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101.
Tiwari S.P. Namdas E.B. Ramgopal Rao V. Fichou D. Mhaisalkar S.G. 《Electron Device Letters, IEEE》2007,28(10):880-883
Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2- thienylethoxycarbonyl)-propyl)-{5}-l-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 x 10-2 cm2/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The ON/OFF ratios reported in this letter, which are in the range of 105 -106, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP. 相似文献
102.
We consider three one-dimensional quantum, charged and spinless particles interacting through delta potentials. We derive
sufficient conditions which guarantee the existence of at least one bound state. 相似文献
103.
Butyltins were analyzed in waters from California river and lake marinas and were detected at the part per trillion (ppt) level in most locations. The tributyltin:dibutyltin (TBT/DBT) ratios in the fresh waters were similar to those in their saline counterparts indicating like rates of degradation in the two salinity regimes. 相似文献
104.
Spataro A. Deval Y. Begueret J.-B. Fouillat P. Belot D. 《Solid-State Circuits, IEEE Journal of》2002,37(3):336-341
In this paper, we present a waveform converter implemented on a 0.25-μm CMOS technology using a dedicated design methodology (Delay Oriented Design). The circuit converts a square wave signal in both in-phase and quadrature-phase sinusoidal differential outputs. It also multiplies the frequency by seven. The output frequency range of this converter extends from 1.05 GHz up to 2.17 GHz. This converter is dedicated for the design of a third-generation mobile phone synthesizer using a double-loop architecture. For an output frequency of 2 GHz, the measured phase noise at 10-kHz offset from the carrier is -97 dBc/Hz. The circuit consumes 50 mW from a 2.5-V supply 相似文献
105.
The application of reflex optoelectronic switching matrices (ROSM) to signal processing in the gigahertz region is analyzed. Various signal processing functions such as delay generation, loop filtering, word generation/detection, integration, and digital to analog conversion are identified and their respective realizations in a ROSM are presented. It is found that for dedicated signal processing functions, simpler submatrices instead of full matrices can be employed with significant reduction in complexity and cost. The performance of ROSM's using currently commercially available components confirms the feasibility of gigahertz signal processing with ROSM's. 相似文献
106.
Reductions in overshoot following intense sound exposures 总被引:1,自引:0,他引:1
Overshoot refers to the poorer detectability of brief signals presented soon after the onset of a masking noise compared to those presented after longer delays. In the present experiment, brief tonal signals were presented 2 or 190 ms following the onset of a broadband masker that was 200 ms in duration. These two conditions of signal delay were tested before and after a series of exposures to a tone intense enough to induce temporary threshold shift (TTS). The magnitude of the overshoot was reduced after the exposure when a TTS of at least 10 dB was induced, but not when smaller amounts of TTS were induced. The reduction in overshoot was due to a decrease in the masked thresholds with the 2-ms delay; masked thresholds with the 190-ms delay were not different pre- and post-exposure. The implication is that the mechanisms responsible for the normal overshoot effect are temporarily inactivated by the same stimulus manipulations that produce a mild exposure-induced hearing loss. Thus the result is the paradox that exposure to intense sounds can produce a loss of signal detectability in certain stimulus conditions and a simultaneous improvement in detectability in other stimulus conditions. 相似文献
107.
The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps. 相似文献
108.
109.
110.
Summary High-purity indium was analysed by spark source mass spectrometry, using electrical and photoplate detection. For the calibration of the differences in elemental sensitivity, a standard sample was prepared in which 10 impurities were determined by graphite furnace atomic absorption spectrometry. In this way accuracies of less than 40% were obtained for relatively homogeneous elements at ppm and sub-ppm level. About 40 elements could be determined with detection limits of 10 to 30 ppb. Two pattern recognition methods, principal component analysis and clustering analysis, were applied to obtain information on trace element distribution, which indicated that a number of elements were strongly spatially correlated in the analysed sample.
On leave from: Department of Chemistry, Nanjing Normal University, Nanjing, People's Republic of China 相似文献
Chemische Analyse und Verteilungsbestimmung von Spurenelementen in Indium-Matrix durch Funkenquellen-Massenspektrometrie
On leave from: Department of Chemistry, Nanjing Normal University, Nanjing, People's Republic of China 相似文献