Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．     

集成电路的封装效应和它的建模

前半部分综述高速集成电路的封装效应和它的物理模型，并指出怎样利用时域反射法来测量有关它的参数，如电感、电容、耦合电感和耦合电容值等。后半部分笔者用地质学中使用的分层结构Ｚ－Ｐｒｏｆｉｌｅ算法，使得建模精度有很大提高。由于所用方法仪器简单、测量数据准确。因此是一个很好的科学研究工具，在生产实践中也有实用和经济价值。     

形式化语言在UMTS开发中的应用

由于3G协议规范的复杂性，3GPP方法论指导方针中鼓励使用标准的形式化语言来进行UMTS产品的设计、开发与测试。文中概要性地描述了UMTS的体系结构和在规范描述中用到的一些形式化语言的基本概念和特点，探讨了这些形式化语言在UMTS开发中的应用。使用形式化语言开发UMTS可以简化和改进测试程序，实现新产品与新标准的同步推出。     

一种利用Gabor小波特征的目标跟踪方法

小波特征跟踪是一种新的目标跟踪方法。这种方法利用Gabor小波提取目标的边界特征来组成特征模板,并由小波滤波器系数组成特征向量。在跟踪过程中不断优化特征模板的旋转、尺度及平移等几何变形参数,使得小波特征向量值在最小平方和的意义上与初始值相匹配,从而实现目标旋转、尺度及平移等几何变形时的自动跟踪。实验表明,该方法能够有效地跟踪飞机、车辆等目标,并且能够抵抗全局亮度的变化和局部遮挡的干扰。     

压电振子径厚耦合振动的二维等效电路研究

提出了一种轴向极化压电圆环和圆片的径厚二维耦合等效电路模型。应用这一模型分析了它们的耦合振动,比较了不同尺寸比例下耦合振动与单一模式振动的异同,发现这种方法比一维等效电路方法能在较宽尺寸范围内更准确的分析压电振子的振动问题。有限元计算和试验测量结果验证了这一模型对压电振子频率计算的准确性。     

Interface roughness, surface roughness and soft X-ray reflectivity of Mo/Si multilayers with different layer number

A series of Mo/Si multilayers with the same periodic length and different periodic number were prepared by magnetron sputtering, whose top layers were respectively Mo layer and Si layer. Periodic length and interface roughness of Mo/Si multilayers were determined by small angle X-ray diffraction (SAXRD). Surface roughness change curve of Mo/Si multilayer with increasing layer number was studied by atomic force microscope (AFM). Soft X-ray reflectivity of Mo/Si multilayers was measured in National Synchrotron Radiation Laboratory (NSRL). Theoretical and experimental results show that the soft X-ray reflectivity of Mo/Si multilayer is mainly determined by periodic number and interface roughness, surface roughness has little effect on reflectivity.     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

应用K-K关系测量高掺杂Ⅲ-Ⅴ族化合物半导体的电学参数

基于K-K关系对高掺杂Ⅲ-Ⅴ族化合物半导体N-GaAs和N-InP的反射谱用170SX型FT-IR仪器在50～27500cm~(-1)范围进行了数据处理,求出等离子体频率ω_p、阻尼系数γ、载流子浓度n、迁移率μ、电阻率ρ等重要的电学参数。