Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation

We develop a Monte Carlo (MC) tool incorporated with the three-subband approximation model to investigate the in-plane spin-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersubband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-subband approximation model, the spin dephasing length is reduced four times under 0.125\,kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subband approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spin-dependent transport of GaAs 2-dimensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a certain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin--orbit interaction.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.     

混沌背景中微弱信号检测的神经网络方法

基于复杂非线性系统相空间重构理论，提出了混沌背景中微弱信号检测的神经网络方法，利用神经网络强大的学习和非线性处理能力，建立了混沌背景噪声的一步预测模型，从预测误差中检测淹没在混沌背景噪声中的微弱目标信号(包括周期信号和瞬态信号)，研究了混沌背景中存在白噪声时该方法的检测能力，指出了目标信号为瞬态信号和周期信号时检测原理的异同点，最后以Lorenz系统作为混沌背景噪声进行了仿真实验，实验表明该方法能有效地将混沌背景中极其微弱的信号检测出来. 关键词： 混沌 神经网络 信号检测     

基于长光程的土壤氧化亚氮排放规律的FTIR光谱法研究

氧化亚氮（N₂O）的过量排放会对臭氧层造成破坏,合理施肥和采取减排措施对减缓温室效应具有重要的现实意义。本文利用FTIR光谱法研究了施肥和水分对白菜地土壤排放N₂O的影响。为了提高系统的灵敏度,我们利用多个反射镜加长了光程。通过比对施肥前后N₂O红外光谱和NIST谱库N₂O红外光谱,最终选取2 160～2 225 cm-1作为定量计算N₂O的特征波段。研究发现,施肥和水分能促进白菜地土壤N₂O气体排放,这为农田N₂O的减排和减缓温室效应提供了理论依据。最后,还研究了施肥后土壤N₂O的昼夜排放规律,结果表明,N₂O白天的排放量高于晚上,通过和前人研究结果对比,验证了此方法的可行性。本文研究证实,基于长光程的FTIR光谱法是一种测量土壤排放N₂O气体规律的快速有效方法,它可以对施肥后的白菜地土壤N₂O气体排放进行测量,相对其他传统测量方法具有高速、简便等优势。     

利用多角度光谱数据探测冬小麦氮素含量垂直分布方法研究

作物氮素具有随植株高度层垂直分布的特性,快速、无损探测作物氮素垂直分布状况,对于指导合理施肥、提高肥料利用率和减少环境污染具有重要意义。本文提出了利用偏最小二乘(partial least square,PLS)算法,运用多角度光谱数据估计冬小麦氮素含量垂直分布的方法。分别选用前向和后向不同观测角度组合形成的光谱数据组建植被指数,建立不同高度层的叶片氮素含量探测模型,其中选用±50°和±60°的组合,建立了冬小麦上层叶位叶片氮密度反演模型;选用±30°和±40°的组合,建立了中层叶位叶片氮密度反演模型;选用±20°和±30°的组合,建立了下层叶位叶片氮密度反演模型。针对氮素反演容易受到作物背景(土壤、作物残渣)影响的问题,引入R₇₀₀/R₆₇₀比值,改进七种常见的植被指数,利用改进了的植被指数建立了冬小麦上层、中层、下层叶片氮密度垂直分布模型。建模实验结果改进了叶片氮密度上层、中层、下层垂直分布估算结果,验证实验选取建模实验中表现最好的三个植被指数进行进一步研究,结果表明改进后的绿光归一化植被指数(green normalized difference vegetation index,GNDVI)在反演上层、中层、下层叶片氮密度时效果最好,达到了极显著的水平,可用于植被氮素含量的垂直分布探测。     

Multi-band circular polarizer based on a twisted triple split-ring resonator

A multi-band circular polarizer using a twisted triple split-ring resonator（TSRR） is presented and studied numerically and experimentally. At four distinct resonant frequencies, the incident linearly polarized wave can be transformed into left/right-handed circularly polarized waves. Numerical simulation results show that a y-polarized wave can be converted into a right-handed circularly polarized wave at 5.738 GHz and 9.218 GHz, while a left-handed circularly polarized wave is produced at 7.292 GHz and 10.118 GHz. The experimental results are in agreement with the numerical results. The surface current distributions are investigated to illustrate the polarization transformation mechanism. Furthermore, the influences of the structure parameters of the circular polarizer on transmission spectra are discussed as well.     

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.     

Cu1-xZnxIr2S4系统的超导电性

具有常式尖晶石结构的CuIr2S4在约为230K时经历金属-绝缘体一级相变.研究发现,用Zn替代Cu时,系统的基态由绝缘体转变为超导体.本文概述了Cu1-xZnxIr2S4系统的超导参量以及压力效应的实验研究,结果表明该超导体系符合基于电-声作用的BCS超导理论.压力导致的超导体-半导体转变显示出超导Cooper对与小双极化子的竞争,暗示系统具有较强的电-声耦合.     

混沌海杂波背景下的微弱信号检测混合算法

基于经验模态分解理论, 提出了一种基于粒子群算法的支持向量机预测方法. 采用总体平均经验模式分解法将混沌信号分解为若干固有模态函数和趋势分量, 将复杂的非线性信号转化为具有不同尺度特征的平稳分量. 利用粒子群算法对支持向量机的惩罚系数和核函数进行优化, 结合支持向量机建立混沌序列的单步预测模型. 从预测误差中检测淹没在混沌背景中的微弱信号(包括瞬态信号和周期信号). 对Lorenz系统和实测IPIX雷达数据进行仿真实验, 结果表明, 该方法能够有效地从混沌背景噪声中检测出微弱目标信号, Lorenz系统得到的均方根误差0.000000339 (-102.8225 dB时)比传统支持向量机方法的均方根误差0.049 (-54.60 dB时)降低了5个数量级, 从海杂波中检测出具有谐波特性的微弱信号, 表明预测模型具有更低的门限和误差.