Compact Single-Stage Femtosecond Multipass Ti：Sapphire Amplifier at 1 kHz with High Beam Quality

A compact femtosecond Ti：sapphire amplifier system is reported using single-stage multipass configuration with high beam quality. A high dispersion glass stretcher and a pair of double prisms for compression are introduced based on broadband femtosecond seed pulses. The non-grating-based pulse stretcher and compressor are advantageous to increase high beam quality and to reduce the high-order dispersion. A Gaussian filter is used to reduce the gain narrowing effect in amplification. The compact femtosecond Ti：sapphire nine-pass amplifier delivers pulses with a duration of 26 fs and an energy of 800μJ at 7mJ pumping pulses energy at I kHz. The 1-kHz femtosecond amplifier with high beam quality and high stability is very suitable for ultrafast physics research applications, such as attosecond science, ultra-precision micromachining, and THz wave generation.     

600 MHz 150W硅脉冲功率晶体管

６００ＭＨｚ１５０Ｗ硅脉冲功率晶体管王因生，陈正东，张树丹，谭卫东，郑承志，刘六亭，康小虎，周德红，陈统华（南京电子器件研究所，２１００１６）Ａ６００ＭＨｚ１５０ＷＳｉｌｉｃｏｎＢｉｐｏｌａｒＰｕｌｓｅｄＰｏｗｅｒＴｒａｎｓｉｓｔｏｒ￥ＷａｎｇＹｉｎ...     

微波BJT超宽带低噪声放大器的设计

本文给出了一种频带覆盖达１０－１６００ＭＨｚ的微波ＢＪＴ超宽带低噪声放大器的设计方法，从微波ＢＪＴ的噪声模型出发，通过拟合５０Ω源阻抗下微波ＢＪＴ的噪声系数ＮＦ５０和Ｓ参数来提取其噪声参数，然后根据增益，噪声及驻波比要求优化设计放大器，使放大器在超宽带范围内获得平坦增益和低噪声，本文所给出的微波ＢＪＴ惨数提取及放大器优化设计方法已由实验结果所验证。     

电子数据互换 六：EDI系统的安全和性能要求

本文阐述了ＥＤＩ安全保密的威胁和威胁的克服；为保证ＥＤＩ业务的质量，规定了ＥＤＩ系统的性能要求。     

硅片粘合杂质双扩散制造晶闸管

本文介绍硅片粘合杂质双扩散制造晶闸管工艺，结合光刻门极化学挖槽技术，简化制管工序，改善了器件的电性能指标。     

一种用模拟信道进行数字通信的方法

本文介绍了一种利用现有机载模拟通信设备进行数字通信的高性能机载报警系统。文中，着重论述了该系统在编码和解码技术方面，提高报警信号的抗干扰性、保密性、防止误码以及提高传输距离等关键技术；较详细地介绍了系统的工作原理及调制解调电路的特点。