排序方式: 共有64条查询结果,搜索用时 383 毫秒
41.
We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11■2)-plane.The calculations are performed by the k · p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction.The results show that the transition energies decrease with the biaxial strains changing from 0.5% to 0.5%.For films of (11■2)-plane,the strains are expected to be anisotropic in the growth plane.Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property.The strain can also result in optical polarisation switching phenomena.Finally,we discuss the applications of these properties to the (11■2) plane GaN-based light-emitting diode and lase diode. 相似文献
42.
With ZnO nanorods doped in only one poly(vinyl alcohol)(PVA) layer,we observed different threshold voltages with reverse DC voltages for a liquid crystal cell.The length and diameter of the ZnO nanorod used in our experiment were about 180 nm and 20 nm,respectively.When the PVA layer on the anodic side was doped, the threshold voltage was larger than that of the pure cell;conversely,when the PVA layer on the cathodic side was doped,the threshold voltage was smaller than that of the pure cell.These results can be explained by the internal electric field model.We also observed a resonance phenomenon with a low frequency AC voltage. 相似文献
43.
A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AIGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2-7μm has been obtained with peaks at 3.1, 4.8 and 5.7μm. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP, The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure. 相似文献
44.
We investigate the uniaxial strain effect in the e-plane on optical properties of wurtzite GaN based on k.p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the kx - ky plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the efficient improvement of GaN-based laser performance. 相似文献
45.
46.
用高能离子注入(160keV)的方法对InAs/GaAs量子点结构进行掺杂,研究了不同退火工艺处理后量子点的光致发光和电学性能.相对于长时间退火,快速退火处理后的量子点发光通常较强.在相同的退火条件下,量子点发光峰位随着Mn注入剂量的增加,先是往高能量端快速移动,而后发光峰又往低能方向移动.后者可能是由于Mn原子进入InAs量子点,释放了InAs量子点中的应变所致.对于高注入剂量样品和长时间退火样品,变温电阻曲线在40 K附近会出现反常行为.
关键词:
离子注入
InAs/GaAs量子点
光致发光
团簇 相似文献
47.
Compared to conjugated polymer poly[2-methoxy-5-(3' ,7'-dimethyloctyloxy)-l,4-phenylenevinylene] (MDMO-PPV) solar cells, bulk heterojunction solar cells composed of zinc oxide (ZnO) nanocrystals and MDMO-PPV have a better energy conversion efficiency. However, ultraviolet (UV) light deteriorates the performance of solar cells composed of ZnO and MDMO-PPV. We propose a model to explain the effect of UV illumination on these ZnO:MDMO-PPV solar cells. According to this model, the degradation from UV illumination is due to a decrease of exciton dissociation efficiency. Our model is based on the experimentM results such as the measurements of current density versus voltage, photoluminescence, and photocurrent. 相似文献
48.
Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
The mode splitting induced by electro-optic birefringence in a P-I-N InGaAs/GaAs/A1GaAs vertical-cavity surface- emitting laser (VCSEL) has been studied by polarized electroluminescence (EL) at room temperature. The polarized EL spectra with E||[110] and E || [150] directions, are extracted for different injected currents. The mode splitting of the two orthogonal polarized modes for a VCSEL device is determined, and its value increases linearly with the increasing injected current due to electro-optic birefringence; This article demonstrates that the polarized EL is a powerful tool to study the mode splitting and polarization anisotropy of a VCSEL device. 相似文献
49.
50.
利用超晶格解理面方法制备定位生长的InAs量子线.首先以分子束外延技术在OaAs衬底上生长GaAs/AlGaAs超晶格,然后将样品取出外延系统进行解理,对解理面进行预处理之后在(110)解理面上进行二次外延.实验结果显示超晶格解理面的预处理方法对二次外延有重大影响,其中择优腐蚀比自然氧化更有利于量子线的定位生长,过高温度的脱氧除气会导致解理面的GaAs部分出现坑状结构,表明(110)面上的Ga原子容易脱附.同时,Ga原子在(110)面上的迁移长度比较大,原子的择优扩散方向为[001]方向. 相似文献