全反射非稳腔调准和气动窗口输出光路调整技术

本文阐述全反射非稳腔调腔和气动窗口输出光路调整的仪器和步骤。     

P型金刚石半导体的新稳定制造技术

金刚石不但作为宝右,而且利用它的硬度还有各种各样的用途。在电子学领域中正使用金刚石作为避免激光二极管过热的热沉。但构成金刚石的碳属于Ⅳ族,虽然与同族的硅和锗同样也可由价电子结合形成结晶,但现在基本上还没有使用它来作为制造电子器件的半导体材料。主要原因在于向金刚石内掺入受主或施主杂质原子的方法还没有确立。     

Effects of preparation parameters on growth and properties of β-Ga2O3 film

The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor.     

光化学的初级过程和次级过程

针对物理化学教材中有关光化学初级过程和次级过程、初级过程的量子产率、初级过程的反应速率表示以及是否是零级反应等问题发表了看法。     

基于 Markov 模型的分布式队列稳定频谱接入算法

针对认知无线电系统中次级用户队列稳定性问题,通过建立发送状态马尔科夫(Markov)模型,提出了一种基于CSMA的自适应分布式频谱接入算法。次级用户根据感知结果自适应地调整退避时长参数,使稳态服务速率逐渐趋近到达速率,最终达到队列稳定。此外,还在满足对主用户碰撞限制的条件下,推导了次级用户的吞吐量上界,并证明当次级用户的数据到达速率小于此上界时,能够通过所提算法保证队列稳定。仿真结果证明了算法的有效性。     

一种用于PLC系统的多码率RS码译码器

电力线通信(Power Line Communication,PLC)凭借以电力线为通信介质,成为最具优势的通信方式.针对PLC系统中RS码多码率的问题,基于RiBM算法和uiBM算法,设计一种适合PLC系统的多码率RS码译码器.该译码器复杂度低,资源使用量少,易于VLSI实现.该译码器已在一款PLC芯片上得到应用.     

面向亚阈值的脉冲生成电路设计

基于SMIC 130nm工艺,提出了一种新的面向亚阈值的脉冲生成电路.设计中采用三输入与非门作为延时单元,更好地平衡单元的上拉延时和下拉延时,提高了延时路径的稳定性.新结构脉冲生成电路功能不受工艺偏差和温度变化的影响,在0.3V工作电压,不同工艺角以及-40~125℃温度范围内都能生成稳定可靠的脉冲信号.     

一种可重新配置分辨率的全数字可综合的延迟型LINC发射机基带

The linear amplification with nonlinear component transmitter is a promising solution to high efficiency and high linearity amplification for non-constant envelope signals.An all-digital synthesizable baseband for a delay-based LINC transmitter is implemented.This paper proposes a standard-cell based synthesizable methodology which can be applied in the ASIC process efficiently without performance degradation compared to the manual layout.A scheme to overcome the limited resolution of conventional phase detectors is proposed.It employs alternative phase detector structures to provide reconfigurability for higher resolution after fabricating,resulting in an11 ps resolution improvement.Due to the PVT variation,an adaptive calibration scheme focusing on the inherent imbalance between two delay lines is depicted,which reveals an effective EVM enhancement of 5.37 d B.This baseband chip is implemented in 0.13 m CMOS technology,and the transmitter with the baseband has an EVM of –28.96 d B and an ACPR of –29.51 d B,meeting the design requirement.     

1，3-二甲基尿嘧啶二聚体的飞行时间质谱裂解规律研究

采用不同进样方式、不同电子轰击能量和不同反应气压力测定了1,3 二甲基尿嘧啶二聚体(DMUD) 的4个立体异构体A、B、C、D的化学电离(CI)和电子轰击电离(EI)飞行时间质谱.不同方式所测得的CI谱结 果一致,4个异构体出现了强度不同的准分子离子峰(m/z=281),由此推断它们结构之间的相对稳定性次序为: B(trans syn)>D(cis syn)>A(trans anti)>C(cis anti).这一结论被低能量(25eV)电子轰击的EI谱所证实, 并且与合成产物的比例相吻合.EI谱用任何方式测谱均不出现分子离子峰(m/z=280),而出现其单体离子(m/z =140)且为基峰。给出了DMUD的飞行时间质谱裂解途径,同时对CI谱的裂解碎片进行了细致的讨论.     

空间应用的低温工质

介绍了低温流体在低温低压近临界区以及稀薄状态下的特殊性质,并详细介绍了几种低温工质的特点以及它们在空间技术中的应用。