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随着微电子技术节点不断向前推进,非挥发性存储器(NVM)的容量迅速增大,对读取速度的要求也日益提高。通常,在大规模快闪存储器中采用页读取模式将多个比特的数据同时读取到缓存中,再从缓存中依次输出数据。这样等效于缩短读取周期,但也会遇到瞬态功耗过大的问题。作为改进措施,提出一种新型电流型灵敏放大器的预充方法,在传统灵敏放大器的基础上,采取多相位预充的方法,分时段对位线进行预充电,将瞬态大电流平均到整个预充周期,从而在保证低功耗的同时加大页读取的容量,提高读取速度。经验证,采用该方法的灵敏放大器具有较快的读取速度、较低的功耗,在3.3V工作电压下,电路的读取时间为7ns。 相似文献
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Performance and reliability of a 2 transistor Si nanocrystal nonvolatile memory(NVM) are investigated. A good performance of the memory cell has been achieved,including a fast program/erase(P/E) speed under low voltages,an excellent data retention(maintaining for 10 years) and good endurance with a less threshold voltage shift of less than 10%after 10~4 P/E cycles.The data show that the device has strong potential for future embedded NVM applications. 相似文献
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数据保持力是NAND闪存重要的可靠性指标,本文基于用户在使用模式下,通过设计测试方法,研究了电荷捕获型3D NAND闪存初始阈值电压-2V至3V的范围内数据保持力特性.结果表明初始状态为编程态时,可以有效降低NAND闪存高温数据保留后的误码率,特别是随着擦写次数的增加,不同初始状态下电荷捕获型3D NAND闪存数据保持力差异更加明显,结论表明闪存最适宜存放的状态为0-1V,电荷捕获型3D NAND闪存器件应避免长期处于深擦除状态.并基于不同初始状态闪存高温数据保留后的数据保持力特性不同的现象进行了建模和演示,通过设计实验验证,机理解释模型符合实验结果.该研究可为电荷捕获型3D NAND闪存器件的长期存放状态提供理论参考. 相似文献
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For 3D vertical NAND flash memory, the charge pump output load is much larger than that of the planar NAND, resulting in the performance degradation of the conventional Dickson charge pump. Therefore, a novel all PMOS charge pump with high voltage boosting efficiency, large driving capability and high power efficiency for 3D V-NAND has been proposed. In this circuit, the Pelliconi structure is used to enhance the driving capability, two auxiliary substrate bias PMOS transistors are added to mitigate the body effect, and the degradation of the output voltage and boost efficiency caused by the threshold voltage drop is eliminated by dynamic gate control structure. Simulated results show that the proposed charge pump circuit can achieve the maximum boost efficiency of 86% and power efficiency of 50%. The output voltage of the proposed 9 stages charge pump can exceed 2 V under 2 MHz clock frequency in 2X nm 3D V-NAND technology. Our results provide guidance for the peripheral circuit design of high density 3D V-NAND integration. 相似文献
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Charge Loss Characteristics of Different Al Contents in a HfA10 Trapping Layer Investigated by Variable Temperature Kelvin Probe Force Microscopy 下载免费PDF全文
Kelvin probe force microscopy (KFM) technology is applied to investigate the charge storage and loss characteristics of the HfAlO charge trapping layer with various AI contents. The experimental results demonstrate that with the increase of AI contents in the HfAIO trapping layer, trap density significantly increases. Improvement of data retention characteristic is also observed. Comparing the vertical charge loss and lateral charge spreading of the HfAIO trapping layers, the former plays a major role in the charge loss mechanism. Variable temperature KFM measurement results show that the extracted effective electron trap energy level increases with increasing AI contents in HfAIO trapping layer, which is in accordance with the charge loss characteristics. 相似文献
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