用半导体可饱和吸收镜进行LD泵浦Yb∶YAG激光器被动锁模研究

采用不同的半导体可饱和吸收镜,实现了940nm半导体直接泵浦Yb∶YAG激光器被动锁模,得到了输出中心波长分别在1030nm和1050nm,光谱半宽(FWHM)分别为1nm和2nm的稳定锁模脉冲序列,其重复频率分别为190. 24MHz和178. 6MHz 泵浦光为4W时,两种波长的平均输出功率分别为80mW和60mW。     

Flash-lamp-pumped picosecond Nd:YAG regenerative amplifier

A flasli-lamp-pumped Nd:YAG regenerative amplifier has been developed at 1.06 μm, seeded with 10-ps pulses from a diode-end-pumped and mode-locked Nd:YAG oscillator with homemade semiconductor saturable absorber mirror (SESAM). The pulse energy was amplified to 2 mJ by the regenerative amplifier at 10-Hz repetition rate. In two-stages amplifier the regenerative amplified pulse energy was amplified to 100 mJ, and 35-mJ double frequency at 532 nm was obtained by extra-cavity double frequency with a KTP crystal.     

Diode end-pumped 1123-nm Nd:YAG laser with 2.6-W output power

We present a compact and high output power diode end-pumped Nd:YAG laser which operates at the wavelength of 1123 nm. Continuous wave (CW) laser output of 2.6 W was achieved at the incident pump power of 15.9 W, indicating an overall optical-optical conversion efficiency of 16.4%, and the slope efficiency was 18%.     

激光二极管侧面抽运Nd∶YAG锁模激光器的研究

利用谐振腔的稳定条件对激光二极管侧面抽运的 Nd∶YAG锁模直腔的稳区特性和谐振腔内的光斑分布进行了分析。根据对腔参量的分析,选取合适的腔参量设计了一个简单的侧面抽运直腔,该谐振腔腔形简单,没有像散,振荡光模式好,有利于激光器的锁模运转。实验中采用国内自行研制的半导体可饱和吸收镜,实现了激光二极管侧面抽运半导体可饱和吸收镜锁模Nd∶YAG激光器的连续锁模运转,平均输出功率为 2 W,锁模脉冲宽度为10 ps,重复频率为100 MHz。结合实验结果进一步讨论了半导体可饱和吸收镜的一些参量如饱和恢复时间、调制深度等对实现稳定连续锁模的影响。     

Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO_4 and Nd:YAG lasers

Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium.     

半导体激光器端面泵浦Nd:YAG激光器用In0.25Ga0.75As吸收体被动锁模兼做输出镜

用金属有机气相淀积方法生长了一种新型的吸收体--低温InGaAs (LT-In0.25 Ga0.75 As).用这种吸收体兼做输出镜,实现了1.06μm半导体端面泵浦Nd∶YAG激光器被动锁模,脉冲宽度为皮秒量级,重复率为150MHz.     

Diode-pumped 1123-nm Nd:YAG laser

We demonstrated a diode-pumped Nd:YAG laser with a plano-concave resonator. When the pump power is 1.57 W, the output power of 1123-nm laser is 132 mW at the temperature of 20 ℃, and the power change is less than 2% in an hour. A periodically poled LiNbOa (PPLN) was used as outer cavity frequency-doubling crystal and 561-nm laser was observed.     

半导体激光器端面泵浦Nd:YAG激光器用In0.25Ga0.75As吸收体被动锁模兼做输出镜

用金属有机气相淀积方法生长了一种新型的吸收体--低温InGaAs (LT-In0.25 Ga0.75 As).用这种吸收体兼做输出镜,实现了1.06μm半导体端面泵浦Nd∶YAG激光器被动锁模,脉冲宽度为皮秒量级,重复率为150MHz.     

新型光泵浦垂直外腔面发射半导体激光器

用量子阱技术生长的半导体材料作激光增益介质,AlGaAs/GaAs对做布喇格反射镜,并以简单的平凹腔做谐振腔,半导体激光器作泵浦源,制作出了光泵垂直外腔面发射半导体激光器.在抽运功率1.5 W时,得到了中心波长1005 nm、最大输出功率40 mW的激光,光－光转换效率2.7%.