自制电视中的部分小电感

电视机中用的许多电源滤波及其它用途的小电感,都可自制。其作法是用100KΩ以上的1/4或1/8瓦电阻,用φ0.1～0.15mm的漆包线在所选电阻上绕制,绕好后将两头接在电阻引线上,用LCCG-1或QBG-3电感测试仪测出电感量即可。根据实际需要     

小资料

为了使功率管的散热达到最佳状况,常在管子与散热片接触面涂以硅酯。而硅酯可从废3AX81、3AX71玻璃管壳中取得。     

UHF放大器

下图放大器适用于500～1000 MHz UHF 频段。可大大减小图象杂波,尤其适合彩色录象接收使用。图中 R92Ω、C2P 为负反馈电路,展宽了接收     

硅平面管自动初测仪

业已试制成功一种用于硅平面管初测管芯的自动测试仪,如与自动探针相配合则可实现管芯初测自动化,测试速度可达3600只/时。单独使用该仪器也可提高工效2～4倍,同时提     

Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.     

Composition-Dependent Characterization of Sb2Te3 Thin Films Prepared by Ion Beam Sputtering Deposition

The optimization of ion beam sputtering deposition process for Sb2 Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2 Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2 Te3 thin films exhibit the Seebeck coefficient of 190μVk^-1 and the electrical conductivity of 1.1 × 10^3 Scm^-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2 Tea film with a maximum power factor of 2.26×10^-3 Win^-1K^-2 is achieved when annealed at 400℃. Raman measurement shows that the main peaks are at about 120 cm^-1, 252 cm^-1 and 450 cm^-1, in agreement with those of V-VI compound semiconductors.     

基于TCP／IP协议的PDA和主机之间的无线通信

为及时、方便对远程装备的性能进行测试,基于TCP／IP协议,利用C#．NET开发了PDA和主机之间的无线通信软件。该软件已与其它相关软件一起应用于装甲装备的检测线测试系统中,效果良好。文中介绍了PDA和主机间进行无线通信的硬件需求和软件开发过程,其中特别强调了该无线通信的硬件构成、配置步骤、注意事项和用C#．NET开发PDA的一些技术难点。希望能给从事相关研究的同仁一点启发。     

随机双指数记忆耗散系统的非马尔可夫扩散

针对具有双指数耗散记忆核函数的两自由度耦合系统, 本文利用Laplace变换导出了热宽带噪声激励下该系统响应二阶矩的解析表达式. 并观察到位移二阶矩不同于单自由度情形下的反常扩散:<x²(t)> ∝ t^α (0<α<2, α≠1), 而是随时间及噪声等参数变化呈现普遍的振荡扩散现象.分析可得, 阻尼耦合因子B使粒子远离简谐势场的束缚, <x²(t)>随B的增大扩散加剧而摩擦系数增大却使其趋于平稳状态.进一步, 若两热噪声互关联时, 较小的互关联时间对二阶矩的影响较大, 反之作用较小. 伴随互关联强度递增, 位移二阶矩的扩散加剧, 位移间的相关性加强, 与物理直观相符. 关键词： 热噪声 非马尔可夫扩散 广义朗之万方程 关联性     

一个基于内插多项式的广播加密方案

该文提出了一种基于内插多项式的广播加密方案,消息发布者通过管理中心指定多个信息接收者,管理中心生成一个内插多项式,并公布相关的信息,合法用户根据自己的秘密信息和中心公布的消息,通过计算线段的中点来得到内插多项式,达到安全广播加密的目的.     

Crystal Structures and DNA Binding Properties of 2-Naphthoxyacetic Acid Cu(Ⅱ) Complexes

Two new copper complexes based on 2-naphthoxyacetic acid ligand, namely [Cu(L)_2(CH_3CN)]_2(1) and [Cu(L)(1,10-phen)_2](2), where L = 2-naphthoxyacetic acid and 1,10-phen = 1,10-phenanthroline, were obtained by hydrothermal reaction and characterized by single-crystal X-ray diffraction. The binuclear complex 1 and mononuclear complex 2 belong to space group C2/c and P■, respectively. The binding properties of the two compounds with ct-DNA were investigated by UV-Vis and fluorescence spectra. The two compounds could bind with ct-DNA through interactions. Compound 2 displays stronger binding ability in the reaction with ct-DNA.