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Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide 下载免费PDF全文
Atomic-layer-deposited(ALD) aluminum oxide(Al_2O_3) has demonstrated an excellent surface passivation for crystalline silicon(c-Si) surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al_2O_3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al_2O_3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al_2O_3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiN_x cap layer is prepared on Al_2O_3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering. 相似文献
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Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template 下载免费PDF全文
InGaN/GaN epilayers,which are grown on sapphire substrates by the metal-organic chemical-vapour deposition(MOCVD) method,are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks.The formation of nanorod arrays eliminates the tilt of the InGaN(0002) crystallographic plane with respect to its GaN bulk layer.Photoluminescence results show an apparent S-shaped dependence on temperature.The light extraction efficiency and intensity of photoluminescence emission at low temperature of less than 30 K for the nanorod arrays are enhanced by the large surface area,which increases the quenching effect because of the high density of surface states for the temperature above 30 K.Additionally,a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation,which is confirmed by reciprocal space mapping measurements. 相似文献
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Strain relaxation and optical properties of etched In<sub>0.19</sub>Ga<sub>0.81</sub> N nanorod arrays on the GaN template 下载免费PDF全文
InGaN/GaN epilayers,which are grown on sapphire substrates by the metal-organic chemical-vapour deposition(MOCVD) method,are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks.The formation of nanorod arrays eliminates the tilt of the InGaN(0002) crystallographic plane with respect to its GaN bulk layer.Photoluminescence results show an apparent S-shaped dependence on temperature.The light extraction efficiency and intensity of photoluminescence emission at low temperature of less than 30 K for the nanorod arrays are enhanced by the large surface area,which increases the quenching effect because of the high density of surface states for the temperature above 30 K.Additionally,a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation,which is confirmed by reciprocal space mapping measurements. 相似文献
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GaN基半导体在光电子、电子器件已具有重要应用,如何结合其良好的电学特性进行其他应用方面的理论或实验探索,是当前新的研究课题.本文利用SCAPS-1D软件从理论上计算了GaN在FTO/GaN/(FAPbI3)0.85(MAPbBr3)0.15/HTL电池结构中电子传输的理论机制.结果表明,引入GaN后,电池的开路电压,转换效率明显提高.通过进一步分析准费米能级分裂、界面电场、界面复合率、耗尽层厚度等因素的变化规律,分析了GaN的厚度和掺杂浓度对电池开路电压等器件参数的影响,并从GaN作为电子传输层的物理机制方面进行了讨论. 相似文献