开发LSI DAC新品的技术综述

综述了应用集成运放构成大规模集成电路（LSI）数－模转换器（DAC）的一些关键性技术,并提出了改善DAC性能－价格比的技术措施。     

以岗位素质为主导的电力人才梯队建设创新与实践

辽阳供电公司在原有人才培养选拔机制的基础上进行完善和创新,提出“以岗位素质为主导的人才梯队建设。新举措。通过广泛征求意见,对岗位素质进行提炼,并结合公司实际,出台一系列管理办法,制作出了切合实际的“三级人才”素质模型,在此基础上,进行有针对性的培训和严格的筛选、审查,最终建成了“三级人才”储备库,形成了科学合理的人才梯队,有效避免了人才“断层”现象发生,为公司可持续发展提供了坚实的人力资源保障。     

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.     

ULTRAHIGH DATA DENSITY STORAGE WITH SCANNING TUNNELING MICROSCOPY

Ultrahigh density data storage devices made by scanning probe techniques based on various recording media and their corresponding recording mechanisms, have attracted much attention recently, since they ensure a high data density in a non-volatile, erasable form in some kinds of ways. It is of particular interest to employ organic polymers with novel functional properties within a single molecule (or a single molecular complex) for fabricating electronic devices on a single molecular scale. Here, it is reported that a new process for ultrahigh density and erasable data storage, namely, molecular bistability on an organic charge transfer complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA) switched by a scanning tunneling microscope (STM). Data density exceeds 10¹³ bits/cm² with a writing time per bit of ～1μs. Current-voltage (I/V) measurements before and after the voltage pulse from the STM tip, together with optical absorption spectroscopy and macroscopic four-probe I/V measurements demonstrate that the writing mechanism is conductance transition in the organic complex. This mechanism offers an attractive combination of ultrahigh data density coupled with high speed. The ultimate bit density achievable appears to be limited only by the size of the organic complex, which is less than 1nm in our case, corresponding to 10¹⁴ bits/cm². We believe that provided the lifetime can be improved, molecular bistability may represent a practical route for ultrahigh density data storage devices.     

TCTA在外电场下的双分子发光现象

制备了三苯胺化合物4,4′,4″-三(咔唑-9-基)三苯胺(TCTA)的单层器件ITO/MoO₃/TCTA/LiF/Al和TCTA/TPBi双层异质结器件ITO/NPB/TCTA/TPBi/Bphen/LiF/Al,研究了TCTA的双分子发光现象。通过测试器件的光电性能和薄膜的稳态光谱,得出以下结论:(1)单层器件的电致发光光谱有425 nm和600 nm两个发光峰。与TCTA薄膜的光致发光光谱对比,可知425 nm附近的蓝色发光峰来源于TCTA单体发光,而600 nm附近的橙色发光应为TCTA二聚体electromer的发光。蓝色和橙色发光混合,使单层器件发光颜色表现为白色,对应色坐标为(0.381,0.343)。(2)TCTA/TPBi双层异质结器件的电致发光光谱为440 nm的单峰,器件的最大发光亮度为930 cd/m²,发光性能明显优于单层器件。结合薄膜TCTA、TPBi和TCTA/TPBi的光致发光光谱和紫外-可见光吸收光谱,可知双层器件的发光来自TCTA⁺TPBi^-电致激基复合物。双层器...     

新型稀磁半导体Fe掺杂LiZnP的光电性质

采用基于密度泛函理论的第一性原理计算法研究了新型稀磁半导体Li_(1±)_y(Zn_(1-)_xFe_x)P (x=0, 0.0625;y=0, 0.0625)的电子结构、磁性及光学性质.结果表明,Fe的掺入使体系产生自旋极化杂质带,Fe的3d态与Li2s态,Zn4s态以及P3p态的态密度峰在费米能级处出现重叠,产生sp-d轨道杂化,此时体系净磁矩最大,材料表现出金属性,导电性增强.当Li空位时,导电性减弱,但杂质带宽度最大,居里温度最高.而Li填隙时,体系形成能最低,材料变为半金属性,表现为100%自旋注入,表明掺杂体系的磁性和电性可以分别通过Fe的掺入和Li的含量进行调控.对比光学性质发现,Li空位时,在介电函数虚部和复折射率函数的低能区出现新峰,扩大了对低频电磁波的吸收范围.能量损失函数表明掺杂体系具有明显的蓝移效应,且Li填隙时有更强的等离子共振频率.     

托卡马克中的超高真空技术

赵高真空技术对于现代托卡马克的设计运行、升级和氘－氚验证实验都起着举足轻重的作用,它对先进高密度偏滤器和下一代托卡马克工程堆也有很大的影响。同时,聚变研究的许多新概念也促使了高真空技术的革新。三十五年来,等离子体密度、杂质和壁条件的控制与真空检漏、烘烤去气、放电清洗、壁处理、氢（氘、氚）的捕获、释放和再循环、壁腐蚀和再沉积等密切地联系在一起;高性能的真空室、耐烘烤和振动的超高真空密封、先进的面向等离子体组件、有效的壁处理方法、大抽速泵组等的研制成果为控制等离子体与壁的相互作用、改善聚变三乘积（niTiτE)和验证托卡马克聚变能的科学可行性作出了重大贡献。     

Composition-Controlled Low Field Magnetostriction of TbFe Amorphous Films

Amorphous TbFe films are fabricated by dc magnetron sputtering, and their magnetostrictions at low field are examined over a wide range of terbium content （from 32at.% to 70at.%）. It is found that the terbium content plays an important role in the magnetic and magnetostrictive properties of TbFe films. TbFe film soft magnetic properties and low field magnetostriction can be efficiently improved by controlling the terbium at an optimum content. The magnetostriction at lower magnetic field is increased with the increase of terbium content up to 48.2at.%. After reaching the maximum value, further increase of terbium content would result in a great decrease of the low field magnetostriction. By contrast, at higher magnetic field, the magnetostriction is decreased monotonically with the increase of the terbium content.     

钙钛矿锰氧化物La0.7Sr0.3MxMn1-xO3(M=Cr,Fe)的巨磁电阻效应与磁性

研究了溶胶 -凝胶法制备氧化物巨磁电阻材料的工艺 ,制备了La0 .7Sr0 .3 CrxMn1-xO3 (x =0 ,0 .10 ,0 .15 )和La0 .7Sr0 .3 FexMn1-xO3 (x =0 .0 5 ,0 .10 ,0 .16 )两系列的单相钙钛矿锰氧化物多晶样品 ,并研究了Cr ,Fe替代La0 .7Sr0 .3 MnO3 中部分Mn后对其结构、磁性和巨磁电阻性质的影响 .观察到La0 .7Sr0 .3 Cr0 .15Mn0 .85O3 和La0 .7Sr0 .3 Fe0 .0 5Mn0 .95O3 两个样品的电阻 温度曲线都出现了双峰 .定性讨论了可能产生双峰的机制 .随Cr(或Fe)替代量的增加 ,材料的居里温度很快下降 ,铁磁性减弱 ,导电性降低 ,巨磁电阻效应增强 .但与Fe掺杂相比 ,相同数量的Cr掺杂对材料的影响要小 .     

有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储

采用扫描隧道显微镜(STM)在3-phenyl-1-ureidonitrile(PUN)有机单体薄膜上进行了超高密度信息存储的研究.通过在STM针尖和高定向裂解石墨(HOPG)衬底之间施加一系列的电压脉冲,在薄膜上写入了一个稳定的5×6信息点阵,信息点的大小是0.8nm.电流电压(I-V)曲线表明,施加电压脉冲前后薄膜的导电性质发生了变化.信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合,从而导致薄膜由高电阻态向低电阻态转变. 关键词： 超高密度信息存储 有机薄膜 扫描隧道显微镜(STM)