排序方式: 共有51条查询结果,搜索用时 31 毫秒
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位相调制的实时联全变换相关器 总被引:1,自引:0,他引:1
提出了一种位相调制的实时联合变换相关器,它采用液晶显示屏作为输入器件,用液晶光阀记录和显示联合功率谱。利用液晶显示屏光栅状结构的衍射级,提高光能的利用率,度充分利用液晶光阀的有效使用面积。采用成像透镜放大各衍射级的联合频谱,适应液晶光阀较低的分辩率要求。 相似文献
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Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer 下载免费PDF全文
Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor(MOS) structures with and without a GeO2 passivation layer are investigated.The physical and the electrical properties are characterized by X-ray photoemission spectroscopy,high-resolution transmission electron microscopy,capacitance-voltage(C-V) and current-voltage characteristics.It is demonstrated that wet thermal annealing at relatively higher temperature such as 550℃ can lead to Ge incorporation in HfO2 and the partial crystallization of HfO2,which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO2/Ge MOS capacitors.However,wet thermal annealing at 400℃ can decrease the GeO x interlayer thickness at the HfO2/Ge interface,resulting in a significant reduction of the interface states and a smaller effective oxide thickness,along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient.The pre-growth of a thin GeO2 passivation layer can effectively suppress the interface states and improve the C-V characteristics for the as-prepared HfO2 gated Ge MOS capacitors,but it also dissembles the benefits of wet thermal annealing to a certain extent. 相似文献
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The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm^-1. 相似文献
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采用超高真空化学气相淀积系统,以高纯Si2 H6和GeH4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530'和5.5cm-1,具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm-2可用于制备Si基长波长集成光电探测器和Si基高速电子器件. 相似文献
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使用功率谱相减的实时联合变换相关器作多目标检测 总被引:1,自引:0,他引:1
提出一种使用功率谱相减的实时联合变换相关器作多目标检测。使用这种方法,输入面有两套联合图像。在第二套联合图像中,参考图像是对比度反转的。使用衍射光栅对这两套联合功率谱作相减处理,这种方法可大大抑制输出面的直流项及不想要的伪相关峰,增强相关峰的强度、锐度和峰噪比,提高抗噪声干扰的能力,从而提高对多目标检测的准确度。给出对具有灰度级的多目标输入景物的计算机模拟结果和光学实验结果。实验结果证实了该系统设计及性能分析的正确性。 相似文献
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金属与Ge材料接触时界面处存在着强烈的费米钉扎效应, 尤其与n型Ge形成的欧姆接触的比接触电阻率高, 是制约Si基Ge器件性能的关键因素之一. 本文对比了分别采用金属Al和Ni 与Si衬底上外延生长的p型Ge和n型Ge材料的接触特性. 发现在相同的较高掺杂条件下, NiGe与n型Ge可形成良好的欧姆接触, 其比接触电阻率 较 Al接触降低了一个数量级, 掺P浓度为2×1019 cm-3时达到1.43×10-5 Ω·cm2. NiGe与p型Ge接触和Al接触的比接触电阻率相当, 掺B浓度为4.2×1018 cm-3时达到1.68×10-5 Ω·cm2. NiGe与n型Ge接触和Al电极相比较, 在形成NiGe过程中, P杂质在界面处的偏析是其接触电阻率降低的主要原因. 采用NiGe作为Ge的接触电极在目前是合适的选择.
关键词:
金属与Ge接触性质
NiGe
比接触电阻率 相似文献