用于微陀螺性能检测的小型、无干扰真空获得系统

本文报道了一种由液氮低温吸附泵、真空计、样品室和真空度控制装置等组成的小型真空获得系统 ,体积仅为 2 8cm× 30 cm× 30 cm。系统可连续提供 1 0 - 2 Pa到几百帕量程的真空环境 ,也可扩散到万帕超宽压强范围 ,十分适合于微陀螺传感器的检测和实验研究。 1 0 - 2 Pa的极限真空环境 ,可保持 2 h以上     

Performance Enhancement of Al Ga N/Ga N MIS-HEMTs Realized via Supercritical Nitridation Technology

This paper proposes a method of repairing interface defects by supercritical nitridation technology,in order to suppress the threshold voltage shift of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors(MIS-HEMTs).We find that supercritical NH₃ fluid has the characteristics of both liquid NH₃ and gaseous NH₃ simultaneously,i.e.,high penetration and high solubility,which penetrate the packaging of MIS-HEMTs.In addition,NH₂^-<...     

一种用于RF MEMS移相器及开关可变电容的复合微桥膜结构

提出了一种基于微机械工艺的新型复合微桥膜结构，由低应力SiN／SiO2(0.5μm／50nm)及Cr／Au(30nm／1μm)构成。相应的工艺流程较为简单。对影响其特性的因素进行了理论分析，并提出了3种桥膜的平面结构；利用静电／力耦合有限元法分析了各种结构的静电驱动特性以及各阶模态，结果得到了令人满意的驱动和机械性能；通过有限元高频仿真软件对桥膜结构与共面波导形成的可调电容结构进行了分析，结果表明其具有良好的射频／微波性能。该桥膜结构适用于RF MEMS开关、移相器及开关式可调电容和滤波器等。     

Novel through-silicon vias for enhanced signal integrity in 3D integrated systems

In this paper, a new type of through-silicon via (TSV) for via-first process namely bare TSV, is proposed and analyzed with the aim of mitigating noise coupling problems in 3D integrated systems for advanced technology nodes. The bare TSVs have no insulation layers, and are divided into two types: bare signal TSVs and bare ground TSVs. First, by solving Poisson''s equation for cylindrical P-N junctions, the bare signal TSVs are shown to be equivalent to conventional signal TSVs according to the simulation results. Then the bare ground TSV is proved to have improved noise-absorption capability when compared with a conventional ground TSV. Also, the proposed bare TSVs offer more advantages to circuits than other noise isolation methods, because the original circuit design, routing and placement can be retained after the application of the bare TSVs.