F(1H-Pyrazol-4-yl)methylene-Hydrazide derivatives: Synthesis and antimicrobial activity

This paper investigates the seismic and collapse performance of shape memory alloy (SMA) braced steel frame structures considering the effects of various brace design parameters and ultimate state of SMAs. An SMA braced steel frame building is designed to have comparable strength and stiffness with a steel-moment resisting frame selected as case study building. Then, the stiffness and ultimate deformation capacity of the SMA braces in the initially designed reference SMA braced frame are systematically varied. First, the static pushover analysis and incremental dynamic analysis (IDA) are employed to illustrate the significance of SMA brace failure consideration in seismic performance assessment of steel frames with SMA elements. Then, the influence of SMA brace initial stiffness and ultimate deformation capacity on the seismic and collapse performance of SMA braced frames are studied through pushover analyses, nonlinear response history analyses, and IDA. The results show that the SMA brace initial stiffness does not affect the interstory drift and floor absolute acceleration response at design and maximum considered earthquake (MCE) level seismic hazard or collapse capacity of the frame. However, it has considerable influence on post-event functionality of the frame. It is also found that the SMA brace ultimate deformation capacity should be at least 80% of maximum inter-story drift demand at MCE level for satisfactory seismic performance, while larger values provide higher collapse capacity for the SMA braced frame.     

Determination of trace amounts of uranium in plutonium oxide by wavelength dispersive X-ray fluorescence spectrometry

Journal of Radioanalytical and Nuclear Chemistry - 149Tb, 152Tb, 155Tb and 161Tb can cover all the modalities of diagnostic and therapeutic purposes of nuclear medicine. The production cross...     

Framing the novel aspects of irreversibilty in MHD flow of Williamson nanomaterial with thermal radiation near stagnation point

Journal of Thermal Analysis and Calorimetry - Here, MHD stagnation point flow of non-Newtonian fluid over a stretchable surface is considered. Process of modeling is characterized for basic...     

Creation of Laser-Induced Long Ionized Channels in Air Suspension

Russian Physics Journal - The paper deals with the propagation of the powerful laser beam in gas-dispersion systems and atmospheric aerosol background, which is accompanied by a wide spectrum of...     

Electrical Conductivity in a Laser Beam Channel

Russian Physics Journal - Electrical conductivity in a laser beam channel has been investigated. Oscillations of the conductivity caused by the oscillation motion of electrons in laser-induced...     

Numerical simulation of unsteady 3D magneto-Sisko fluid flow with nonlinear thermal radiation and homogeneous–heterogeneous chemical reactions

In this paper, we study the qualitative behaviour of satellite systems using bifurcation diagrams, Poincaré section, Lyapunov exponents, dissipation, equilibrium points, Kaplan–Yorke dimension etc. Bifurcation diagrams with respect to the known parameters of satellite systems are analysed. Poincaré sections with different sowing axes of the satellite are drawn. Eigenvalues of Jacobian matrices for the satellite system at different equilibrium points are calculated to justify the unstable regions. Lyapunov exponents are estimated. From these studies, chaos in satellite system has been established. Solution of equations of motion of the satellite system are drawn in the form of three-dimensional, two-dimensional and time series phase portraits. Phase portraits and time series display the chaotic nature of the considered system.     

Characterization of BCN films synthesized by radiofrequency plasma enhanced chemical vapor deposition

Boron carbonitride (BCN) films have been synthesized on Si(1 0 0) substrate by radio frequency plasma enhanced chemical vapor deposition using tris-(dimethylamino)borane (TDMAB) as a precursor. The deposition was performed at the different RF powers of 400-800 W, at the working pressure of 2×10⁻¹ Torr. The formation of the sp²-bonded BCN phase was confirmed by Fourier transform infrared spectroscopy. X-ray photoelectron spectroscopy measurements showed that B atoms were bonded to C and N atoms to form the BCN atomic hybrid configurations with the chemical compositions of B₅₂C₁₂N₃₆ (sample 1; prepared at the RF power of 400 W), B₅₂C₁₀N₃₈ (sample 2; at 500 W) and B₄₆C₁₈N₃₆ (sample 3; at 800 W), respectively. Near-edge X-ray absorption fine structure (NEXAFS) measurements indicated that B atoms were bonded not only to N atoms but also to C atoms to form various configurations of sp²-BCN atomic hybrids. The polarization dependence of NEXAFS suggested that the predominant hybrid configuration of sp²-BCN films oriented in the direction perpendicular to the Si substrate.     

Blue organic light-emitting diodes with low driving voltage and maximum enhanced power efficiency based on buffer layer MoO3

Blue organic light-emitting devices based on wide bandgap host material, 2-(t-butyl)-9, 10-di-(2-naphthyl) anthracene (TBADN), blue fluorescent styrylamine dopant, p-bis(p-N,N-diphenyl-amino-styryl)benzene (DSA-Ph) have been realized by using molybdenum oxide (MoO₃) as a buffer layer and 4,7-diphenyl-1,10-phenanthroline (BPhen) as the ETL. The typical device structure used was glass substrate/ITO/MoO₃ (5 nm)/NPB (30 nm)/[TBADN: DSA-Ph (3 wt%)](35 nm)/BPhen (12 nm)/LiF (0.8 nm)/Al (100 nm). It was found that the MoO₃∥BPhen-based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm², its driving voltage and power efficiency are 5.4 V and 4.7 Lm/W, respectively, which is independently reduced 46%, and improved 74% compared with those the m-MTDATA∥Alq₃ is based on, respectively. The J-V curves of ‘hole-only’ devices reveal that a small hole injection barrier between MoO₃∥NPB leads to a strong hole injection, resulting low driving voltage and high power efficiency. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.