电力变压器状态维修的研究与实践

电力变压器作为电力系统的主要设备,在保证电力系统的质量和安全上起至关重要的作用。随着时代的发展,状态维修成为变压器维护的主要方式。本文主要研究电力变压器状态维修的内容和诊断以及如何进行状态维修。     

天翼无线网络运行维护探讨

天翼无线网络的基础维护是无线网络构成中极其重要的一个环节,运行维护质量的好坏关系到整个天翼品牌的形象,抓好基础工作,确保设备究好,搞好网络优化,提高服务质量,是无线网络维护的关键所在.     

From pharmacophore to leads: Bioactive compound discovery via computer-aided techniques

Based on the concept of Green Chemistry, a new procedure of finding bioactive compounds and their synthetic routes by computer-aided techniques was proposed. The procedure consists of pharmacophore search against a 3D structural database of natural products for lead discovery and computer-aided synthesis design for avoiding unuseful synthetic experiments. This work demonstrated that computer aided drug design and synthesis design would help us to make the consideration of environmental concerns systematically, rather than having to deal later with the unnecessary waste chemicals. Thus, it is shown that chemical computer-aided design (CAD) is an indispensable part of Green Chemistry.     

WSix复合栅薄膜工艺开发

本文对CVD WSix制造设备及工艺进行了详细的描述,以大量的实验数据为依据,开发出适合本科研生产线WSix复合栅薄膜的工艺标准。     

Degradation of the transconductance of gate-modulated generation current in nMOSFET

The degradation of transconductance (G) of gate-modulated generation current I_GD in LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (Q_L) makes the effective drain voltage minish. Accordingly, the G peak in depletion (G_MD) and that in weak inversion (G_MW) decrease. It is found that Δ G_MD and Δ G_MW each have a linear relationship with the n-th power of stress time (tⁿ) in dual-log coordinate: Δ G_MD ∝ tⁿ, Δ G_MD ∝ tⁿ (n=0.25). During the alternate stress, the injected holes neutralize Q_L induced by the previous EIS. This neutralization makes the effective V_D restore to the initial value and then the I_GD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (Q_C). As a result, G_MW only recovers to the circa 50% of the initial value after the hole-injection-stress (HIS). Instead, G_MD is almost recovered. The relevant mechanisms are given in detail.     

高栅压电子注入损伤对产生电流的影响

用反向GD法研究了高栅压应力下的LDD nMOSFET中的损伤情况.发现这种应力下产生电流峰值随着应力时间的增大变小,峰值变小和氧化层中负陷阱电荷增大的趋势一致.峰值变小是由于应力中氧化层陷阱电子起主导作用,从而减小了漏电压的有效作用,使得产生率最大值变小.应用这种新模型定量得出了影响漏电压的等效电荷密度.     

3D-QSAR Study on Apicidin Inhibit Histone Deacetylase

For Histone Deacetylase (HDAC) Inhibitor, four 3D-QSAR models for four types of different activities, were constructed.The cross-valldated q^2 value of CoMFA Model 1 is 0.624 and the noncross-validated r2 value is 0.939. The cross-validated q^2 value of Model 2 for training set is 0.652 and the noncross-validated r^2 value is 0.963. The cross-validated q^2 value for Model 3 is 0.713, with noncross-validated r^2 value 0.947. The crossvalidated q2 value for Model 4 is 0.566 with noncross-validated r^2 value 0.959. Their predicted abilities were validated by different test sets which did not include in training set. Then the relationship between substituents and activities was analyzed by using these models and the main influence elements in different positions (positions 8 and 14) were found. The polar donor electron group of position 8 could increase the activity of inhibition of HDAC, because it could form chelation with the catalytic Zn. Suitable bulk and positive groups at position 14 are favorable to anti-HDAC activity. These models could web interpret the relationship between inhibition activity and apicidin structure affording us important information for structurebased drug design.     

反溅射再淀积现象的探讨

本文通过对不同条件下双层金属通孔电阻的测试，验证了反溅射再淀积现象的存在，并通过对比实验，分析了影响再淀积的因素和其对电路可靠性的影响。     

把握珠算教育工作的特点 提高珠算教育的整体功能和效果

从八十年代起,我国各类学校的珠算教育工作已进入一个全新的阶段,其特征表现为: (1)指导思想具体明确。从观念上讲,弘扬中华民族精神,培养学生严肃、认真、团结、向上的学习心理品质。从知识与技能上讲,珠算教育以计算运用为目的,以开发智力为目标,提倡珠脑结合,全面提高青少年身心健康。     

Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Gate-modulated generation–recombination（GMGR） current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor（n MOSFET） is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients（m and t）. The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.