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针对航天器热控涂层性能退化预测问题,提出了自适应模拟退火回火算法和自适应综合遗传算法。利用美国Tenflon型涂层材料短时间地面模拟实验数据对上述两种算法进行了模型参数求解。并将所得预测曲线与美国9年时间跨度的Teflon型涂层材料地面模拟实验数据进行比较,比较结果表明了模拟退火回火算法以及自适应综合遗传算法对解决航天器热控涂层性能退化预测问题是可行的和有效的。 相似文献
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针对航天器热控涂层性能退化预测问题,提出了自适应模拟退火回火算法和自适应综合遗传算法.利用美国Teflon型涂层材料短时间地面模拟实验数据对上述两种算法进行了模型参数求解.并将所得预测曲线与美国9年时间跨度的Teflon型涂层材料地面模拟实验数据进行比较,比较结果表明了模拟退火回火算法以及自适应综合遗传算法对解决航天器... 相似文献
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In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano-metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 μm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source. 相似文献
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实验中使用在蓝宝石衬底上用低压金属有机化学气相沉积(MOCVD)生长的AlGaN基p-i-n结构材料,通过对工艺流程的优化设计,制作了背照射p-i-n型AlGaN日盲紫外探测器,获得了较高的外量子效率。材料中p区和i区的Al组分为40%,n区Al组分为65%。探测器为直径500 m的圆形,光谱响应起止波长为260~310 nm,峰值响应波长283 nm。零偏压下,暗电流密度为2.710-10 Acm-2,对应的R0A参数为3.8108 cm2,峰值响应率为13 mA/W,对应的峰值探测率为1.971012 cmHz1/2W-1。其在-7 V偏压下,峰值响应率达到148 mA/W,对应的外量子效率达到63%。 相似文献
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Abstract: Back-illuminated AlxGal-xN-based dual-band solar-blind ultraviolet (UV) photodetectors (PDs) are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD). The two p-i-n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of ~10.8 mA/W at 242 nm and ~5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 μm and 800 μm, exhibit almost the same leakage current of ~1.3× 10-9 A at a reverse bias of 10 V. Therefore, dark current densities of the two junctions are close to 6.6 × 10-7 A/cm2 and 2.6 × 10-7 A/cm2 at -10 V respectively. 相似文献
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本文把MgF2引入有机电致发光器件的电子传输层和穴传传输层之间,制备了有机-无机复合的电致发光器件。通过发光和电学研究发现,MgF2层的引入可以明显抑制激基复合物的形成,增加短波长光的发射的强度;同时,它对降低起亮电压,改善器件发光性能具有明显的效果。 相似文献
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报道了新研制出的160×128元GaAs/AlGaAs多量子阱长波红外焦平面器件。使用MBE的方法在半绝缘的GaAs衬底上生长器件结构;开发了用普通光刻技术和离子束刻蚀法制备2D光栅技术,以及探测器芯片与读出电路互联技术。在77 K时测试,器件的平均峰值探测率Dλ*=1.28×1010 cmW-1Hz1/2,峰值波长为λp=8.1 μm,截止波长为λc=8.47 μm。器件的非盲元率≥98.8%,不均匀性10%。 相似文献
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