Sub-quarter micron silicon integrated circuits and single wafer processing

This paper describes the role of single wafer processing in the development of sub-quarter micron silicon integrated circuits (ICs). The issues related to device processing, choice of materials, performance, reliability, and manufacturing are covered. Single wafer processing based rapid photothermal processing (dominant photons with wavelength less than about 800 nm) is an ideal answer to almost all the thermal processing requirements of current and future Si ICs. For process integration, a new model for process optimization based on minimization of thermal stress is proposed. For breaking the sub-100 nm manufacturing barriers, high throughput lithography based on direct writing is a proposed solution.     

Optimization of Vane-Parameters for Gain-Frequency Response of Vane-Loaded Gyro-TWT

This paper discusses an analytical method to study the effects of the vane-parameters on the gain-frequency response of an azimuthally periodic vane-loaded cylindrical waveguide interaction structure for the gyro-traveling wave tube (gyro-TWT) amplifier in the small-orbit TE₀₁ waveguide mode configuration. The vane-loaded gyro-TWT enables the higher gain than that of the smooth-wall device. An optimum choice of the vane dimensions causes a change in the frequency corresponding to the peak-gain.     

Influence of exciton-exciton interaction with spin paired charge carriers and exciton-lattice interaction on the surface properties of crystalline solids

Applying tight-binding approximation and spin pairing of like charge carriers in a pair of excitons created in a lattice, the possibility of forming a bound exciton-exciton state is studied. It is found that, provided there exists strong exciton-lattice interaction, such a bound state may be formed and its energy may lie within the valence band deforming the material into a crystalline solid with no energy gap. Lowering of the energy is calculated in naphthalene and anthracene crystals where some experimental results are known. The excess energy released after the formation of such bound state can be adequate, depending on the material, to desorb neutral atoms or eject of electrons from surfaces.     

Synchronized whistlers recorded at Varanasi

Some interesting events of synchronized whistlers recorded at low latitude station Varanasi during magnetic storm period of the year 1977 are presented. The dynamic spectrum analysis shows that the component whistlers are Eckersley whistlers having dispersion 10 s^1/2 and 30 s^1/2. An attempt has been made to explain the dynamic spectra using lightning discharge generated from magnetospheric sources     

A fast-settling GaAs-enhanced frequency synthesizer

An indirect, phase-locked-loop (PLL), GaAs-enhanced frequency synthesizer with 700 ns loop settling time has been developed. The two-chip GaAs insertion reduced the size of an existing synthesizer from 90 in³ to only 30 in³. The 6.0 in×5.5 in.×0.9 in module contains a 400 gate GaAs programmable divider and a sample and hold (S/H) which improved the settling time by 77% and reduced the size by 67% over the current state-of-the-art synthesizer. Furthermore, the divider reduced power dissipation by 9.7 W and the S/H reduced power dissipation by 1.3 W     

13C and 1H NMR analysis of the nitration products of 2-amino-4-oxo-(3H)-5-trifluoromethylquinazoline and 2-amino-4-oxo-(3H)-5-fluoroquinazoline

Nitration of 2-amino-4-oxo-(3H)-5-trifluoromethylquinazoline is shown to occur exclusively at C⁶ as determined from an analysis of long range ¹H and ¹⁹F scalar couplings to ring carbons. Nitration of 2-amino-4-oxo-(3H)-5-fluoroquinazoline is found to occur both at C⁶ and C⁸ as evident from an analysis of the ¹⁹F and ¹H couplings of the ring protons.     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

Consequences of structural disorder on laser properties in quantumwire lasers

The effect of interface-roughness-related disorder on the electronic and optoelectronic properties of a quantum wire structure are studied. It is seen that the disorder causes strong localization in the quasi-one-dimensional system. While the electronic states are seriously perturbed, the density of states is not affected drastically. Optoelectronic properties as reflected in the interband transition related phenomenon are not found to suffer significant deterioration as a result of the disorder. However, the results suggest that intraband relaxation processes may be seriously affected because of electron (hole) states being localized in different regions of the wire