Simultaneous determination of metformin and glimepride in pharmaceutical dosage form by reverse-phase liquid chromatography

A simple, rapid, and precise reversed-phase liquid chromatographic method has been developed for the simultaneous determination of metformin in combination with glimepride. Under the developed conditions, good separation of the analytes was achieved in short analysis time. Several parameters affecting the separation of the analytes were studied, including pH and the concentration of SDS. The method is validated and shown to be linear in the range of 25 microg/mL to 150 microg/mL for metformin and 0.1 microg/mL to 0.6 microg/mL for glimepride. The method is applied for the analysis of these analytes in commercially available tablets.     

dV/dt effect in high-voltage (1.5 kV) 4H–SiC thyristors

The switching of high-voltage (1.5 kV) 4H–SiC gate turn-off thyristors (GTOs) by the dV/dt effect has been studied in the temperature range from 300 to 504 K. At a 30 ns rise time of the forward bias V(t), the characteristic bias at which the structure under investigation can be switched on by the dV/dt effect decreases steadily from 289 V at room temperature (dV/dt 9.7 kV/μs) to 137 V at T = 504 K. The characteristic critical charge per unit area, Q_cr, equal to 1.9 × 10⁻⁷ C/cm² at room temperature, also decreases steadily as the temperature increases. The main physical mechanisms that contribute to Q_cr formation and the temperature dependence of the critical charge are qualitatively analyzed. The influence exerted by two-dimensional processes on the dV/dt switching is examined by making analytical estimates and using a computer simulation. The results obtained agree well with experimental data.     

The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs

In this paper, we investigate the effective inversion layer mobility of lateral 4H-SiC metal oxide semiconductor field-effect transistors (MOSFETs). Initially, lateral n-channel MOSFETs were fabricated with three process splits to investigate phosphorus implant activation anneal temperatures of 1200, 1650, and 1800°C. Mobility results were similar for all three temperatures (using a graphite cap at 1650°C and 1800°C). A subsequent experiment was performed to determine the effect of p-type epi-regrowth on the highly doped p-well surface. The negative effects of the high p-well doping are still seen with 1500 ? p-type regrowth, while growing 0.5 μm or more appears to be sufficient to grow out of the damaged area. A continuing series of tests are being conducted at present.     

Fault Coverage on RF VCOs and BIST for Wafer Sort Using Peak-to-Peak Voltage Detectors

A complete study of the fault coverage achievable on two Radio Frequency (RF) Voltage Controlled Oscillators (VCO) is carried out. The peak-to-peak output voltage detection grants the maximal catastrophic and parametric fault coverage. The VCOs and the BIST (Built-In Self-Test) circuitry are designed using the STM CMOS 65 nm process. The frequency of oscillation is 3.6 GHz and the phase noise obtained at 1 MHz offset from the carrier is of −121.7 dBc/Hz for VCO1 and of −118.8 dBc/Hz for VCO2. The performances of the VCOs are simulated before and after the insertion of the circuitry for the BIST, in order to confirm the transparency of the BIST.     

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

Silicon carbide (4H-SiC) power metal–oxide–semiconductor field-effect transistors (MOSFETs) have been attracting tremendous attention for high-power applications at a wide range of operating temperatures, owing to their normally-off characteristics, high-speed switching operation, avalanche capability, and low on-resistance. To optimize performance of 4H-SiC MOSFETs for various applications at different temperatures, it is important to understand the mechanisms of temperature dependence of the key parameters, such as on-resistance, threshold voltage, and metal–oxide–semiconductor (MOS) channel mobility. We report on the temperature dependence of the on-resistance of 20 A, 1200 V 4H-SiC power MOSFETs for temperatures ranging from −187°C to 300°C. The MOSFET showed normally-off characteristics throughout the entire experimental temperature range. Different temperature dependences of the total on-resistance in different temperature regimes have been observed. Due to the poor MOS channel mobility and the low free carrier concentration in the inversion channel of the 4H-SiC MOSFET, the MOS channel resistance is the dominant part of the total on-resistance. This was also found to be true in a 4H-SiC long-channel lateral MOSFET.     

Spectroscopic properties of Ho3+ ions doped in tellurite glass

Spectroscopic properties of Ho3+ doped tellurite glass (1 mol.% of Ho3+) have been studied. The absorption and fluorescence spectra have been recorded and analysed using the Judd-Offelt theory. The analysis indicates that Ho doped tellurite glasses can show lasing on the 5F4 (5S2)-5I8 transition (548.0 nm).     

Novel saccharinate-bridged palladium complexes for efficient C-O bond activation displaying promising luminescence properties

The synthesis of mono- and dinuclear cyclometallated palladium(II) complexes with deprotonated saccharinate ligands displaying different coordination modes is described. The new compounds were prepared by direct reaction between saccharine and the corresponding hydroxo-complexes [{Pd(μ-OH)(C^N)}(2)] (C^N = 2-(2-pyridyl)phenyl (Phpy) I; = 7,8-benzoquinolyl (Bzq) II), showing a general formula [{Pd(μ-sac)(C^N)}(2)] with saccharinate 1 displaying a bridging -NCO-coordination mode. Bridge splitting with neutral ligands (L = pyridine (py) 2, quinoline (quinol) 3 or acridine (acrid) 4) yielded new mononuclear derivatives with saccharinate acting as an N-monodentated ligand. Structural characterization by X-ray diffraction of complexes I1, I2 and II2 confirmed the proposed formulae. All complexes emit in the solution and solid state at room temperature. Emission features between 640-680 nm in the solid state for complexes I1 and II1 are significantly red-shifted if compared to the emission in solution. These broad emissions are consistent with the simultaneous presence of (3)ππ* and (3)MMLCT transitions indicating the existence of a strong intramolecular Pd-Pd ground state interaction. The dimeric complexes have also shown to catalyze Suzuki-Miyaura cross-coupling of coumaryl tosylate and aryl boronic acids under phosphine-free conditions. Initial studies suggest the involvement of palladium nanoparticles, which has been further investigated using mercury-drop test and poisoning experiments.     

A gold nanocage-CNT hybrid for targeted imaging and photothermal destruction of cancer cells

This communication reports the design of a novel aptamer conjugated gold nanocage decorated SWCNTs hybrid nanomaterial for targeted imaging and selective photothermal destruction of the prostate cancer cells.