Three-dimensional structure of Saccharomyces cerevisiae inorganic pyrophosphatase complexed with cobalt and phosphate ions

Crystals of Saccharomyces cerevisiae inorganic pyrophosphatase suitable for X-ray diffraction study were grown by cocrystallization of the enzyme with cobalt chloride and imidodiphosphate. Saccharomyces cerevisiae is a metal-dependent enzyme which catalyzes hydrolysis of inorganic pyrophosphate to orthophosphate. The three-dimensional structure of this enzyme was solved by the molecular-replacement method and refined at 1.8 Å resolution to an R factor of 19.5%. Cobalt and phosphate ions were revealed in the active centers of both identical subunits (A and B) of the pyrophosphatase molecule. In subunit B, a water molecule was found between two cobalt ions. It is believed that this water molecule acts as an attacking nucleophile in the enzymatic cleavage of the pyrophosphate bond. It was demonstrated that cobalt ions and a phosphate group occupy only part of the potential binding sites (two chemically identical and crystallographically independent subunits have different binding sites). The arrangement of ligands and the structure of the nucleophile-binding site are discussed in relation to the mechanism of action of the enzyme and the nature of the metal activator.     

Laser coupling to single-mode fibre using graded-index lenses and compact disc 1.3 ?m laser package

A 1.3 ?m laser in a compact disc package is coupled to single-mode fibre using two graded-index lenses in a nearly confocal scheme. An increase in the alignment tolerance at the lens-lens interface by a factor of six suggests the design for a potentially very low-cost connectorised laser package. The coupling efficiency of approx. 6% (?12 dB) is shown to be adequate for local loop applications.     

Reminiscence: diffraction and the mountains of Alaska

Discusses, from a personal point of view, experiments carried out to study the diffraction and propagation of VHF, HF and MF radio waves in the early-mid 1950s in the mountains of Alaska     

A series active power filter based on a sinusoidalcurrent-controlled voltage-source inverter

A series active power filter working as a sinusoidal current source, in-phase with the mains voltage, has been developed and tested. The amplitude of the fundamental current in the series filter is controlled through the error signal generated between the load voltage and a pre-established reference. The control allows an effective correction of power factor, harmonic distortion and load voltage regulation. Compared with previous methods of control developed for series active filters, this method is simpler to implement because it is only required to generate a sinusoidal current, in-phase with the mains voltage, the amplitude of which is controlled through the error in the load voltage. The proposed system has been studied analytically and tested using computer simulations and experiments. In the experiments, it has been verified that the filter keeps the line current almost sinusoidal and in-phase with the line voltage supply. It also responds very quickly under sudden changes in load conditions, reaching its steady-state in about two cycles of the fundamental     

New Classes of Toda Soliton Solutions

We provide a detailed investigation of limits of N–soliton solutions of the Toda lattice as N tends to infinity. Our principal results yield new classes of Toda solutions including, in particular, new kinds of soliton–like (i.e., reflectionless) solutions. As a byproduct we solve an inverse spectral problem for one–dimensional Jacobi operators and explicitly construct tri–diagonal matrices that yield a purely absolutely continuous spectrum in (-1,1) and give rise to an eigenvalue spectrum that includes any prescribed countable and bounded subset of . Received: 16 October 1995/Accepted: 23 July 1996     

Important lessons derived from X.500 case studies

X.500 is a new and complex electronic directory technology that is still unproven in many organizations. The author presents case studies of 15 pioneering pilot and operational X.500 based directory services, and provides valuable insights into how organizations are coming to understand this new technology and derive benefits from it. The case studies presented cover a reasonably broad spectrum of organizations, including computer suppliers, government organizations, universities, and research institutes, as well as the UK and US defense community. Some of the factors that were critical to the success of the X.500 projects studied are identified     

Modeling electromigration lifetime under bidirectional currentstress

Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points     

Electrical coupling and impulse propagation in anatomically modeledventricular tissue

Computer simulations were used to study the role of resistive couplings on flat-wave action potential propagation through a thin sheet of ventricular tissue. Unlike simulations using continuous or periodic structures, this unique electrical model includes random size cells with random spaced longitudinal and lateral connections to simulate the physiologic structure of the tissue. The resolution of the electrical model is ten microns, thus providing a simulated view at the subcellular level. Flat-wave longitudinal propagation was evaluated with an electrical circuit of over 140,000 circuit elements, modeling a 0.25 mm by 5.0 mm sheet of tissue. An electrical circuit of over 84,000 circuit elements, modeling a 0.5 mm by 1.5 mm sheet was used to study flat-wave transverse propagation. Under normal cellular coupling conditions, at the macrostructure level, electrical conduction through the simulated sheets appeared continuous and directional differences in conduction velocity, action potential amplitude and V˙_max were observed. However, at the subcellular level (10 μm) unequal action potential delays were measured at the longitudinal and lateral gap junctions and irregular wave-shapes were observed in the propagating signal. Furthermore, when the modeled tissue was homogeneously uncoupled at the gap junctions conduction velocities decreased as the action potential delay between modeled cells increased. The variability in the measured action potential was most significant in areas with fewer lateral gap junctions, i.e., lateral gap junctions between fibers were separated by a distance of 100 μm or more     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters