Charged Black Holes and Multidimensional Gravity

A multidimensional generalization of the Reissner-Nordström solution of general relativity is obtained for the case of n Ricci-flat internal spaces. A two-parameter family of black-hole solutions for an arbitrary dimensionality D is selected. Nontrivial black holes with D > 4 are shown to exist only with a nonzero electric charge. Observational consequences are discussed, in particular, a violation of Coulomb's law.     

Temperature dependence of corundum roentgenoluminescence and thermoluminescence

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 3, pp. 438–444, March, 1991.     

Investigation of the structure of a melt and molecular dynamics of ortho- and pyrophosphates by Raman spectroscopy

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 535–540, October, 1991.     

A study of three techniques used in the diffraction analysis ofshaped dual-reflector antennas

An examination is presented of three techniques used for the efficient computation of fields diffracted by a subreflector that has been shaped by geometrical optics synthesis. It is found that these techniques, which are based on the geometrical theory of diffraction (GTD), produce errors in the computed fields that are specific to shaped reflectors. These errors are examined for a reflector system shaped to produce maximum gain from a tapered feed illumination. The discrepancies are directly related to the caustic being located near an observation point of the GTD calculations. The errors found are localized, and they increase in magnitude as the caustic approaches the main reflector. In a general offset geometry, the location of the caustic may be located arbitrarily close to the main reflector given a prescribed output aperture distribution. For the specific case considered here-the common situation of shaping to produce maximum gain-the caustic is located near the edge of the main reflector and on the reflection shadow boundary. A local correction is derived which creates a uniform solution through the caustic and across the reflection shadow boundary. Away from this point the calculation recedes to the standard GTD solution     

Electromagnetic scattering by a straight thin wire

The traveling-wave energy, which multiply diffracts on a straight thin wire, is represented as a sum of terms, each with a distinct physical meaning, that can be individually examined in the time domain. Expressions for each scattering mechanism on a straight thin wire are cast in the form of four basic electromagnetic wave concepts: diffraction, attachment, launch, and reflection. Using the basic mechanisms from P.Ya. Ufimtsev (1962), each of the scattering mechanisms is included into the total scattered field for the straight thin wire. Scattering as a function of angle and frequency is then compared to the moment-method solution. These analytic expressions are then extended to a lossy wire with a simple approximate modification using the propagation velocity on the wire as derived from the Sommerfeld wave on a straight lossy wire. Both the perfectly conducting and lossy wire solutions are compared to moment-method results, and excellent agreement is found. As is common with asymptotic solutions, when the electrical length of wire is smaller than 0.2 λ the results lose accuracy. The expressions modified to approximate the scattering for the lossy thin wire yield excellent agreement even for lossy wires where the wire radius is on the order of skin depth     

Influence of Azimuthal Structure of Surface Waves on Efficiency of their Excitation by Tubular Electron Beams

The excitation of eigen surface waves by tubular electron beams in cylindrical discharge devices is studied. The influence of the wave‐field azimuthal structure on the excitation efficiency and nonlinear stage of the plasmabeam instability is investigated both numerically and analytically. Analytical expressions for the saturation amplitude and excitation efficiency of the wave under study are derived. They are found to agree well with results obtained by numerical modelling of the plasma‐beam interaction presented in this paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Method of lines with boundary elements for 1‐D transient diffusion‐reaction problems

Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Study of hydrogen diffusion in boron/germanium codoped optical fiber

Presents a novel technique for studying the dynamics of hydrogen diffusion in optical fiber. It shows that the hydrogen contributes directly to the effective refractive index of the fiber by its dielectric susceptibility. It provides a simple theory that relates the refractive index change to the total hydrogen concentration in the fiber core. It also deduces that there is a small contribution of less than 5% to the refractive index through the photoelastic effect. A low-finesse fiber Bragg grating Fabry-Perot interferometer allows the determination of the evolution of the hydrogen concentration in situ. The experimental results obtained for isothermal and isobaric diffusion between 45/spl deg/C and 90/spl deg/C yielded values for the parameters of Arrhenius-type expressions for the diffusivity, permeability, and solubility of hydrogen in germanium/boron codoped single-mode fiber. In addition, least squares curve-fits for outdiffusion yielded the gas-phase mass-transfer coefficient as a function of temperature.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs