排序方式: 共有51条查询结果,搜索用时 15 毫秒
11.
波导层结构设计是制备太赫兹(THz)量子级联激光器的关键问题之一.本文基于德鲁得(Drude)模型,利用时域有限差分(FDTD)法,对Si/SiGe量子级联激光器的波导层进行优化设计,从理论上对传统的递变折射率波导、单面金属波导、双面金属波导以及金属/金属硅化物波导横磁模(TM模)的模式损耗和光场限制因子进行了对比分析.结果表明,金属/金属硅化物波导不但可以减小波导损耗,而且有很高的光学限制因子,同时其工艺也比双面金属波导容易实现,为Si/SiGe太赫兹量子级联激光器波导层的设计提供了一定的理论指导. 相似文献
12.
利用超高真空化学气相淀积系统, 基于低温缓冲层和插入应变超晶格的方法, 在Si(100)衬底上外延出厚度约为880 nm的纯Ge层. 采用X射线双晶衍射、高分辨透射电镜、原子力显微镜和光致发光谱分别表征了其结构及光学性质. 测试结果显示外延Ge的X射线双晶衍射曲线半高宽为273", 表面均方根粗糙度为0.24 nm, 位错密度约为1.5×106 cm2. 在室温下观测到外延Ge的直接带跃迁光致发光, 发光峰值位于1540 nm. 表明生长的Si基Ge材料具有良好的结晶质量, 可望在Si基光电子器件中得到应用. 相似文献
13.
14.
The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is investigated.It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate increases.The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 ×... 相似文献
15.
16.
Ge组分对SiGe HBT直流特性的影响 总被引:1,自引:0,他引:1
制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT)。实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高。Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2.6倍。 相似文献
17.
We prepared germanium-on-insulator(GOI) substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength(2.4 MPa) and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing(CMP) systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality. 相似文献
18.
19.
Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator (SOI) to form SiGe-on- insulator (SGOI) substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process. 相似文献
20.
应变锗材料具有准直接带特性,而且与标准硅工艺兼容,成为实现硅基发光器件重要的候选材料之一.本文基于vandeWalle形变势理论,计算了应变情况下半导体Ge材料的能带结构以及载流子在导带中的分布;通过分析载流子直接带和间接带间的辐射复合以及俄歇复合、位错等引起的非辐射复合的竞争,计算了N型掺杂张应变Ge材料直接带跃迁的内量子效率和光增益等发光性质.结果表明,张应变可有效增强Ge材料直接带隙跃迁发光.在1.5%张应变条件下,N型掺杂Ge的最大内量子效率可以达到74.6%,光增益可以与III-V族材料相比拟. 相似文献