排序方式: 共有31条查询结果,搜索用时 375 毫秒
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为了研究组合逻辑中单粒子瞬态(Single-Event Transient,SET)的特性,采用片上测量技术提出了一套SET脉冲宽度测量方案.针对SET脉冲特性,设计了一种基于自主触发的脉冲测量电路,提出了一种用于自测试验证的脉冲激励电路.基于本所350nm SOI工艺,完成了一款集脉冲收集、测量、自测试于一体的SET重离子辐射测试芯片.通过仿真分析,验证了该方案的有效性.此方案为其他深亚微米工艺下SET研究提供了参考. 相似文献
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This paper describes the design of a fully integrated low phase noise CMOS phase-locked loop for mixed-signal SoCs with a wide range of operating frequencies. The design proposes a multi-regulator PLL architecture, in which every noise-sensitive block from the PLL top level is biased from a dedicated linear or shunt regulator, reducing the parasitic noise and spur coupling between different PLL building blocks. Supply-induced VCO frequency sensitivity of the PLL is less than 0.07%-fvco/1%-VDD. The design is fabricated in 0.13 μ m 1.5/3.3 V CMOS technology. The in-band phase noise of –102 dBc/Hz at 1 MHz offset with a spur of less than –45 dBc is measured from 1.25 GHz carrier. The measured RMS jitter of the proposed PLL is 1.72 ps at a 1.25 GHz operating frequency. The total power consumption is 19 mW, and its active area is 0.19 mm2. 相似文献
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一种基于电压控制电流源的单片LDO稳压器的设计与实现 总被引:1,自引:1,他引:0
提出了一种单片集成的高电源抑制比LDO稳压器,主要应用于PLL中VCO和电荷泵的电源供给。该稳压器采用电压控制电流源(VCCS)补偿方案,与其他补偿方法相比,VCCS补偿仅需要一个0.18 pF的电容。误差放大器采用折叠共源共栅结构,可以提供高的电源抑制比,并且使得设计的LDO为两级放大器结构,有利于简化补偿网络。文中设计的LDO在低频时电源抑制比(PSR)为-58.7 dB,在1MHz处的电源抑制比为-20 dB。采用0.35 µm CMOS工艺流片,测试结果表明,本文设计的LDO可以为负载提供50 mA的电流。 相似文献
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This paper describes the design of a fully integrated low phase noise CMOS phase-locked loop for mixedsignal SoCs with a wide range of operating frequencies.The design proposes a multi-regulator PLL architecture,in which every noise-sensitive block from the PLL top level is biased from a dedicated linear or shunt regulator,reducing the parasitic noise and spur coupling between different PLL building blocks.Supply-induced VCO frequency sensitivity of the PLL is less than 0.07%-f_(vco)/1%-V_(DD).The design... 相似文献