低位错密度4 inch GaSb(100)单晶生长及高质量衬底制备

采用液封直拉法(LEC)生长了4 inch直径(100)GaSb单晶并进行了衬底晶片的加工制备.通过优化热场,可重复生长出非掺和掺Te 整锭(100)单晶,单晶锭的重量为5~8 kg, 成晶率可达80;以上.4 inch(100)晶片大部分区域的位错腐蚀坑密度小500 cm-2,其(004)双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好.晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性.经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片.通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底.     

N-type GaSb single crystals with high below-band gap transmission

Te-doped GaSb single crystals are studied by measuring Hall effect, infrared(IR) transmission and photoluminescence(PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.     

Thermally induced native defect transform in annealed GaSb

Undoped p-type Ga Sb single crystals were annealed at 550–600?C for 100 h in ambient antimony. The annealed Ga Sb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy(GDMS), infrared(IR)optical transmission and photoluminescence(PL) spectroscopy. Compared with the as-grown Ga Sb single crystal, the annealed Ga Sb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the Ga Sb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.     

GaSb和InAs单晶衬底的晶格完整性

通过X线衍射分析和位错腐蚀,发现在GaSb(100)晶片的中心区域容易形成呈枝蔓状分布的高密度位错聚集区,这些位错引起严重的晶格畸变.通过分析晶体生长条件,证明生长过程中产生的大的温度过冷造成了晶体中心区域的枝蔓生长,产生大量位错.富As条件下生长的InAs单晶中产生大量与As过量有关的晶格缺陷,明显降低了晶体的完整性.     

半绝缘InP的铁掺杂激活与电学补偿

比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的"踢出-替位"机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好.     

掺Sb的ZnO单晶的缺陷和性质研究

采用化学气相传输法生长了掺Sb的ZnO体单晶,生长温度为950℃.与非掺ZnO单品相比,掺Sb后ZnO单晶仍为n型,其自由电子浓度明显升高.x射线光电子能谱(XPS)测量结果表明.掺人的Sb在ZnO单晶中可能占据了Zn位,或处于间隙化置,形成了施主.利用光致发光谱(PL)测量发现掺Sb后ZnO单晶发出蓝光,该蓝色荧光与浅施主有关.这些结果表明在高温生长条件下,掺Sb后ZnO单晶中产生了高浓度的施主缺陷,因而难以获得P型材料.     

ZnO单晶的缺陷及其对材料性质的影响

利用X射线衍射技术、荧光光谱、霍尔效应和光学显微等方法分别研究了ZnO单晶的晶格完整性、深能级缺陷、电学性质、位错和生长极性.通过比较ZnO单晶材料在退火前后的测试结果,分析了材料的缺陷属性和缺陷对材料性质、晶体完整性的影响.     

离子注入AlN 单晶的荧光谱分析

High concentrations of Si and Zn were implanted into （0001） AlN bulk crystal grown by the self-seeded physical vapor transport （PVT） method. Cathode luminescence （CL） and photoluminescence （PL） spectroscopy were used to investigate the defects and properties of the implanted AlN. PL spectra of the implanted AlN are dominated by a broad near-band luminescence peak between 200 and 254 nm. After high temperature annealing, implantation induced lattice damages are recovered and the PL intensity increases significantly, suggesting that the implanted impurity Si and Zn occupy lattice site of Al. CL results imply that a 457 nm peak is Al vacancy related. Resistance of the AlN samples is still very high after annealing, indicating a low electrical activation efficiency of the impurity in AlN single crystal.     

磷扩散氧化锌单晶的性质

分别在550和800℃对CVT方法生长的非掺ZnO单晶进行闭管磷扩散. 通过Hall测试、X射线光电子谱（XPS) 、光致发光（PL）以及喇曼散射对扩散后的样品进行测试分析. 发现扩散掺杂后的ZnO单晶仍显示n型导电性,自由电子浓度比非掺样品增高,在800℃扩散后尤为明显. PL测试结果表明,掺杂样品在420~550nm范围的可见光发射与缺陷有关. XPS测试表明:在550℃掺杂,P原子更易代替Zn位;在800℃扩散时,P未占据Zn位,而似乎占据了O位. 最终在磷扩散后的ZnO单晶中形成了高浓度的浅施主缺陷,造成了自由电子的显著增加.     

深能级缺陷对半绝缘InP材料电学补偿的影响

对铁掺杂和高温退火非掺杂磷化铟制备的两种半绝缘材料的电学补偿和深能级缺陷进行了分析和比较.根据热激电流谱(TSC)测得的深能级缺陷结果，分析了这两种半绝缘InP材料中深能级缺陷对电学补偿的影响.在掺铁半绝缘InP材料中，由于存在高浓度的深能级缺陷参与电学补偿，降低了材料的补偿度和电学性能.相比之下，利用磷化铁气氛下高温退火非掺InP获得的半绝缘材料的深能级缺陷浓度很低，通过扩散掺入晶格的铁成为唯一的深受主补偿中心钉扎费米能级，材料表现出优异的电学性质.在此基础上给出了一个更为广泛的半绝缘InP材料的电学补偿模型.