Synthesis of N-(Dimethylsulfamoyl)aldimines,a New Type of Aldimine Derivative

N-(Dimethylsulfamoyl)aldimines (3) a new type of shelf-stable aldimine derivatives, are readily prepared from aldehydes and N-(dimethylsulfamoyl)amide (2) in refluxing toluene.     

One Pot Phase Transfer Synthesis of O-Alkyl,S-Methyl Dithiocarbonates (Xanthates)

O-Alkyl, S-methyl dithiocarbonates of phenol, benzyl, primary and secondary alcohols were prepared in a one pot procedure under phase transfer catalysis conditions.     

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Ohne Zusammenfassung     

Disorder in ice polymorphs: A Monte Carlo simulation study

Two water molecules connected by hydrogen bond in hexagonal ice can have four possible configurations. These configurations are distinguished by the relative orientation of the two molecules and termed for obvious reasons as c-cis, h-cis, c-trans, and h-trans. The occurrence of symmetry permitted dimer orientations is a characteristic feature of each ice polymorph. In the proton-ordered structures the occurrence of orientations is strictly determined, while in the proton-disordered structures it can vary within certain limits. We performed Monte Carlo simulations using the so-called TIP5P-EW, TIP4P-EW and TIP4P-2005 interaction models to study this isomerism for the polymorphs of ice. We found that the variation of energy with the frequency of different dimer orientations in the proton-disordered phases is large enough to influence the results of phase stability studies. Knowing the distributions of dimer orientations of the ice IX-ice III ordered-disordered polymorph pairs, we could estimate the internal energy of ice IX using dimer energies assigned to certain orientations in the disordered phase of ice III. In agreement with experimental evidences at low temperatures the TIP4P-EW and TIP4P-2005 potentials predicted lower energy for ice VIII than for ice VII.     

提高PLC性能的精密信号处理和数据转换IC

可编程逻辑控制器(PLC)是一种基于计算机的紧凑电子系统,该系统使用数字或模拟输入和输出模块控制机械、处理器和其它的控制模块.     

High-Temperature Stable IrxSi Gates With High Work Function on HfSiON p-MOSFETs

A novel 1000 degC-stable Ir_xSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir_xSi/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface     

Low-loss planar lightwave circuit OADM with high isolation and nopolarization dependence

A passive optical add-drop multiplexer with 1 dB of insertion loss and 36 dB of isolation is fabricated by writing Bragg gratings in a waveguide Mach-Zehnder interferometer using ArF excimer laser light. The spectral properties and bit-error-rate performance of the device are fully characterized using polarized light