Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Gate-modulated generation–recombination（GMGR） current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor（n MOSFET） is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients（m and t）. The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.     

Zn(0.6Mn0.2Ni0.2Fe2O4/聚邻甲基苯胺复合物的制备和电磁性能

用化学沉淀法和原位聚合法分别制备了Zn0.6Mn0.2Ni0.2Fe2O4铁氧体纳米粒子和Zn0.6Mn0.2Ni0.2Fe2O4铁氧体/聚邻甲基苯胺复合微粒(ZMNF/POT).通过现代测试技术表征了样品组成、结构、形貌和电-磁性能.结果表明,POT对ZMNF粒子具有较好的包覆作用;复合物电导率与POT的含量成正比,而磁性能与ZMNF粒子的含量相关;在1～15MHz频段内,POT和ZMNF/POT复合物的介电损耗与其电导率表现出一致性;复合物具有可观的磁损耗,比磁介质型ZMNF的大,且ZMNF含量为31.74 wt%的复合物的磁损耗最大,有望作为屏蔽和吸收电磁波材料获得应用.     

应力下LDD nMOSFET栅控产生电流退化特性研究

研究了LDD nMOSFET栅控产生电流在电子和空穴交替应力下的退化特性。电子应力后栅控产生电流减小,相继的空穴注人中和之前的陷落电子而使得产生电流曲线基本恢复到初始状态。进一步发现产生电流峰值在空穴应力对电子应力引发的退化的恢复程度与阈值电压和最大饱和漏电流不同。电子应力中陷落电子位于栅漏交叠区附近的沟道侧I区和LDD侧的II区中氧化层中。GIDL应力中,空穴注入进II区中和了陷落电子,使得产生电流的退化基本得到恢复,但这些空穴并未有效中和I区中的陷落电子,因此阈值电压和最大饱和漏电流退化恢复的程度较小,分别为20%和7%。     

WSI Polycide工艺的研究

文章基于0.5μm CMOS工艺,研究了造成Polycide工艺中WSI剥落、色斑等异常现象的原因。同时,研究了WSI淀积前清洗、退火温度及Cap Layer层对WSI薄膜翘曲度及应力的影响,并通过实验优化,以大量的数据为依据,对影响WSI薄膜特性的工艺参数进行调试和论证,主要考察更改各条件对圆片翘曲度及应力的变化,并通过显微镜镜检圆片表面,获得了0.5μm Polycide工艺较优的工艺条件。实验结果表明,在WSI淀积后增加Cap Layer层工艺对Polycide工艺工期WSI剥落、色斑等异常有较好的改善作用,且圆片表面形貌能达到MOS器件的工艺制造要求。