100 mK bolometers for the submillimetre common-user bolometer array (scuba) I. Design and construction

We describe the design and construction of bolometric detectors for SCUBA - the Submillimetre Common-User Bolometer Array for the James Clerk Maxwell Telescope in Hawaii. The instrument contains 131 individual detectors, in two arrays, optimized for the submillimetre atmospheric transmission windows. The detectors are cooled by dilution refrigeration to a temperature of 100 mK, so that the receiver performance will be limited by photon noise from the sky and telescope background in all wavebands. A future paper will describe the performance of the detectors with reference to typical data obtained during the laboratory commissioning period.     

Eigenstates of polarization of elliptical single-mode fibers

The degree of polarization of radiation in an elliptical polarization-maintaining fiber and the polarization states of eigenpolarization modes of such fibers have been experimentally investigated in a wide spectral range. It has been shown that the elliptical fibers are uniform, homogeneously twisted fibers with elliptically polarized eigenpolarization modes. The ellipticity of the eigenpolarization mode is independent of fiber length and increases with wavelength, while the azimuth of the eigenpolarization mode is spectrally independent     

Advanced thin-film silicon-on-sapphire technology: microwavecircuit applications

This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFET's optimized for microwave use, with 0.5-μm optically defined gate lengths and a T-gate structure, have f_t values of 25 GHz (14 GHz) and f_max values of 66 GHz (41 GHz) for n-channel (p-channel) devices and have noise figure values below 1 db at 2 GHz, some of the best reported performance characteristics of any silicon-based MOSFET's to date. On-chip spiral inductors exhibit quality factors above ten. Circuit performance compares favorably with that of other CMOS-based technologies and approach performance levels similar to those obtained by silicon bipolar technologies. The results demonstrate the significant potential of this technology for microwave applications     

Numerical analysis of dissipative instabilities in toroidal plasma configurations with a noncircular cross-section

Translated from Pryamye i Obratnye Zadachi Matematicheskoi Fiziki, pp. 198–203, 1991.     

Interaction of soliton with sinusoidal wave packet

The interaction of a soliton of the Nonlinear Schrodinger Equation (NSE) with a weak sinusoidal wave packet is treated analytically. The second-order soliton solution containing the original soliton and a perturbing soliton is expanded to first order in the amplitude of the perturbating soliton. From this expansion, one obtains the associate function of Gordon (1992) and a continuous change of position and phase of the perturbed soliton. One finds that the soliton experiences a second-order change of velocity under the influence of the perturbation. This result is then used to derive the displacement due to a wave packet of general shape, which is also confirmed by computer simulation     

Stochastic resonance in perspective

Summary We outline the historical development of stochastic resonance (SR), a phenomenon in which the signal and/or the signal-to-noise ratio in a nonlinear system increase with increasing intensity of noise. We discuss basic theoretical ideas explaining and describing SR, and we review some revealing experimental data that place SR within the wider context of statistical physics. We emphasize the close relationship of SR to some effects that are well known in condensed-matter physics. Paper presented at the International Workshop ?Fluctuations in Physics and Biology: Stochastic Resonance, Signal Processing and Related Phenomena?, Elba, 5–10 June 1994.     

High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications     

30 GHz pulse train generation from a multiquantum well electroabsorption intensity modulator

Stable optical pulse trains with repetition rates as high as 20-30 GHz have been successfully generated at 1.55 mu m from an InGaAs/InAlAs multiquantum well electroabsorption modulator for the first time.<>     

Opposite-channel-based charge injection in SOI MOSFET's under hotcarrier stress

By operating one channel of a typical SOI MOSFET in avalanche while keeping the opposite channel accumulated, charge injection into the opposite gate takes place. Three independent experiments are described that demonstrate the occurrence of this opposite-channel based charge injection. The experimental results are in agreement with PISCES numerical simulations