A Recursive Frequency Estimator Using Linear Prediction and a Kalman-Filter-Based Iterative Algorithm

This paper proposes a new Kalman-filter-based recursive frequency estimator for discrete-time multicomponent sinusoidal signals whose frequencies may be time-varying. The frequency estimator is based on the linear prediction approach and it employs the Kalman filter to track the linear prediction coefficients (LPCs) recursively. Frequencies of the sinusoids can then be computed using the estimated LPCs. Due to the coloredness of the linear prediction error, an iterative algorithm is employed to estimate the covariance matrix of the prediction error and the LPCs alternately in the Kalman filter in order to improve the tracking performance. Simulation results show that the proposed Kalman-filter-based iterative frequency estimator can achieve better tracking results than the conventional recursive least-squares-based estimators.     

Line graphs of bipartite graphs with Hamiltonian paths

It is shown that, if t is an integer ≥3 and not equal to 7 or 8, then there is a unique maximal graph having the path P_t as a star complement for the eigenvalue ?2. The maximal graph is the line graph of K_m,m if t = 2m?1, and of K_m,m+1 if t = 2m. This result yields a characterization of L(G ) when G is a (t + 1)‐vertex bipartite graph with a Hamiltonian path. The graphs with star complement P_r ∪ P_s or P_r ∪ C_s for ?2 are also determined. © 2003 Wiley Periodicals, Inc. J Graph Theory 43: 137–149, 2003     

Acoustic waves in random fields

The effect of space- and time-dependent random mass density, velocity, and pressure fields on frequencies and amplitudes of acoustic waves is considered by means of the analytical perturbative method. The analytical results, which are valid for weak fluctuations and long wavelength sound waves, reveal frequency and amplitude alteration, the effect of which depends on the type of random field. In particular, the effect of a random mass density field is to increase wave frequencies. Space-dependent random velocity and pressure fields reduce wave frequencies. While space-dependent random fields attenuate wave amplitudes, their time-dependent counterparts lead to wave amplification. In another example, sound waves that are trapped in the vertical direction but are free to propagate horizontally are affected by a space-dependent random mass density field. This effect depends on the direction along which the field is varying. A random field, which varies along the horizontal direction, does not couple vertically standing modes but increases their frequencies and attenuates amplitudes. These modes are coupled by a random field which depends on the vertical coordinate, but the dispersion relation remains the same as in the case of the deterministic medium.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

Noise–Power Optimization of Incremental Data Converters

Incremental data converters (IDCs) are useful in instrumentation and measurement applications, where low-frequency analog signals need to be converted into digital form with high accuracy and low power dissipation. They are particularly well suited for applications where a single analog-digital converter is multiplexed between many channels. This paper proposes an exact design methodology for IDCs, which optimizes the signal-to-noise ratio of the converter under practical design constraints. The process also allows the designer to apportion the noise budget in an arbitrary manner between thermal and quantization noise. The design process is illustrated by an example which describes the optimization of a third-order multiplexed IDC.     

Efficient digitization of compound analog signals

The problems related to digitization of sonar compound analog sounding signals reflected from a target are considered. With the use of mathematical simulation, it is shown that, in the case of the most efficient Kotel’nikov digitization, errors occur that impede correct correlation signal processing. This difficulty can be overcome via a reduction of the sampling interval by a factor of 2 to 4 relative to the interval proposed by Kotel’nikov.     

Bistable amphoteric centers in semiconductors

It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U ^? centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Distributed Transmit Antenna Selection (DTAS) Under Performance or Energy Consumption Constraints

Motivated by the transmit antenna selection (TAS) concept, used in Multiple-Input-Multiple-Output systems, we argue for distributed transmit antenna selection (DTAS), which corresponds to a method of selecting a subset of available relays in cooperative diversity systems. Assuming amplify and forward relays, the proposed selection method represents a low-complexity tool for determining the optimum relaying set. Two optimization problems are studied: the error probability minimization subject to total energy consumption constraints, and the dual one, the total energy consumption minimization under error performance constraints. Numerical examples verify the advantage of the proposed method in adapting the number of relaying terminals to the desired performance-consumption tradeoff.