硅片CMP表面微形貌的修正作用研究

The oxidation induced stacking faults （OISFs） exposed on the surface of polished silicon substrate are harmful to the electrical performance and reliability of the device region located on the wafer surface. This work investigates the characteristics of the novel nano colloidal silica alkaline slurry, including polyamine and complex non-ions surface surfactant. The experimental results show that when the pH value is higher than 10.1, the removal rate can be higher than 750 nm/min and the surface roughness can be lower than 0.3 nm （10 × 10 μ2）. The surface OISFs existing on the wafer are efficiently controlled with the slurry, and the defect density on the polished wafer surface decreases greatly as well.     

三种胍盐对低磨料浓度碱性阻挡层抛光液性能的影响

The influence of three kinds of guanidinium salt on the removal rate selectivity of different materials was studied during the barrier chemical mechanical polishing(CMP) process at first.The three kinds of guanidine saltguanidine hydrochloride,guanidine nitrate and guanidine carbonate.Then we compared the effect of the three kinds of guanidine salt on the dishing,erosion and surface roughness value.In the end,the reaction mechanism was studied through electrochemical analysis.All the results indicate that there is a better performance of the slurry with guanidine hydrochloride than the slurries with the other two kinds of guanidine salt.It effectively improved the removal rate selectivity and the surface roughness under the premise of low abrasive concentration and low polishing pressure,which is good for the optimization of the alkaline slurry for the barrier CMP process.     

TiO2 薄膜CMP表面粗糙度的研究

Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.     

镶嵌钨的化学机械抛光的研究

研究的是ＵＬＳＩ镶嵌钨ＣＭＰ的选择性，化学与机械作用匹配，桨料的悬浮及存放和后清洗等问题。     

低k介质与铜互连集成工艺

阐明了低k介质与铜互连集成工艺取代传统铝工艺在集成电路制造中所发挥的关键作用。依照工艺流程,介绍了如何具体实现IC制造多层互连工艺:嵌入式工艺、低k介质与平坦化、铜电镀工艺与平坦化;阐述了工艺应用现况与存在的难题,给出了国际上较先进的解决方法。     

彩色电视机的包装评价及设计

彩色电视接收机包装的评价是彩色电视机评价的一个组成部分。良好的包装能使产品在生产、储运,销售过程中得到很好的保护,是符合国家有关标准、规范的规定的。在商业流通中更具有宣传性和对用户产生诱惑力。     

ULSI硅衬底的化学机械抛光

在分析ULSI中硅衬底CMP的动力学过程基础上,提出了在机械研磨去除产物过程中,适当增强化学作用可显著改善产物的质量传输过程,从而提高抛光效率.在对不同粒径分散度的硅溶胶抛光液进行比较后提出了参与机械研磨的有效粒子数才是机械研磨过程的重要因素,而不是单纯受粒径大小的影响.分析和讨论了CMP工艺中的几个影响因素,如粒径大小与分散度、pH值、温度、流量和浓度等.采用含表面活性剂和螯合剂的清洗液进行抛光后清洗,表面颗粒数优于国际SEMI标准,抛光雾得到了有效控制.     

圓內整点問題

<正> 用R(t)表示圓x~2+y~2=t的內面及圓周上面的整点的数目,很容易証明当t→∞时R(t)～πt,实际上我們有 R(t)=πt+O(t~a),(1)这里a代表某个小于1的数,我們的問題就是去寻求使得(1)式成立的a的下界.到     

超薄硅片贴膜抛光技术研究

伴随着集成电路芯片的不断轻薄化,各种高质量的超薄抛光片衬底需求日益增加.介绍了一种简捷、方便的手动贴膜方法,并将其应用在200μm厚7.6 cm硅单晶免清洗单面抛光片加工过程中,通过与粘蜡抛光相比较,发现贴膜抛光实用性更强、成品率更高且成本更低.     

InSb半导体材料的抛光液研究

InSb薄膜被广泛应用于光电元件、磁阻元件、霍尔元件以及晶体管结构器件之中.研究了一种应用于的抛光液,在一定压力、温度、转速下,以有机碱替代无机碱,通过添加螯合剂、活性剂降低产品表面粗糙度,减少划伤,表面污染小.