Analytical chemistry and the cone penetrometer: In situ chemical characterization of the subsurface

The development of novel microanalytical techniques forin situ chemical characterization of the terrestrial subsurface environment has grown significantly over the last decade, particularly those instruments that are interfaced to the cone penetrometer. Cone penetrometer testing (CPT) has emerged as an effective means to introduce samplers and probes forin situ analysis of contaminants in soil and groundwater matrices. A variety ofin situ chemical samplers for CPT have been developed that can be driven into the subsurface to collect soil gas, groundwater, or soil samples at depth, thus providing a means of determining the vertical and horizontal extent of contamination. Cone penetrometer testing is also being explored as a means to deliverin situ subsurface sensor probes, including probes based on laser-induced fluorescence, Raman, and infrared spectroscopies for organics; on laser-induced breakdown and X-ray fluorescence spectroscopies for heavy metals; and on passive gamma-ray spectroscopy for radionuclides. The range of analytical technologies used in CPT for the determination of organic and inorganic species in the subsurface is described.     

Nickel-manganese sulfido carbonyl cluster complexes. synthesis, structure, and properties of the unusual paramagnetic complexes Cp2Ni2Mn(CO)3(mu 3-E)2, E = S, Se

The reaction of Mn(2)(CO)(7)(mu-S(2)) with [CpNi(CO)](2) yielded the paramagnetic new compound Cp(2)Ni(2)Mn(CO)(3)(mu(3)-S)(2) (1) and a new hexanuclear metal product Cp(2)Ni(2)Mn(4)(CO)(14)(mu(6)-S(2))(mu(3)-S)(2) (2). Structurally, compound 1 contains two triply bridging sulfido ligands on opposite sides of an open Ni(2)Mn triangular cluster. EPR and temperature-dependent magnetic susceptibility measurements of 1 show that it contains one unpaired electron. The electronic structure of 1 was determined by Fenske-Hall molecular orbital calculations which show that the unpaired electron occupies a low lying antibonding orbital delocalized unequally across the three metal atoms. The selenium homologue Cp(2)Ni(2)Mn(CO)(3)(mu(3)-Se)(2) (3) was obtained from the reaction of a mixture of Mn(2)(CO)(10) and [CpNi(CO)](2) with elemental selenium and Me(3)NO.2H(2)O. It also has one unpaired electron. Compound 1 reacted with elemental sulfur to yield the dinickeldimanganese compound, Cp(2)Ni(2)Mn(2)(CO)(6)(mu(4)-S(2))(mu(4)-S(5)), 4, which can also be made from the reaction of Mn(2)(CO)(7)(mu-S(2)) with [CpNi(CO)](2) and sulfur. Compound 4 was converted back to 1 by sulfur abstraction using PPh(3). The reaction of Mn(2)(CO)(10) with [CpNi(CO)](2) in the presence of thiirane yielded the ethanedithiolato compound CpNiMn(CO)(3)(mu-SCH(2)CH(2)S) (5), which was also obtained from the reaction of Mn(4)(CO)(15)(mu(3)-S(2))(mu(4)-S(2)) with [CpNi(CO)](2) in the presence of thiirane. Compound 5 reacted with additional quantities of thiirane to yield the new compound CpNiMn(CO)(3)[mu-S(CH(2)CH(2)S)(2)], 6, which contains a 3-thiapentanedithiolato ligand that bridges the two metal atoms. Compound 6 was also obtained from the reaction of Mn(2)(CO)(10) with [CpNi(CO)](2) and thiirane. The molecular structures of the new compounds 1-6 were established by single-crystal X-ray diffraction analyses.     

Simulation of electronic and geometric degrees of freedom using a kink-based path integral formulation: application to molecular systems

A kink-based path integral method, previously applied to atomic systems, is modified and used to study molecular systems. The method allows the simultaneous evolution of atomic and electronic degrees of freedom. The results for CH4, NH3, and H2O demonstrate this method to be accurate for both geometries and energies. A comparison with density functional theory (DFT) and second-order Moller-Plesset (MP2) level calculations show the path integral approach to produce energies in close agreement with MP2 energies and geometries in close agreement with both DFT and MP2 results.     

Organometallic VPE growth of AlxGa1−xAs

The " hybrid" organometallic VPE process for the growth of Al_xGa_l-xAs has been explored. Six growth parameters have been considered; substrate orientation, substrate temperature during growth, total flow rate and ratios of Al, HC1 and As to the total group III flow rate. The effects of these six growth parameters on the growth process (growth rate, composition and surface morphology) and the materials properties (carrier concentration, photoluminescence intensity and spectrum) have been systematically studied. A technique has been developed for the growth of heterostructures by changing only the H₂ diluent flow rate. This results in high quality heterostructures with x changing from 0.05 to 0.30 in > 100 å.     

Network Discovery and Verification

Due to its fast, dynamic, and distributed growth process, it is hard to obtain an accurate map of the Internet. In many cases, such a map-representing the structure of the Internet as a graph with nodes and links-is a prerequisite when investigating properties of the Internet. A common way to obtain such maps is to make certain local measurements at a small subset of the nodes, and then to combine these in order to "discover" (an approximation of) the actual graph. Each of these measurements is potentially quite costly. It is thus a natural objective to minimize the number of measurements which still discover the whole graph. We formalize this problem as a combinatorial optimization problem and consider it for two different models characterized by different types of measurements. We give several upper and lower bounds on the competitive ratio (for the online network discovery problem) and the approximation ratio (for the offline network verification problem) in both models. Furthermore, for one of the two models, we compare four simple greedy strategies in an experimental analysis     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

Time-dependent internal Quantum Efficiency and diffusion Modulation Transfer Function of N/P photodiodes

The minority carrier continuity equation has been solved with the Green’s function approach in a N/P photodiode under the low-level injection assumption. The analytical solution obtained with this approach depends on the three spatial coordinates and on time. The diffusion and the collection of the excess minority carriers have been studied during the transitional period corresponding to very short integration times. The internal Quantum Efficiency and the diffusion Modulation Transfer Function have been calculated according to time. The simulations showed that they evolve with time until their steady-state values. When the integration time is very short, this evolution has to be taken into account for the estimation of the sensitivity of a photodiode and the contrast on an image of a sensor based on several adjacent N/P-type photodiodes.     

New reaction of formation of the fused tricyclic bispyrroloquinone ring system

A one-pot procedure to difunctionalized fused tricyclic bispyrroloquinone derivatives involving the condensation of N-tosylindoledione and α-ketoamines is described.     

Locally s-distance transitive graphs and pairwise transitive designs

The study of locally s-distance transitive graphs initiated by the authors in previous work, identified that graphs with a star quotient are of particular interest. This paper shows that the study of locally s-distance transitive graphs with a star quotient is equivalent to the study of a particular family of designs with strong symmetry properties that we call nicely affine and pairwise transitive. We show that a group acting regularly on the points of such a design must be abelian and give general construction for this case.