Human body detection in wet snowpack by an FM-CW radar

An FM-CW radar system was applied to detect a human body buried in a very wet snowpack. This radar uses the L-band microwave frequency with a maximum output power of 100 mW, and utilizes digital signal processing techniques. Field experiments were carried out to detect and map a human body embedded at a depth of 125 cm in a natural snowpack. The radar is shown to have a potential ability to detect avalanche victims, indicating that it may become a tool for snow rescuer operations     

A convergent approach to the formal total synthesis of hemibrevetoxin B

A convergent synthesis of the key synthetic intermediate of hemibrevetoxin B was achieved via the intramolecular allylation of an α-chloroacetoxy ether and subsequent ring-closing metathesis.     

A new fabrication technology for AlGaAs/GaAs HEMT LSIs using InGaAsnonalloyed ohmic contacts

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L _g=0.9 μm). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5×21.5 μm², one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size     

Recursive Fermion System in Cuntz Algebra. I

Embeddings of the CAR (canonical anticommutation relations) algebra of fermions into the Cuntz algebra ?₂ (or ?_{2 d} more generally) are presented by using recursive constructions. As a typical example, an embedding of CAR onto the U(1)-invariant subalgebra of ?₂ is constructed explicitly. Generalizing this construction to the case of ?_{2 p} , an embedding of CAR onto the U(1)-invariant subalgebra of ?_{2 p} is obtained. Restricting a permutation representation of the Cuntz algebra, we obtain the Fock representation of CAR. We apply the results to embed the algebra of parafermions of order p into ?_{2 p} according to Green's ansatz. Received: 3 September 2001 / Accepted: 19 January 2002     

A software tool to support the reliability design and evaluation oftelecommunication networks

Highly reliable telecommunication networks require new technologies, such as the reliability specification, design, and evaluation method used at NTT. This paper describes the basic concepts of this method, and the ARDES-NET (Availability Reliability Design and Evaluation System for NETworks) software tool is used to support the reliability design and evaluation. ARDESNET has a user-friendly interface and can be easily put into practice     

Transmission and attenuation of the dominant mode in uniformly bentcircular hollow waveguides for the infrared: scalar analysis

A numerical evaluation is conducted of electric field distributions, phase constants, and attenuation constants of the lowest eigenmode in the general class of uniformly bent circular hollow waveguides. The analysis is based on a scalar equation, and numerical results are compared with those of existing approximate theories. Normalized forms of attenuation constants are presented for the parallel and perpendicular polarizations to the bending plane by using structural and material parameters. For sharply bent waveguides, useful and simple expressions are derived for the attenuation constants of the TE and TM modes in the corresponding slab geometry with suitable weighting parameters     

Ultrahigh-speed HEMT LSI technology for supercomputer

The current status of high electron mobility transistor (HEMT) technology at Fujitsu for high-performance VLSI is presented, focusing on device performance in the submicrometer dimensional range and the HEMT LSIs implemented in supercomputer systems. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. A 1.1 K-gate bus-driver logic LSI has been developed to demonstrate the high-speed data transfer in a high-speed parallel processing system at room temperature, operating at 10.92 GFLOPS. A cryogenic 3.3 K-gate random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate the high-clock-rate system operations at liquid-nitrogen temperature. For VLSI level complexity, a HEMT 64-kb static RAM with 1.2-ns access operation and a 45 K-gate gate array with 35-ps logic delay have been developed operating at room temperature, demonstrating the high performance required for future high-speed computer systems     

Reduction of the off-state current of polysilicon thin-filmtransistors by means of a polysilicon buffer layer

The off state current for polysilicon thin-film transistors for pixels in LCDs has been successfully reduced by introducing a polysilicon buffer layer between a polysilicon active layer fabricated by solid-phase-crystallisation (SPC) and a fused quartz substrate. Off-slate current of less than 1 pA under V_gs=-25 V at V_ds=3 V was obtained for n-channel single-gate coplanar transistors using the buffer layer (400 Å)     

Synthesis of aromatic poly(thioether ketone)

Aromatic poly(thioether ketone)s were prepared by the direct polycondensation of aromatic dicarboxylic acids with aryl compounds containing ether or sulfide structures using phosphorus pentoxide/methanesulfonic acid (PPMA) as a condensing agent and solvent. Polycondensation proceeded smoothly and produced aromatic poly(thioether ketone)s with inherent viscosities up to 0.73 dL/g. The synthesis of substituted aryl ketones by the reaction of substituted benzoic acids with aryl compounds in PMMA was studied in detail to demonstrate the feasibility of the reaction for polymer formation. The thermogravimetry of the aromatic poly(thioether ketone)s showed a 10% weight loss in air and nitrogen at around 450 and 460°C, respectively. © 1992 John Wiley & Sons, Inc.     

The synthesis and reaction of N-sulfenyl heterocycles: development of effective sulfenylating reagents

Various N-sulfenyl heterocycles were synthesized by transamination of sulfenamides using a chlorine gas-free method. The N-sulfenyl heterocycles behaved as sulfenylating reagents of anilines; N-sulfenylbenzimidazoles were the most effective.