Development of an odd-Z-projectile reaction for heavy element synthesis: 208Pb(64Ni,n)271Ds and 208Pb(65Cu,n)(272)111

Seven 271Ds decay chains were identified in the bombardment of 208Pb targets with 311.5 and 314.3 MeV 64Ni projectiles using the Berkeley Gas-filled Separator. These data, combined with previous results, provide an excitation function for this reaction. From these results, an optimum energy of 321 MeV was estimated for the production of (272)111 in the new reaction 208Pb(65Cu,n). One decay chain was observed, resulting in a cross section of 1.7(+3.9)(-1.4) pb. This experiment confirms the discovery of element 111 by the Darmstadt Group who used the 209Bi(64Ni,n)(272)111 reaction.     

GaAs极化电子源激活的yo-yo过程研究

通过对GaAs晶体产生极化电子束流的实验过程研究,着重对yo-yo过程中不同的实验参数对产生极化束流以及束流稳定情况的影响进行了分析,为获得稳定而持久的极化电流提供了有力的实验支持,并讨论了极化电流强度的可控性. 关键词： GaAs晶体 极化电子束 yo-yo过程 激活     

基于PIα控制的分数阶超混沌Chen系统同步研究

本文提出一种PIα控制器设计方法,实现了分数阶超混沌Chen系统的混沌同步．首先针对分数阶超混沌Chen系统设计了PIα控制器,然后利用改进的双参数Mittag-Leffler函数估计定理和扩展的Gronwall引理证明了系统的稳定性,并指出了使分数阶超混沌Chen系统同步的控制器参数需满足的条件．仿真结果证实了所设计方法的有效性．     

Ionic conductivity study on electron beam irradiated polyacrylonitrile-polyethylene oxide gel

Different mass percent polyacrylonitrile (PAN)-polyethylene oxide (PEO) gels were prepared and irradiated by an electron beam (EB) with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy.The gels were analysed by using Fourier transform infrared spectrum,gel fraction and ionic conductivity (IC) measurement.The results show that the gel is crosslinked by EB irradiation,the crosslinking degree rises with the increasing EB irradiation dose (ID) and the mass percents of both PAN and PEO contribute a lot to the crosslinking;in addition,EB irradiation can promote the IC of PAN-PEO gels.There exists an optimum irradiation dose,at which the IC can increase dramatically.The IC changes of the PAN-PEO gels along with ID are divided into three regions:IC rapidly increasing region,IC decreasing region and IC balanced region.The cause of the change can be ascribed to two aspects,gel capturing electron degree and crosslinking degree.By comparing the IC-ID curves of different mass percents of PAN and PEO in gel,we found that PAN plays a more important role for gel IC promotion than PEO,since addition of PAN in gel causes the IC-ID curve sharper,while addition of PEO in gel causes the curve milder.     

包层模谐振特种光纤及传感特性研究

研究了一种具有双包层结构的包层模谐振特种光纤,该特种光纤具有一个低折射率内包层,基于耦合模原理,纤芯模与包层模之间发生谐振耦合,从而获得具有带阻特性的传输光谱.系统介绍了包层模谐振光纤的制备、传输原理及其弯曲、溶液折射率、折射率/温度双参量等传感特性.实验和理论研究结果表明,包层模谐振特种光纤对于弯曲、溶液折射率参量具...     

Adjustable picosecond pulse duration in a LD end pumped SESAM passively mode-locked Nd:YVO<Subscript>4</Subscript> laser

With adjustable pulse durations, a semiconductor saturable absorber mirror (SESAM) passively mode-locked picosecond Nd:YVO₄ laser was studied. The pulse duration was adjustable from 20 to 80 ps by using intracavity etalons of different thicknesses.     

A study of optical properties of a four-level atomic system via vacuum-induced coherence effects

This paper studies the effects of vacuum-induced coherence(VIC) in a four-level atomic system.The effects of VIC lead to the coherent hole burnings exhibited in the system at some certain points of the Rabi frequency.This is also the reason for the enhancement of the coherent population trapping.In addition,optical bistability occurs in the evolution curves of absorption versus the phase of Rabi frequencies.     

紫外光辐照对TiO2纳米线电输运性能的影响及磁阻效应研究

采用溶胶凝胶法以及静电纺丝法, 利用热处理工艺, 成功制备出了多晶锐钛矿型TiO₂纳米线, 通过两线法在室温下测试单根TiO₂纳米线的V-I曲线来研究其电输运性能及磁阻效应. 结果表明: 在无光照环境下其V-I曲线为不过零点的直线, 零场电阻较大, 在磁场作用下电阻下降, 表现出负磁阻效应; 紫外光辐照环境下TiO₂纳米线载流子浓度增加使得电阻变小, 然而在磁场作用下电阻增大, 表现为正磁阻效应. 紫外光辐照导致的载流子浓度变化, 使得负磁阻转变为正磁阻, 我们将磁阻变化归结为d电子局域导致的负磁阻与能带劈裂导致的正磁阻两种机理相互竞争的结果.     

新型稀磁半导体Mn掺LiCaP的磁电性质

采用基于密度泛函理论的第一性原理平面波超软赝势方法,对纯LiCaP、Mn掺杂LiCaP、Li过量和不足时Mn掺杂LiCaP体系进行几何结构优化,计算并分析了体系的电子结构、能带结构、态密度等.结果表明:Li1±y(Ca1-xMnx) P(x=0. 125,y=0. 125)体系均表现为100%自旋注入,材料均具有半金属亚铁磁性,半金属性稳定,磁矩较大且主要来源于Mn掺入形成的深能级杂质带. Li过量时材料的导电性得到改善,Li不足时体系的居里温度(Tc)提高,说明LiCaP半导体的磁性和电性可以分别通过Mn的掺入和Li的含量进行调控.