Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

重金属污染水体背景下的底质反射率光谱特征及其对离水反射率贡献影响分析

水体重金属遥感反演是水环境遥感领域中的难题,目前仍有相当多的基础性问题有待解决,而浅水区底质对离水反射率贡献规律是将来遥感反演模型精度其中一个重要影响因素,尤其在重金属污染这种特殊的背景下,揭示其贡献规律对提升水体重金属遥感模型精度有重要作用,测量结果对研究重金属尾矿底泥的反射率光谱特征以及区分常见水底底质有参考意义。首先利用光谱仪测量获得广东大宝山尾矿底质反射率,发现其在波长755、 1 280、 1 620和2 200 nm存在反射峰,有明显光谱特征,并与河床常见的粗沙、淤泥和石头三类底质反射率进行了对比分析,结果表明：一方面,粗沙和淤泥反射率呈一缓慢上升的曲线,与存在多个特征反射峰的矿区底泥有明显区别;另一方面,石头反射率则在波长范围550～650 nm出现一个宽而扁平的反射峰后随即在波长675 nm处出现波谷然后增大至波长750 nm后趋于平缓,其特征波长与矿区底泥均不一样。上述特征波长可作为重金属污染背景下底泥光谱的重要区分波段。测量水深为1 cm、 10 cm和深水区的离水反射率,结合水质遥感模型计算出1 cm水深情况下底质反射光、水体散射光,并将其对离水反射率贡献进行讨论...