Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

High-quality In_0.2Ga_0.8N epilayers were grown on a GaN template at temperatures of 520 and 580℃ via plasma-assisted molecular beam epitaxy. The X-ray rocking curve full widths at half maximum (FWHM) of (10.2) reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature. When the growth temperature increases to 580℃, the FWHM of (00.2) reflections for these samples is very narrow and keeps similar, while significant improvement of (10.2) reflections with an FWHM value of 612 arcsec has been observed. This improved quality in InGaN layers grown at 580℃ is also reflected by the much larger size of the crystalline column from the AFM results, stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.     

Recent progress of colloidal quantum dot based solar cells

Colloidal quantum dot(CQD) solar cells have attracted great interest due to their low cost and superior photo-electric properties. Remarkable improvements in cell performances of both quantum dot sensitized solar cells(QDSCs) and PbX(X = S, Se) based CQD solar cells have been achieved in recent years, and the power conversion efficiencies(PCEs) exceeding 12% were reported so far. In this review, we will focus on the recent progress in CQD solar cells. We firstly summarize the advance of CQD sensitizer materials and the strategies for enhancing carrier collection efficiency in QDSCs, including developing multi-component alloyed CQDs and core-shell structured CQDs, as well as various methods to suppress interfacial carrier recombination. Then, we discuss the device architecture development of PbX CQD based solar cells and surface/interface passivation methods to increase light absorption and carrier extraction efficiencies. Finally, a short summary, challenge, and perspective are given.     

GaNAs基超晶格太阳电池的分子束外延生长与器件特性

采用分子束外延(MBE)生长技术生长了周期厚度不同的1 e V吸收带边的Ga N0.03As0.97/In0.09Ga0.91As应变补偿短周期超晶格(SPSL)。高分辨率X射线衍射(HRXRD)测量结果显示,当周期厚度从6 nm增加到20 nm时,超晶格的结晶质量明显改善。然而,当周期厚度继续增加时,超晶格品质劣化。对超晶格周期良好的样品通过退火优化,获得了具有低温光致发光现象的高含N量Ga NAs/In Ga As超晶格,吸收带边位于1 e V附近。使用10个周期的Ga NAs/In Ga As超晶格(10 nm/10 nm)和Ga As组成的p-i-n太阳电池的短路电流达到10.23 m A/cm2。经聚光测试获得的饱和电流密度、二极管理想因子与由电池暗态电流-电压曲线得到的结果一致。     

立方相GaN的持续光电导

研究了金属有机物化学气相外延(MOVPE)方法生长的非故意掺杂的立方相GaN的持续光电导效应.在六方相GaN中普遍认为持续光电导效应与黄光发射有关,而实验则显示在立方GaN中,持续光电导效应与其中的六方相GaN夹杂有关系,而与黄光发射没有关系.文中提出,立方相GaN与其中的六方相GaN夹杂之间的势垒引起的空间载流子分离是导致持续光电导现象的物理原因.通过建立势垒限制复合模型,解释了立方相GaN的持续光电导现象的物理过程,并对光电导衰减过程的动力学作了分析.对实验数据拟合的结果证明以上的模型和推导是与实验相符的.     

GaN横向外延中晶面倾斜的形成机制

采用双晶X射线衍射(DC-XRD)研究蓝宝石(0001)衬底上横向外延GaN层中晶面倾斜的形成原因. 发现横向生长区的GaN在垂直掩模方向上朝SiN_x掩模层弯曲. 采用选择性腐蚀逐渐去掉SiN_x掩模层, 发现XRD中GaN(0002)w扫描衍射峰两侧存在与晶面倾斜有关的衍射信息. 该衍射信息起初为一个很宽的峰, 随着选择性腐蚀的进行, 会先分裂为两个峰, 最后当SiN_x掩模层全部腐蚀掉后, 其中一个衍射峰会消失, 而只剩下一个很窄的峰. 作者证实造成横向外延GaN 中晶面倾斜的原因有两个: 一是由于GaN与掩模层之间界面应力造成的弹性非均匀应变; 另一个是由于GaN中穿透位错的90°转向造成的塑性形变.     

Effects of growth temperature on high-quality In_(0.2)Ga_(0.8)N layers by plasma-assisted molecular beam epitaxy

正High-quality In_(0.2)Ga_(0.8)N epilayers were grown on a GaN template at temperatures of 520 and 580℃via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum(FWHM) of(10.2) reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580℃,the FWHM of(00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580℃is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.     

柔性衬底上使用等离子增强原子层沉积制备的氮化镓薄膜物性分析

采用等离子增强原子层沉积技术（PE-ALD）在350℃温度下,在KAPTON柔性衬底上直接生长出多晶GaN薄膜。利用低角度掠入射X射线衍射仪、AFM、SEM、TEM、XPS对薄膜的晶体结构、表面形貌及薄膜成分进行了表征和分析。结果表明,薄膜呈多晶态,且具有良好的均匀性;薄膜中的N元素全部以N-Ga键形式存在;大部分Ga元素以Ga-N键形式构成GaN;少量的Ga元素分别以Ga-Ga键和Ga-O键形式构成金属镓以及Ga2O3。研究发现,虽然KAPTON具有较好的耐高温性,但GaN会反向扩散进入KAPTON衬底,形成具有一定厚度的GaN扩散层。     

1 eV吸收带边GaInAs/GaNAs超晶格太阳能电池的阱层设计

使用In, N分离的GaInAs/GaNAs超晶格作为有源区是实现高质量1eV带隙 GaInNAs基太阳能电池的重要方案之一. 为在实验上生长出高质量相应吸收带边的超晶格结构, 本文采用计算超晶格电子态常用的Kronig-Penney模型比较了不同阱层材料选择下, 吸收带边为1 eV的GaInAs/GaNAs超晶格相关参数的对应关系以及超晶格应变状态. 结果表明: GaNAs与GaInAs作为超晶格阱层材料在实现1 eV的吸收带边时具有不同的考虑和要求; 在固定1 eV的吸收带边时, GaNAs材料作为阱层可获得较好的超晶格应变补偿, 将有利于生长高质量且充分吸收的太阳能电池有源区. 关键词： GaInAs/GaNAs超晶格 Kronig-Penney模型 太阳能电池     

InGaN/GaN多量子阱电池的垒层结构优化及其光学特性调控

InGaN基量子阱作为太阳电池器件的有源区时,垒层厚度设计以及实际生长对其光学特性的影响极为重要.采用金属有机化学气相沉积(MOVCD)技术,在蓝宝石衬底上外延生长了垒层厚度较厚的InGaN/GaN多量子阱,使用高分辨X射线衍射和变温光致发光谱研究了垒层厚度对InGaN多量子阱太阳电池结构的界面质量、量子限制效应及其光学特性的影响.较厚垒层的InGaN/GaN多量子阱的周期重复性和界面品质较好,这可能与垒层较薄时对量子阱的生长影响有关.同时,厚垒层InGaN/GaN多量子阱的光致发光光谱峰位随温度升高呈现更为明显的“S”形(红移-蓝移-红移)变化,表现出更强的局域化程度和更高的内量子效率.     

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiN_x mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiN_x mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiN_x mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)—from vertical in the window regions to the lateral in the regions over the mask.