of CTAB-SDS with KMnO4

The γ_cmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS. Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives by increasing the contact between two reacting phases.     

An Efficient Selective Oxidation of Alcohols with Potassium Permanganate Adsorbed on Aluminum Silicate under Solvent-free Conditions and Shaking

A new procedure for the selective oxidation of alcohols to the corresponding aldehydes and ketones with potassium permanganate supported on aluminum silicate at room temperature under solvent-free conditions and shaking is reported.     

提高托盘利用效率的重要手段——电子信息化管理

托盘能否有效运用对物流的畅通与否关系重大,这已经引起了国内外专家和学者们的重视,并就此制定了托盘电子信息化管理系统,旨在更合理地使用托盘,推进托盘一体化和共用系统的建立。而RFID技术在托盘的电子信息化管理的应用更将大大提高物流的效率与准确性,托盘电子信息化管理将成为今后托盘管理的趋势。     

半导体量子点中极化子的有效质量

研究了半导体量子点中极化子的有效质量.采用改进的线性组合算符方法,导出在电子-体纵光学声子(LO)强耦合时抛物量子点中极化子的振动频率、相互作用能和有效质量随受限强度和电子-声子耦合强度的变化.对RbCl晶体量子点进行了数值计算,结果表明,量子点受限越强,半导体量子点中强耦合极化子的振动频率和有效质量就越大;极化子的相互作用能随受限强度的增加先急剧增加,当达到极值后,随受限强度的增加而急剧减少     

应用数字PWM器件SA4828的大功率直流电源

本文介绍一种智能型、高精度PWR控制器SA4828，其控制实行全数字化产生三相脉宽调制波形．本文采用此器件设计大功率直流电源应用于22KW直流电机测试，对感性负载表现出具有纹波小，响应迅速、硬件电路简洁、控制简单易于编写的优点。     

Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.     

全球宽带电话市场分析

近两年．IP电话又叫网络电话的发展受到全球的关注。随着宽带接入的发展，基于宽带接入提供的网络电话具有了更大的生命力。从宽带电话的经营模式出发，探究这类业务的出现时现有话音业务市场的影响，进而分析这类业务的发展前景。